Semiconductive glass fibers and method

• US 4,510,077 A
• Filed: 11/03/1983
• Issued: 04/09/1985
• Est. Priority Date: 11/03/1983
• Status: Expired due to Fees

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Elton, Richard K.
• Primary Examiner(s): Kight, John
• Assistant Examiner(s): Nutter, Nathan M.
• Application Number:
  US06/548,338
• Time in Patent Office: 523 Days
• Field of Search: 252/502, 252/510, 252/511, 252/518, 524/27, 524/35, 524/47, 524/62, 524/79, 524/494, 106/162, 106/163 R, 106/171, 106/191, 106/199, 106/210, 106/213, 427/82, 427/86, 427/87
• US Class Current: 252/502
• CPC Class Codes: H01B 1/04 mainly consisting of carbon-silicon compounds, carbon or silicon
• CPC Class Codes: Y10S 174/29 having a semiconductive layer

Abstract

A semiconductive material which is formed by impregnating glass fibers or glass fabric with an organic material which is pyrolyzed in the substantial absence of oxygen and at a temperature which is above the pyrolysis temperature of the organic material, but below the boiling point or sublimation temperature of the organic material. By such pyrolysis, the organic compound is converted to substantially pure carbon deposited on the glass fibers which impart to the glass fibers semiconductive characteristics.

Claims

1. A semiconductive material comprising glass fibers which are pyrolyzed in the substantial absence of oxygen in the presence of an effective amount of an organic compound to render said glass fibers semiconducting by forming carbon deposited glass fibers.

2. The semiconductive material of claim 1 wherein the glass fibers are silicate glass fibers which are woven into glass cloth.

3. The semiconductive material of claim 1 wherein the glass fibers are magnesium aluminosilicate glass fibers which are woven into glass cloth.

4. The semiconductive material of claim 2 wherein there is present from 0.5 to 30% by weight of the organic compound based on the weight of the glass cloth.

5. The semiconductive material of claim 4 wherein there is present from 2-4% by weight of the organic compound based on the weight of the glass cloth.

6. The semiconductive material of claim 4 wherein the organic compound is a compound selected from the class consisting of compounds in which a majority of the atoms are hydrogen, carbon and oxygen atoms;

compounds in which a majority of the atoms are carbon and hydrogen atoms; and

mixtures of said compounds.

7. The semiconductive material of claim 6 wherein the organic compound is a mixture of starch and an oil.

8. The semiconductive material of claim 6 wherein the organic compound is selected from compounds which pyrolyze at a temperature of 600°

C. or above but which do not have a boiling or sublimition temperature that is below their pyrolyzation temperature, or which do not degrade to produce significant amounts of volatile decomposition products.

9. The semiconductive material of claim 8 wherein the organic compound is selected from the class consisting of starch, vegetable oils, marine oils and mixtures thereof.

10. The semiconductive material of claim 9 wherein there is further present a dispersant which is selected from the class consisting of water, hydrocarbon solvents, aromatic solvents, ketone solvents and alcohol solvents.

11. The semiconductive material of claim 10 which has a surface resistivity in the range of 200 to 10,000,000 ohms per square.

12. A process for producing a semiconductive material, comprising:

(a) depositing an effective amount of an organic compound on glass fibers;

(b) pyrolyzing the glass fibers and organic compound deposited thereon at a temperature of at least 600°

C. in the substantial absence of oxygen to form carbon deposited glass fibers.

13. The process of claim 12 wherein the glass fibers and organic compound are pyrolyzed at a temperature in the range of 650°

-850°

C.

14. The process of claim 13 wherein the organic compound is pyrolyzed for a period of time in the range of 1 minute to 4 hours.

15. The process of claim 14 wherein the organic compound is deposited on said glass fibers by spraying.

16. The process of claim 15 wherein the organic compound is pyrolyzed in an atmosphere of an inert gas.

17. The process of claim 16 wherein the organic compound is pyrolyzed under atmospheric pressure.

18. The process of claim 12 wherein the glass fibers are silicate glass fibers which are woven into glass cloth.

19. The process of claim 12 wherein the glass fibers are magnesium aluminosilicate glass which are woven into glass cloth.

20. The process of claim 18 wherein there is present from 0.5 to 30% by weight of the organic compound based on the weight of the glass cloth.

21. The process of claim 20 wherein there is present from 2-4% by weight of the organic compound based on the weight of the glass cloth.

22. The process of claim 21 wherein the organic compound is a compound selected from the class consisting of compounds in which a majority of the atoms are carbon, hydrogen and oxygen atoms, compounds in which a majority of the atoms are carbon and hydrogen atoms;

and mixtures of such compounds.

23. The process of claim 22 wherein the organic compound is selected from compounds which pyrolyze at a temperature of 600°

C. or above but which do not have a boiling or sublimation temperature that is below their pyrolyzation temperature, or which do not degrade to produce significant amounts of volatile decomposition products.

24. The process of claim 12 wherein the organic compound is selected from the class consisting of starch, vegetable oils, mineral oils, and mixtures thereof.

25. The process of claim 24 wherein the organic compound is a mixture of the foregoing organic compound and a dispersant.

26. The process of claim 25 wherein the dispersant is selected from the class consisting of water, hydrocarbon solvents, aromatic solvents, ketone solvents and alcohol solvents.

27. The process of claim 26 wherein the semiconductive material has a resistivity in the range of 200 to 10,000,000 ohms per square.