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Plasma enhanced diffusion process

  • US 4,521,441 A
  • Filed: 12/19/1983
  • Issued: 06/04/1985
  • Est. Priority Date: 12/19/1983
  • Status: Expired due to Fees
First Claim
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1. A process for doping a semiconductor substrate which comprises the steps of:

  • applying spin-on dopant material to said substrate;

    heating said material to a first temperature;

    plasma treating said material to enhance the conductivity of diffused regions formed therefrom; and

    heating said substrate to a second temperature higher than said first temperature.

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