Memory system

• US 4,513,374 A
• Filed: 11/25/1983
• Issued: 04/23/1985
• Est. Priority Date: 09/25/1981
• Status: Expired due to Term

• Current Assignee: Lockheed Martin Corporation (Martin Marietta Corporation)
• Original Assignee: LTV Aerospace and Defense Company
• Inventors: Hooks, John T. Jr.
• Primary Examiner(s): Heckler, Thomas M.
• Application Number:
  US06/555,331
• Time in Patent Office: 515 Days
• Field of Search: 364/200 MS File, 364/900 MS File, 365/130
• US Class Current: 365/230.04
• CPC Class Codes: G06T 15/10 Geometric effects
• CPC Class Codes: H04N 9/79 Processing of colour television signals in connection with recording

Abstract

A relatively high speed memory system is provided utilizing relatively low speed electronic memory devices such as NOS integrated circuits. The memory system is organized as a planar array with rows and columns of word positions and includes an address generator for generating sequences of N address bits to access sequences of N words of data where N is greater than 1 along any selected substantially straight path in any direction along the memory array with each address generating having a set of most significant bits and a set of least significant bits. Each electronic memory device includes an address decoder which is responsive to a first plurality of address bits for selecting a memory element within the memory device and an enable circuit for enabling the memory device. The logic circuit coupling the address generator to the electronic memory devices selectively enables at least one memory device during each memory access and no one memory device is selected more than once per N memory access. In one embodiment the logic means selectively couples the least significant bits from the address generator to enable the selected memory devices the most significant bits being selectively coupled to the address decoders of the memory devices for selecting a memory element within each enabled memory device.

Claims

1. A relatively high speed memory system comprised of relatively slow speed electronic memory means, said memory system organized as a planar array of rows and columns of word positions and comprising:

(a) address generator means for generating sequences of N addresses to access sequences of N words of data along selected substantially straight paths in any direction across said memory array with each address generated having a set of most significant bits and a set of least significant bits;

(b) a plurality of electronic memory means, each of said memory means having address decoder means responsive to a plurality of address bits for selecting a memory element within said memory means and enable means responsive to an enable signal for enabling said memory means; and

(c) logic means coupling said address generator means to said electronic memory means, said set of least significant bits being selectively coupled to the enable means of said memory means for selectively enabling at least one of said memory means and said most significant bits being selectively coupled to said address decoder means for addressing a selected memory element within said enabled memory means;

wherein

(d) N is greater than one and wherein no memory means is selected more than once per sequence of N memory accesses.

2. The memory system of claim 1 wherein each memory element stores a single bit and wherein said selector means selectively simultaneously enables m of said memory means during each memory access to thereby access m-bits which form an m-bit word.

3. The memory system of claim 1 wherein said memory means are integrated circuit random access memory chips.

4. The memory system of claim 3 wherein said enable means is the chip select means of said integrated circuit random access memory chip.

5. The memory system according to claim 4 wherein said memory chips are 1 by n-bit.

6. The memory system according to claim 5 wherein said memory chips are 16K memory chips.

7. The memory system of claim 1 wherein each memory element stores an m-bit word.

8. The memory system of claim 1 wherein said memory system is operable at approximately N times the maximum operating time of said individual electronic memory means.

9. A relatively high speed memory system comprised of relatively slow speed electronic memory means, said memory system organized as a planar array of rows and columns of word positions and comprising:

(a) address generator means for generating sequences of N addresses to access sequencies of N words of data along any selected substantially straight paths in any direction across said memory array with each address generated having a set of most significant bits and a set of least significant bits;

(b) a plurality of electronic memory means, each of said memory means having address decoder means responsive to a plurality of address bits for selecting a memory element within said memory means and enable means responsive to an enable signal for enabling said memory means; and

(c) logic means coupling said address generator means to said electronic memory means, said logic means including;

(i) first means responsible to each address generated by said address generator means for selectively enabling at least one of said memory means during each memory access with N being greater than one and no memory means being selected more than once per sequence of N memory accesses; and

(ii) second means responsive to each address generated by said address generator means for addressing a selected memory element within said enabled memory means.

10. The memory system of claim 9 wherein each memory element stores a single bit and wherein said selector means selectively simultaneously enables m of said memory means during each memory access to thereby access m-bits which form an m-bit word.

11. The memory system according to claim 9 wherein said set of least significant bits is coupled to said first means for generating said enable signal and said most significant bits are coupled to said second means for addressing said least significant bits of said enabled memory means.

12. The memory system of claim 9 wherein said memory means are integrated circuit random access memory chips.

13. The memory system of claim 12 wherein said enable means is the chip select means of said integrated circuit random access memory chip.

14. The memory system according to claim 13 wherein said memory chips are 1 by n-bit.

15. The memory system according to claim 14 wherein said memory chips are 16K memory chips.

16. The memory system of claim 9 wherein each memory element stores an m-bit word.

17. The memory system according to claim 9 wherein said system is operable at a speed approximately N times the maximum operating speed of said memory means.

18. A relatively high speed memory system comprised of relatively slow speed electronic memory means, said memory system organized as a planar array of rows and columns of memory modules with each memory module organized as a planar array of rows and columns of word positions and comprising:

(a) address generator means for generating sequences of N addresses to access sequences of N words of data along selected substantially straight paths in any direction across said arrays with each address generated having a set of most significant bits and a set of least significant bits;

(b) a plurality of electronic memory means, each of said memory means having address decoder means responsive to a plurality of address bits for selecting a memory element within said memory means and enable means responsive to an enable signal for enabling said memory means; and

(c) logic means coupling said address generator means to said electronic memory means, said set of least significant bits being selectively coupled to the enable means of said memory means for selectively enabling one of said memory means and said most significant bits being selectively coupled to said address decoder means for addressing a selected memory element within said enabled memory means;

wherein

(d) each of the memory elements of any given memory means is assigned to a row and column position in a different respective memory module, and wherein N is greater than one and wherein no memory means is selected more than once per sequence of N memory accesses.

19. The memory system of claim 18 wherein each memory element stores a single bit and wherein m planes of said planar arrays of memory modules, are provided, said logic means selectively simultaneously enabling one of said memory means on each of said m planes during each memory access to thereby simultaneously access m bits which form an m-bit word.

20. The memory system according to claim 18 wherein said memory means are 1 by n-bit integrated circuit random access memory chips.

21. The memory system according to claim 20 wherein said memory chips are 16K bit memory chips.

22. The memory system according to claim 20 wherein said memory system is organized as a planar array of P rows and R columns of memory modules where P and R are integers greater than one and the product of P and R is equal to n.

23. The memory system according to claim 22 wherein said memory modules are organized as planar arrays of p rows and r columns of word positions where p and r are integers greater than one and the product of p and r is equal to the number of memory means comprising a plane of planar modules of the memory system.

24. The memory system according to claim 23 wherein p and r are each equal to N.