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Process for forming passivation film on photoelectric conversion device and the device produced thereby

  • US 4,527,007 A
  • Filed: 01/25/1984
  • Issued: 07/02/1985
  • Est. Priority Date: 02/02/1983
  • Status: Expired due to Term
First Claim
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1. A process for forming a passivation film made of silicon oxide on the surface of a photoelectric conversion device having a layer of hydrogenated amorphous silicon between a transparent upper conductive electrode and a lower electrode on a substrate, and having a junction between said layer of hydrogenated amorphous silicon and said upper transparent conductive electrode, comprising the step of forming said passivation film by the plasma chemical vapor deposition method at a temperature lower than 300°

  • C. in an atmosphere of mixed gas prepared by admixing an excess of oxygen-containing gas with silane gas.

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