Control circuitry for high voltage solid-state switches

• US 4,516,037 A
• Filed: 06/09/1980
• Issued: 05/07/1985
• Est. Priority Date: 12/20/1978
• Status: Expired due to Term

• Current Assignee: AT&T, Inc.
• Original Assignee: AT&T, Inc.
• Inventors: Shackle, Peter W.
• Primary Examiner(s): CLAWSON JR, JOSEPH
• Application Number:
  US06/158,054
• Time in Patent Office: 1,793 Days
• Field of Search: 307/311, 307/315, 307/305, 307/252 A, 357/22, 357/38
• US Class Current: 327/474
• CPC Class Codes: H03K 17/567 Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Abstract

A gated diode switch (GDS1, GDS3, GDS4, GDS10) requires a voltage applied to the gate which is more positive than that of the anode and cathode in order to break current flow between the anode and cathode. In addition, a current of at least the same order of magnitude as flows between anode and cathode must flow into the gate of the switch to break current flow. The use of a second gated diode switch (GDS2, GDS20) coupled by the cathode (28, 280) to the gate of a gated diode switch (GDS1, GDS3, GDS4, GDS10) which is to be controlled provides a high voltage and current capability means for cutting off (interrupting) or inhibiting current flow through the gated diode switch (GDS1, GDS3, GDS4, GDS10). The state of a gated diode switch (GDS1, GDS3, GDS4, GDS10) is thus controlled by a second gated diode switch (GDS2, GDS20). The state of the second gated diode switch (GDS2, GDS20) is controlled by a circuitry (A, A0) consisting of an n-p-n transistor (Q1, Q10), at least one p-n-p transistor (Q2, Q20), and at least one diode (D2, D20, D3, D4).

Claims

1. Circuitry coupled to the gate of a first gated diode switch (GDS1, GDS3, GDS4, GDS10) which has a gate, an anode, and a cathode, comprising a second gated diode switch (GDS2, GDS20) which has a gate, an anode, and a cathode, the cathode of the second gated diode switch (GDS2, GDS20) being coupled to the gate of the first gated diode switch (GDS1, GDS3, GDS4, GDS10), a control circuit branch (A, A0) is coupled to the second gated diode switch (GDS2, GDS20) for controlling conduction between the anode and cathode thereof, and

being characterized in that:

the control circuit branch (A, A0) comprises;

a third switch branch (Q1, Q10) having a control terminal which is coupled to an input terminal (16,

     160), and having first (12,

     120) and second (14,

     140) output terminals;

a fourth switch branch (Q2 and Q20, Q3, Q4) having a control terminal (18,

     180) coupled to the first output terminal (12,

     120) of the third switch branch and having first (26,

     260) and second (20,

     200) output terminals with the first output terminal (26,

     260) being coupled to the anode of the second gated diode switch (GDS2, GDS20); and

a level shifting branch (D2, and D20, D3, D4) having a first terminal coupled to the second output terminal (20,

     200) of the fourth switch circuit means (Q2 and Q20, Q3, Q4), and having a second terminal (24,

     240) coupled to the gate of the second gated diode switch (GDS2, GDS20).

2. The circuitry of claim 1 characterized in that the third switch branch (Q1, Q10) is an n-p-n transistor, the fourth switch branch (Q2) is a p-n-p transistor, and the level shifting branch (D1) is a p-n diode.

3. The circuitry of claim 2 characterized in that:

the third switch branch (Q10) is a first n-p-n transistor (Q10) and the fourth switch branch (Q20, Q3, Q4) is the combination of a p-n-p transistor (Q20), a second n-p-n transistor (Q3), and a third n-p-n transistor (Q4);

the collector of the first n-p-n transistor (Q10) is coupled to the base of the p-n-p transistor (Q20);

the collector of the p-n-p transistor (Q20) is coupled to the base of the second n-p-n transistor (Q3);

the emitter of the second n-p-n transistor (Q3) is coupled to the base of the third n-p-n transistor (Q4);

the emitter of the third n-p-n transistor (Q4) is coupled to the anode of the second gated diode switch (GDS20); and

the level shifting branch (D20, D3, D4) comprises first (D20), second (D3), and third (D4) p-n diodes which are serially connected together with the cathode of the first coupled to the anode of the second and the cathode of the second coupled to the anode of the third.