Miniaturized potassium ion sensor

• US 4,508,613 A
• Filed: 12/19/1983
• Issued: 04/02/1985
• Est. Priority Date: 12/19/1983
• Status: Expired due to Fees

• Current Assignee: Spectramed, Inc.
• Original Assignee: Gould, Inc. (Transdigm Group Incorporated)
• Inventors: Loeppert, Peter V., Busta, Heinz H., Tsao, Kuey-Yeou, White, Wayne D.
• Primary Examiner(s): Kaplan, G. L.
• Application Number:
  US06/562,642
• Time in Patent Office: 470 Days
• Field of Search: 357/25, 324/71.5, 128/635, 204/416, 204/403, 204/418, 204/419, 204/420
• US Class Current: 204/418
• CPC Class Codes: G01N 27/414 Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Abstract

A chemically sensitive device for monitoring chemical properties is described. The device includes a depletion-mode field-effect transistor. Two electrical leads are connected between source and drain region of the field-effect transistor to monitor changes in current or potential resulting from changes in the amount of chemical to be monitored. A reference electrode is attached to a lower substrate surface of the field-effect transistor and electrically connected to the source via a highly doped region adjacent to the source and another highly doped region adjacent to the reference electrode, both having a polarity identical to the substrate. A sensing membrane which is specific to the chemical to be monitored is located on a portion of the substrate remote from the gate region but electrically connected to the gate region to alter conductance between the source and the drain in accordance with the presence or absence of the chemical to be monitored. Thus, the source, gate, drain regions may be completely encapsulated to prevent contamination of the FET by the chemical to be monitored.

Claims

1. A chemically sensitive device for monitoring chemical properties, comprising:

a semiconductor substrate formed from material being slightly doped toward a first polarity;

a depletion-mode field-effect transistor on said substrate, said field-effect transistor having source and drain regions oppositely doped with respect to said substrate with a lightly doped gate region thereinbetween also oppositely doped with respect to said substrate;

a first highly doped region on said substrate of the same polarity of said substrate in electrical contact with said source of said field-effect transistor;

a reference electrode having a reference membrane on said substrate, said reference electrode providing a first potential to said source through said first highly doped region;

a chemically sensitive electrode having a chemically sensitive membrane on said substrate, said chemically sensitive membrane having an increased sensitivity to said chemical property to be monitored relative to said reference membrane, said chemically sensitive electrode being electrically connected to said gate to provide a chemically dependent potential to said gate; and

means for monitoring the current between said source and said drain.

2. A chemically sensitive device for monitoring chemical properties as recited in claim 1, wherein said reference membrane is located on a side of said substrate different from a side of said substrate on which said source and drain regions are located.

3. A chemically sensitive device for monitoring chemical properties as recited in claim 1, wherein said chemically sensitive membrane is located on said substrate at a location geometrically remote but electrically connected to said gate.

4. A device as recited in claim 1, wherein said means for monitoring said current between said source and drain includes first and second electrical leads on said source and drain respectively to measure a current which is functionally related to the chemical property to be monitored.

5. A chemically sensitive device for monitoring chemical properties as recited in claim 1, further comprising:

a thin-film layer of aluminum between said first highly doped region and said source to provide electrical connection between said first highly doped region and said source.

6. A chemically sensitive device for monitoring chemical properties, comprising:

an impedance transformer including a depletion-mode field-effect transistor having a substrate, and source, drain, and gate regions on said substrate;

reference electrode means for monitoring a general chemical composition, said reference electrode being supported by such substrate remote from, but internally electrically connected through said substrate to, said source;

chemical sensing means for sensing a particular chemical to be monitored, said chemical sensing means being supported by said substrate remote from, but electrically connected to, said gate; and

detection means for producing an output signal indicating the difference between the electrical potentials of said reference electrode means and said chemical sensing means, said detection means including a first electrical lead connected to said source and said second electrical lead connected to said drain.

7. A chemically sensitive device as recited in claim 6, wherein said substrate is lightly doped to have a first polarity and said source and drain are lightly doped to have a second polarity opposite said first polarity, and said impedance transformer further includes a first highly doped region near said source said first highly doped region having said first polarity, said highly doped region providing for an electrical connection between said reference electrode means and said substrate near said source.

8. A chemically sensitive device as recited in claim 7, wherein said impedance transformer includes a thin film of electrically conductive material between said first highly doped region and said source.