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Thin films of mixed metal compounds

  • US 4,523,051 A
  • Filed: 09/27/1983
  • Issued: 06/11/1985
  • Est. Priority Date: 09/27/1983
  • Status: Expired due to Term
First Claim
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1. A method for forming a uniform composition thin film of a polycrystalline mixed metal compound on a substrate, said method consisting essentially of the steps of:

  • (a) introducing a vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source to said vessel to form a vapor mixture comprised of metal compounds, said first and second metals comprising the metal components of said mixed metal compound;

    (b) independently controlling the vaporization rate of said first and second vapor sources;

    (c) reducing the mean free path between vapor particles of said mixture in said vessel by including a gas within said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and

    (d) depositing said homogeneous vapor mixture on said substrate to form a uniform composition polycrystalline film of said first and second metal compounds thereon.

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