Process for forming passivation film on photoelectric conversion device and the device produced thereby

• US 4,527,007 A
• Filed: 01/25/1984
• Issued: 07/02/1985
• Est. Priority Date: 02/02/1983
• Status: Expired due to Term

• Current Assignee: Fuji Xerox Company Limited (Fujifilm Holdings Corporation)
• Original Assignee: Fuji Xerox Company Limited (Fujifilm Holdings Corporation)
• Inventors: Fuse, Mario
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/573,875
• Time in Patent Office: 524 Days
• Field of Search: 136/256, 136/258 AM, 357/30, 357/52, 357/72-73, 427/39, 427/74, 427/95, 29/572
• US Class Current: 136/256
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: H01L 31/0216 Coatings H01L31/041 takes precedence
• CPC Class Codes: H01L 31/022466 made of transparent conductive layers, e.g. TCO, ITO layers
• CPC Class Codes: H01L 31/022475 composed of indium tin oxide [ITO]
• CPC Class Codes: Y10S 438/958 Passivation layer

Abstract

In a process for producing a photoelectric conversion device having a junction between hydrogenated amorphous silicon and an electrode made of ITO or the like, on the surface of which a passivation film made of silicon oxide is provided, the passivation film being formed by the plasma CVD method in an atmosphere of mixed gas prepared by admixing an excess of oxygen-containing gas, such as nitrous oxide, carbon dioxide, oxygen, or the like, with silane gas. The surface of the photoelectric conversion device is covered with a silicon oxide film formed in accordance with the plasma CVD method at a temperature of less than 300° C. in an atmosphere of mixed gas consisting of silane gas and an excess of oxygen-containing gas.

Claims

1. A process for forming a passivation film made of silicon oxide on the surface of a photoelectric conversion device having a layer of hydrogenated amorphous silicon between a transparent upper conductive electrode and a lower electrode on a substrate, and having a junction between said layer of hydrogenated amorphous silicon and said upper transparent conductive electrode, comprising the step of forming said passivation film by the plasma chemical vapor deposition method at a temperature lower than 300°

C. in an atmosphere of mixed gas prepared by admixing an excess of oxygen-containing gas with silane gas.

2. A process for forming a passivation film as claimed in claim 1, wherein said oxygen-containing gas is selected from the group consisting of nitrous oxide, carbon dioxide, and oxygen.

3. A process for forming a passivation film as claimed in claim 1, wherein said oxygen-containing gas is admixed with said silane gas in a mixing ratio of 20:

1 to 80;

1.

4. A process for forming a passivation film as claimed in claim 1, wherein said transparent conductive electrode is made of indium-tin oxide.

5. A process for forming a passivation film as claimed in claim 1, wherein said mixed gas contains an inert gas such as argon, helium, or the like as a carrier gas.

6. A photoelectric conversion device having a layer of hydrogenated amorphous silicon between a transparent upper indium-tin oxide electrode and a lower electrode on a substrate, and having a junction between said layer of hydrogenated amorphous silicon and said indium-tin oxide electrode, comprising a silicon oxide film covering the surface of said photoelectric conversion device formed by the plasma chemical vapor deposition method at a temperature lower than 300°

C. in an atmosphere of mixed gas consisting of silane gas and an excess of oxygen-containing gas.