Plasma enhanced diffusion process
First Claim
Patent Images
1. A process for doping a semiconductor substrate which comprises the steps of:
- applying spin-on dopant material to said substrate;
heating said material to a first temperature;
plasma treating said material to enhance the conductivity of diffused regions formed therefrom; and
heating said substrate to a second temperature higher than said first temperature.
1 Assignment
0 Petitions
Accused Products
Abstract
A process is disclosed for doping a semiconductor substrate which achieves a lower sheet resistivity than is otherwise obtainable. A spin-on dopant material is applied to the surface of the semiconductor substrate and subsequently heated to drive off solvents contained in the dopant material. The layer of spin-on dopant material is then plasma treated, preferably in an oxygen plasma, to enhance the diffusion properties of the spin-on material. The substrate and dopant material are then heated to an elevated temperature to accomplish the desired depth of diffusion.
87 Citations
15 Claims
-
1. A process for doping a semiconductor substrate which comprises the steps of:
- applying spin-on dopant material to said substrate;
heating said material to a first temperature;
plasma treating said material to enhance the conductivity of diffused regions formed therefrom; and
heating said substrate to a second temperature higher than said first temperature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
- applying spin-on dopant material to said substrate;
-
13. A process for doping a semiconductor substrate which comprises the steps of:
- providing a patterned masking layer on said substrate;
applying a layer of spin-on dopant material overlying said masking layer and said substrate;
heating said dopant material to a temperature of about 150°
C.-400°
C.;
exposing said dopant material to an oxygen plasma; and
heating said dopant material to a temperature of 850°
-1200°
C. to diffuse said dopant into said substrate. - View Dependent Claims (14)
- providing a patterned masking layer on said substrate;
-
15. A process for doping a semiconductor substrate which comprises the steps of:
- forming a patterned diffusion mask on the surface of said substrate, said mask having apertures therein to expose selected portions of said substrate;
forming a layer of spin-on dopant material overlying said mask and extending into said apertures to contact said selected portions of said substate;
heating said layer to about 150°
-400°
C.;
exposing said layer to a plasma comprising oxygen; and
heating said layer to a temperature of about 850°
-1200°
C.
- forming a patterned diffusion mask on the surface of said substrate, said mask having apertures therein to expose selected portions of said substrate;
Specification