Light energy conversion system

• US 4,528,252 A
• Filed: 03/28/1983
• Issued: 07/09/1985
• Est. Priority Date: 03/29/1982
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/479,558
• Time in Patent Office: 834 Days
• Field of Search: 429/111, 204/129, 204/266, 204/278
• US Class Current: 429/111
• CPC Class Codes: H01G 9/20 Light-sensitive devices
• CPC Class Codes: H01M 14/005 Photoelectrochemical storage cells light sensitive devices H01G9/20, semiconductors sensitive to light H01L31/00
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A semiconductor photoelectric conversion structure having a PIN junction is assembled as a unitary structure with a redox chamber, with the P (or N) type semiconductor layer of the former being heavily doped and held in contact with an aqueous solution contained in a cell compartment of the redox reaction chamber. By interconnecting a second electrode connected to the N (or P) type semiconductor layer of the semiconductor photoelectric conversion structure and a first electrode held in contact with an aqueous solution contained in another cell compartment of the redox reaction chamber, H₂ (or O₂) and O₂ (or H₂) gases are released from the first and second cells, respectively. Alternatively, electric power may be generated by connecting a first lead to the P (or N) type layer and a second lead to the second electrode.

Claims

1. A light energy conversion system comprising:

a redox reaction chamber provided with first and second cells intercommunicating through a bridge and respectively containing first and second aqueous solutions of the same kind, and first and second gas outlet means extending outwardly of the first and second cells, respectively;

a semiconductor photoelectric conversion structure having a first non-single-crystalline semiconductor layer of a P or N first conductivity type, an I type second non-single-crystalline semiconductor layer formed on the first semiconductor layer, and a heavily doped, third non-single-crystalline semiconductor layer of a second conductivity type opposite that of the first conductivity type of the first non-single-crystalline semiconductor layer formed on the second non-single-crystalline semiconductor layer;

a first electrode in contact with the first aqueous solution contained in the first cell of the redox reaction chamber;

a second electrode connected to the first non-single-crystalline semiconductor layer of the photoelectric conversion semiconductor structure and paired with the first electrode; and

means for electrically interconnecting the first and second electrodes; and

wherein the semiconductor photoelectric conversion structure is provided in the second cell (a) so that it forms a part of the cell wall, (b) so that light is incident on the semiconductor photoelectric conversion structure directly without passing through the second aqueous solution, and (c) so that only the portion of the semiconductor photoelectric conversion structure on the side of the third non-single-crystalline semiconductor is held in contact with the second aqueous solution.

2. A light energy conversion system according to claim 1 wherein the bridge in the redox reaction chamber is an aqueous solution bridge which permits the passage therethrough of the first and second aqueous solutions contained in the first and second cells.

3. A light energy conversion system according to claim 1 wherein the bridge in the redox reaction chamber is an ion bridge permits the passage therethrough of ions generated in the aqueous solutions contained in the first and second cells.

4. A light energy conversion system according to claim 1, 2 or 3, wherein the second conductivity type of the third semiconductor layer is the N type, and wherein the first and second gas outlet means an oxygen and hydrogen gas outlet means, respectively.

5. A light energy conversion system according to claim 4, wherein the third semiconductor layer of the semiconductor photoelectric conversion structure is formed of Si₃ N_4-x (0<

x<

4) or Si_x C_1-x (0<

x<

1).

6. A light energy conversion system according to claim 4 which further comprises aqueous solution inlet means for introducing into the first and second cells of the redox reaction chamber an aqueous solution serving as the first and second aqueous solutions therein.

7. A light energy conversion system according to claim 1, 2 or 3 wherein the second conductivity type of the third semiconductor layer is the P type, and wherein the first and second gas outlet means are hydrogen and oxygen gas outlet means, respectively.

8. A light energy conversion system according to claim 7, wherein the third semiconductor layer of the semiconductor photoelectric conversion structure is formed of Si₃ N_4-x (0<

x<

4) or Si_x C_1-x (0<

x<

1).

9. A light energy conversion system according to claim 7 which further comprises aqueous solution inlet means for introducing into the first and second cells of the redox reaction chamber an aqueous solution serving as the first and second aqueous solutions therein.

10. A light energy conversion system according to claim 1, 2 or 3 wherein the third semiconductor layer of the semiconductor photoelectric conversion structure is formed of Si, germanium silicide, Si₃ N_4-X (0<

X<

4), or Si_X C_1-X (0<

X<

1).

11. A light energy conversion system according to claim 10 wherein the first conductivity type of third non-single-crystalline semiconductor layer is the N type, and wherein the third non-single-crystalline semiconductor layer contains 0.01 to 3 mol % of Sb, As, or P as an N type impurity.

12. A light energy conversion system according to claim 11 which further comprises aqueous solution inlet means for introducing into the first and second cells of the redox reaction chamber an aqueous solution serving as the first and second aqueous solutions therein.

13. A light energy conversion system according to claim 10 wherein the first conductivity type of the third non-single-crystalline semiconductor layer is the P type, and the third non-single-crystalline semiconductor layer contains 0.01 to 3 mol % of In, Ga, or Al as a P type impurity.

14. A light energy conversion system according to claim 13 which further comprises aqueous solution inlet means for introducing into the first and second cells of the redox reaction chamber an aqueous solution serving as the first and second aqueous solutions therein.

15. A light energy conversion system according to claim 10 which further comprises aqueous solution inlet means for introducing into the first and second cells of the redox reaction chamber an aqueous solution serving as the first and second aqueous solutions therein.

16. A light energy conversion system according to claim 1, 2 or 3 which further comprises aqueous solution inlet means for introducing into the first and second cells of the redox reaction chamber an aqueous solution serving as the first and second aqueous solutions therein.

17. A light energy conversion system according to claims 1, 2, or 3 which further comprises a first lead connected to the third semiconductor layer of the photoelectric conversion semiconductor structure and a second lead connected to the second electrode.