Reactor and susceptor for chemical vapor deposition process

• US 4,522,149 A
• Filed: 11/21/1983
• Issued: 06/11/1985
• Est. Priority Date: 11/21/1983
• Status: Expired due to Term

• Current Assignee: General Semiconductor, Inc. (Vishay Intertechnology Incorporated)
• Original Assignee: General Instrument Corporation (CommScope Holding Company, Inc.)
• Inventors: Chan, Joseph Y., Garbis, Dennis, Granata, Amedeo J., Heller, Robert C.
• Primary Examiner(s): Smith, John D.
• Assistant Examiner(s): Plantz, Bernard F.
• Application Number:
  US06/553,962
• Time in Patent Office: 568 Days
• Field of Search: 118/728, 118/725, 118/500, 118/729, 118/730, 219/10.49 R, 219/10.67, 219/10.57, 219/10.49 A
• US Class Current: 118/725
• CPC Class Codes: C23C 16/458 characterised by the method used for supporting substrates in the reaction chamber

Abstract

A reactor for use in a chemical vapor deposition process occurring in a radiant absorption heater system employs a vertical gas flow reaction vessel and a novel substantially solid susceptor configured as a truncated wedge. The susceptor is characterized by a high utilized area, resulting in a high wafer capacity and low power requirement.

Claims

1. A reactor for use in a chemical vapor deposition process comprising:

(a) a reaction vessel having a gas inlet, a gas outlet and a substantially vertical gas flow path therebetween;

(b) a substantially solid susceptor configured as a truncated wedge, said susceptor comprising a body having a top, a bottom, a pair of longitudinally spaced ends, and a converging pair of opposed faces;

each of said faces having means to receive a plurality of wafers and maintain the wafers exposed to said gas flow path, said susceptor being disposed within said reaction vessel with said opposed faces converging in a direction counter to that of said gas flow path; and

(c) heating means disposed about said reaction vessel for heating said susceptor.

2. The reactor of claim 1 wherein said reaction vessel has said gas inlet adjacent the top thereof and said gas outlet adjacent the bottom thereof.

3. The reactor of claim 1 wherein said susceptor ends are trapezoidal in configuration.

4. The reactor of claim 1 wherein said susceptor top and bottom are generally parallel, and said susceptor ends are generally parallel.

5. The reactor of claim 1 wherein said susceptor is configured and dimensioned so that over 30% of its surface area may be occupied by wafers.

6. The reactor of claim 5 wherein said susceptor is configured and dimensioned so that over 40% of its surface area may be occupied by wafers.

7. The reactor of claim 1 wherein each of said faces extends further horizontally than vertically.

8. The reactor of claim 1 wherein each of said faces has an equal number of said receiving means.

9. The reactor of claim 8 wherein each of said faces has means to receive a vertically spaced plurality of horizontally extending rows of wafers.

10. The reactor of claim 9 wherein each of said faces has three rows of said receiving means.

11. The reactor of claim 10 wherein each of said faces has three rows of six receiving means each.

12. The reactor of claim 1 additionally comprising means for positioning said susceptor in said reaction vessel, said susceptor having a groove in each of its ends into which said positioning means is received.

13. The reactor of claim 1 wherein said heating means comprises a radiant absorption heating system.

14. The reactor of claim 1 wherein said substantially solid susceptor configured as a truncated wedge for use in a vertical gas flow is characterized by a power requirement of less than 1.1 P, where P is the power requirement of a substantially solid susceptor configured as a rectangular parallelopiped for use in a horizontal gas flow, the rectangular parallelopiped susceptor having dimensions equal to the average corresponding dimensions of said truncated wedge susceptor.

15. The reactor of claim 1 wherein said substantially solid susceptor configured as a truncated wedge for use in a vertical gas flow is characterized by a capacity of N wafers of given size and a power requirement of P as compared with a substantially solid susceptor configured as a rectangular parallelopiped for use in a horizontal gas flow, the rectangular parallelopiped susceptor having dimensions equal to the average corresponding dimensions of said truncated wedge susceptor and being characterized by a capacity of 0.5N wafers of said given size and a power requirement of at least 0.9 P.