Highly conductive photoelectrochemical electrodes and uses thereof
First Claim
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1. A photoelectrode comprising a conductive coating material having a band gap in the range from greater than about 0.5 to about 2.35 e.V. on a substrate containing a semiconductor material, said photoelectrode further comprising a layer of material having a bandgap greater than about 3.0 e.V. between said substrate and said coating material, and said layer having an average thickness less than about 100 angstroms.
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Abstract
A photoelectrode, containing a highly conductive coating material having a band gap greater than 0 to about 3.0 e.V. on a substrate containing a semiconductor material, is utilized in photovoltaic cells, photoelectrosynthesis and photoelectrocatalysis.
120 Citations
63 Claims
- 1. A photoelectrode comprising a conductive coating material having a band gap in the range from greater than about 0.5 to about 2.35 e.V. on a substrate containing a semiconductor material, said photoelectrode further comprising a layer of material having a bandgap greater than about 3.0 e.V. between said substrate and said coating material, and said layer having an average thickness less than about 100 angstroms.
- 17. A photoelectrode comprising a coating material selected from the group consisting of Tl2 O3, CdO, PbO2, Cr2 O3, RuS2, PtCoO2, PdCoO2, PdRhO2, and PdCrO2, on a substrate containing a semiconductor.
- 24. A photoelectrode comprising a coating material containing thallium (III) oxide on a substrate containing a semiconductor.
- 33. A photoelectrode prepared by the method comprising the step of electrochemical deposition of a conductive coating material having a band gap in the range from greater than 0.5 to about 2.35 e.V. on a substrate containing semiconductor material, said photoelectrode further comprising a layer of material having a bandgap greater than about 3.0 e.V. between said substrate and said coating material, and said layer having an average thickness less than about 100 angstroms.
- 37. A photoelectrochemical process employing a photoelectrode comprising a conductive coating material having a band gap in the range from greater than 0.5 to about 2.5 e.V. on a substrate containing a semiconductor material, said photoelectrode further comprising a layer of material having a bandgap greater than about 3.0 e.V. between said substrate and said coating material, and said layer having an average thickness less than about 100 angstroms.
- 44. A photoelectrochemical process employing a photoelectrode comprising a coating material containing thallium (III) oxide on a substrate containing a semiconductor.
- 51. A photoelectrochemical cell employing a photoelectrode comprising a conductive coating material selected from the group consisting of Tl2 O3, CdO, PbO2, Cr2 O3, RuS2, PtCoO2, PdCoO2, PdRhO2, and PdCrO2, on a substrate containing a semiconductor material.
- 57. A photoelectrochemical cell employing a photoelectrode comprising a coating material containing thallium (III) oxide on a substrate containing a semiconductor.
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