Electromechanical transducer strain sensor arrangement and construction

• US 4,522,072 A
• Filed: 04/22/1983
• Issued: 06/11/1985
• Est. Priority Date: 04/22/1983
• Status: Expired due to Term

• Current Assignee: Citicorp Credit Services Incorporated (Citigroup Incorporated), David V. Kerns Jr
• Original Assignee: Insouth Microsystems, Inc.
• Inventors: Davidson, Jimmy L., Sulouff, Robert E., Kerns, David V. Jr., Warren, Keith O., Cook, Koy B., Hartin, Sam S.
• Primary Examiner(s): Ciarlante, Anthony V.
• Application Number:
  US06/487,731
• Time in Patent Office: 781 Days
• Field of Search: 73/765, 73/766, 73/862.63, 73/517 R, 73/518
• US Class Current: 73/765
• CPC Class Codes: G01L 1/2293 of the semi-conductor type semi-conductor devices controllable by variations of applied mechanical force H01L29/84
• CPC Class Codes: G01P 1/006 used for thermal compensation
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/123 by piezo-resistive elements, e.g. semiconductor strain gauges
• CPC Class Codes: G01P 15/124 by semiconductor devices comprising at least one PN junction, e.g. transistors
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends

Abstract

A miniature, solid state, cantilever beam accelerometer is constructed with an arrangement of strain sensing elements which provides for simpler temperature compensation, dual-axis acceleration measurement, and the capability of correcting for nonlinearity in a strain sensing element. Temperature compensation is facilitated by locating two strain sensing elements on the cantilever beam and two on the main body of the accelerometer and connecting the four elements in a Wheatstone bridge. Instead of a single bridge, two half bridges may be formed to allow for independent adjustment of each side of the Wheatstone bridge. Independent adjustment is also possible by using two full bridges with all strain sensing elements oriented in the same direction. If the elements of one bridge are oriented in an orthogonal direction, the accelerometer is capable of measuring both on-axis and off-axis accelerations. The strain sensing elements may be FET'"'"'s or resistors and may be deposited upon, or formed integrally with, the accelerometer.

Claims

1. In an electromechanical transducer having a main body and flexing means attached to said main body for flexing in response to an external stimulus applied to said transducer, strain sensing means responsive to flexion of said flexing means for providing an output signal representative of the external stimulus, said strain sensing means comprising:

a first piezoresistive voltage divider connected across a first source of electrical power, said first piezoresistive voltage divider comprising in series a piezoresistive strain sensing element coupled to said flexing means, an output terminal, and a piezoresistive strain sensing element coupled to said main body, said first piezoresistive voltage divider providing across said piezoresistive strain sensing element coupled to said main body a voltage representing non-strain effects in said main body;

a second piezoresistive voltage divider connected across a second source of electrical power, said second piezoresistive voltage divider comprising in series a piezoresistive strain sensing element coupled to said main body, an output terminal, and a piezoresistive strain sensing element coupled to said flexing means, said second piezoresistive voltage divider providing across said piezoresistive strain sensing element coupled to said flexing means a voltage representing strain in said flexing means; and

output means coupled to said output terminals for providing, as the output signal, the voltage between said terminals.

2. The strain sensing means of claim 1 wherein said piezoresistive strain sensing elements comprise resistors.

3. The strain sensing means of claim 1 wherein said piezoresistive strain sensing elements comprise transistors.

4. The strain sensing means of claim 3 wherein said transistors comprise insulated gate field effect transistors.

5. The strain sensing means of claim 1 wherein said piezoresistive strain sensing elements are intimately attached to said main body and said flexing means.

6. The strain sensing means of claim 5 wherein said main body and said flexing means comprise semiconductor material and said piezoresistive strain sensing elements are formed by vapor deposition on said semiconductor material.

7. The strain sensing means of claim 1 wherein said main body and said flexing means comprise semiconductor material and said piezoresistive strain sensing elements are formed integrally with said semiconductor material.

8. The strain sensing means of claim 7 wherein said piezoresistive strain sensing elements are formed in said main body and said flexing means by diffusion.

9. The strain sensing means of claim 1 wherein said flexing means has a direction of maximum strain, said piezoresistive strain sensing elements coupled to said flexing means sensing strain in substantially said direction of maximum strain.

10. In an electromechanical transducer having a main body and flexing means attached to said main body for flexing in response to an external stimulus applied to said transducer, said flexing means having a direction of maximum strain corresponding to a principal axis of the external stimulus, strain sensing means responsive to flexion of said flexing means for providing a first output signal representative of a component of the external stimulus in a direction substantially parallel to the principal axis and a second output signal representative of a component of the external stimulus in a direction other than substantially parallel to the principal axis, and strain sensing means comprising:

a first input port to be connected to a first source of electrical power;

a first output port to deliver the first output signal;

a first piezoresistive full bridge electrically connecting said first input port and said first output port and having two pairs of opposing arms, said first piezoresistive full bridge comprising two piezoresistive strain sensing elements coupled to said flexing means and forming one of said pairs of opposing arms to sense strain in said flexing means substantially in the direction of maximum strain and two piezoresistive strain sensing elements coupled to said main body and forming the other of said pairs of opposing arms to sense non-strain effects in a said main body substantially in the direction to maximum strain;

a second input port to be connected to a second source of electrical power;

a second output port to deliver the second output signal; and

a second piezoresistive full bridge electrically connecting said second input port and said second output port and having two pairs of opposing arms, said second piezoresistive full bridge comprising two piezoresistive strain sensing elements coupled to said flexing means and forming one of said pairs of opposing arms to sense strain in said flexing means in a direction other than the direction of maximum strain and two piezoresistive strain sensing elements coupled to said main body and forming the other of said pairs of opposing arms to sense non-strain effects in said main body substantially in the direction other than the direction of maximum strain.

11. The strain sensing means of claim 10 wherein said piezoresistive strain sensing elements comprise resistors.

12. The strain sensing means of claim 10 wherein said piezoresistive strain sensing elements comprise transistors.

13. The strain sensing means of claim 12 wherein said transistors comprise insulated gate field effect transistors.

14. The strain sensing means of claim 10 wherein said piezoresistive strain sensing elements are intimately attached to said main body and said flexing means.

15. The strain sensing means of claim 14 wherein said main body and said flexing means comprise semiconductor material and said piezoresistive strain sensing elements are formed by vapor deposition on said semiconductor material.

16. The strain sensing means of claim 10 wherein said main body and said flexing means comprise semiconductor material and said piezoresistive strain sensing elements are formed integrally with said semiconductor material.

17. The strain sensing means of claim 16 wherein said piezoresistive strain sensing elements are formed in said main body and and flexing means by diffusion.

18. In an electromechanical transducer having a main body and flexing means attached to said main body for flexing in response to an external stimulus applied to said transducer, strain sensing means responsive to flexion of said flexing means for providinig an output signal representative of the external stimulus, said strain sensing means comprising:

a first input port to be connected to a first source of electrical power;

a first output port to deliver a first output signal;

a first piezoresistive full bridge electrically connecting said first input port and said first output port and having two pairs of opposing arms, said first piezoresistive full bridge comprising two piezoresistive strain sensing elements coupled to said flexing means and forming one of said pairs of opposing arms to sense strain in said flexing means in a predetermined direction and two piezoresistive strain sensing elements coupled to said main body and forming the other of said pairs of opposing arms to sense non-strain effects in said main body in the predetermined direction;

a second input port to be connected to a second source of electrical power;

20. The strain sensing means of claim 18 wherein said piezoresistive strain sensing elements comprise resistors.

21. The strain sensing means of claim 18 wherein said piezoresistive strain sensing elements comprise transistors.

22. The strain sensing means of claim 20 wherein said transistors comprise insulated gate field effect transistors.

23. The strain sensing means of claim 18 wherein said piezoresistive strain sensing elements are intimately attached to said main body and said flexing means.

24. The strain sensing means of claim 22 wherein said main body and said flexing means comprise semiconductor material and said piezoresistive strain sensing elements are formed by vapor deposition on said semiconductor material.

25. The strain sensing means of claim 18 wherein said main body and said flexing means comprise semiconductor material and said piezoresistive strain sensing elements are formed integrally with said semiconductor material.

26. The strain sensing means of claim 24 wherein said piezoresistive strain sensing elements are formed in said main body and and flexing means by diffusion.

27. The strain sensing means of claim 18 wherein said flexing means has a direction of maximum strain, said piezoresistive strain sensing elements coupled to said flexing means sensing strain in substantially said direction of maximum strain.

29. The strain sensing means of claim 27 wherein said piezoresistive strain sensing elements comprise resistors.

30. The strain sensing means of claim 27 wherein said piezoresistive strain sensing elements comprise transistors.

31. The strain sensing means of claim 29 wherein said transistors comprise insulated gate field effect transistors.

32. The strain sensing means of claim 27 wherein said piezoresistive strain sensing elements are intimately attached to said main body and said flexing means.

33. The strain sensing means of claim 31 wherein said main body and said flexing means comprise semiconductor material and said piezoresistive strain sensing elements are formed by vapor deposition on said semiconductor material.

34. The strain sensing means of claim 27 wherein said main body and said flexing means comprise semiconductor material and said piezoresistive strain sensing elements are formed integrally with said semiconductor material.

35. The strain sensing means of claim 33 wherein said piezoresistive strain sensing elements are formed in said main body and said flexing means by diffusion.

37. The strain sensing means of claim 35 wherein said piezoresistive strain sensing elements comprise resistors.

38. The strain sensing means of claim 35 wherein said piezoresistive strain sensing elements comprise transistors.

39. The strain sensing means of claim 37 wherein said transistors comprise insulated gate field effect transistors.

40. The strain sensing means of claim 35 wherein said piezoresistive strain sensing elements are intimately attached to said main body and said flexing means.

41. The strain sensing means of claim 39 wherin said main body and said flexing means comprise semiconductor material and said piezoresistive strain sensing elements are formed by vapor deposition on said semiconductor material.

42. The strain sensing means of claim 35 wherein said main body and said flexing means comprise semiconductor material and said piezoresistive strain sensing elements are formed integrally with said semiconductor material.

43. The strain sensing means of claim 41 wherein said piezoresistive strain sensing elements are formed in said main body and said flexing means by diffusion.

44. The strain sensing means of claim 35 wherein said flexing means has a direction of maximum strain and the predetermined direction is substantially said direction of maximum strain.

19. a second output port to deliver a second output signal;

a second piezoresistive full bridge electrically connecting said second input port and said second output port and having two pairs of opposing arms, said second piezoresistive full bridge comprising two piezoresistive strain sensing elements coupled to said flexing means and forming one of said pairs of opposing arms to sense strain in said flexing means in the predetermined direction and two piezoresistive strain sensing elements coupled to said main body and forming the other of said pairs of opposing arms to sense non-strain effects in said main body in the predetermined direction; and

output means coupled to said first output port and said second output port for combining the first output signal and the second output signal into the output signal.

28. In an electromechanical transducer having a main body and flexing means attached to said main body for flexing in response to an external stimulus applied to said transducer, said flexing means having a direction of maximum strain corresponding to a principal axis of the external stimulus, strain sensing means responsive to flexion of said flexing means for providing a first output signal representative of a component of the external stimulus in a direction substantially parallel to the principal axis and a second output signal representative of a component of the external stimulus in a direction substantially parallel to the principal axis and a second output signal representative of a component of the external stimulus in a direction other than substantially parallel to the principal axis, said strain sensing means comprising:

a first piezoresistive voltage divider connected across a first source of electrical power, said first piezoresistive voltage divider comprising in series a piezoresistive strain sensing element coupled to said flexing means, a first output terminal, and a piezoresistive strain sensing element coupled to said main body, said first piezoresistive voltage divider providing across said piezoresistive strain sensing element coupled to said main body a voltage representing non-strain effects in said main body substantially in the direction of maximum strain;

a second piezoresistive voltage divider connected across a second source of electrical power, said second piezoresistive voltage divider comprising in series a piezoresistive strain sensing element coupled to said main body, a second output terminal, and a piezoresistive strain sensing element coupled to said flexing means, said second piezoresistive voltage divider providing across said piezoresistive strain sensing element coupled to said flexing means a voltage representing strain in said flexing means substantially in the direction of maximum strain;

first output means coupled to said first and second output terminals for providing, as the first output signal, the voltage between said terminals;

a third piezoresistive voltage divider connected across a third source of electrical power, said third piezoresistive voltage divider comprising in series of piezoresistive strain sensing element coupled to said flexing means, a third output terminal, and a piezoresistive strain sensing element coupled to said main body, said third piezoresistive voltage divider providing across said piezoresistive strain sensing element coupled to said main body a voltage representing non-strain effects in said main body in a direction other than the direction of maximum strain;

a fourth piezoresistive voltage divider connected across a fourth source of electrical power, said fourth piezoresistive voltage divider comprising in series a piezoresistive strain sensing element coupled to said main body, a fourth output terminal, and a piezoresistive strain sensing element coupled to said flexing means, said fourth piezoresistive voltage divider providing across said piezoresistive strain sensing element coupled to said flexing means a voltage representing strain in said flexing means substantially in the direction other than the direction of maximum strain; and

second output means coupled to said third and fourth output terminals for providing, as the second output signal, the voltage between said terminals.

36. In an electromechanical transducer having a main body and flexing means attached to said main body for flexing in response to an external stimulus applied to said transducer, strain sensing means responsive to flexion of said flexing means for providing an output signal representative of the external stimulus, said strain sensing means comprising:

a first piezoresistive voltage divider connected across a first source of electrical power, said first piezoresistive voltage divider comprising in series a piezoresistive strain sensing element coupled to said flexing means, a first output terminal, and a piezoresistive strain sensing element coupled to said main body, said first peizoresistive voltage divider providing across said piezoresistive strain sensing element coupled to said main body a voltage representing non-strain effects in said main body in a predetermined direction;

a second piezoresistive voltage divider connected across a second source of electrical power, said second piezoresistive voltage divider comprising in series a piezoresistive strain sensing element coupled to said main body, a second output terminal, and a piezoresistive strain sensing element coupled to said flexing means, said second piezoresistive voltage divider providing across said piezoresistive strain sensing element coupled to said flexing means a voltage representing strain in said flexing means in the predetermined direction;

a third piezoresistive voltage divider connected across a third source of electrical power, said third piezoresistive voltage divider comprising in series a piezoresistive strain sensing element coupled to said flexing means, a third output terminal, and a piezoresistive strain sensing element coupled to said main body, said third piezoresistive voltage divider providing across said piezoresistive strain sensing element coupled to said main body a voltage representing non-strain effects in said main body in the predetermined direction;

a fourth piezoresistive voltage divider connected across a fourth source of electrical power, said fourth piezoresistive voltage divider comprising in series a piezoresistive strain sensing element coupled to said main body, a fourth output terminal, and a piezoresistive strain sensing element coupled to said flexing means, said fourth piezoresistive voltage divider providing across said piezoresistive strain sensing element coupld to said flexing means a voltage representing strain in said flexing means in the predetermined direction; and

output means coupled to said first, second, third, and fourth ouptut terminals for combining the voltages at said terminals into the output signal.