End point control in plasma etching

• US 4,528,438 A
• Filed: 01/07/1983
• Issued: 07/09/1985
• Est. Priority Date: 09/16/1976
• Status: Expired due to Term

• Current Assignee: Nortel Networks Limited (Nortel Networks Corporation)
• Original Assignee: Northern Telecom Limited (Nortel Networks Corporation)
• Inventors: Westwood, William D., Smith, Gerald M., Poulsen, Robert G.
• Primary Examiner(s): PASCHALL, MARK H
• Application Number:
  US06/456,506
• Time in Patent Office: 914 Days
• Field of Search: 219/121 PD, 219/121 PG, 219/121 PE, 219/121 PF, 204/192 E, 204/192 EC, 204/164, 156/345, 156/643, 156/646
• US Class Current: 219/121.41
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

The end point in plasma etching is detected by monitoring the optical emission from the plasma, selecting a particular optical emission line and detecting a substantial variation in the intensity of the emission. This indicates a change in material being etched and thus the completion of etching of one material, or the beginning of etching of another material. It is also applicable to removing, or etching, photoresist material.

Claims

1. A process for the uniform application of a pattern to a plurality of workpieces by selective etching, comprising the steps of:

(a) exposing a plurality of workpieces in a reaction space to a chemically reactive plasma which etches the exposed surface of each workpiece by chemically reacting with the material from which said surface is comprised;

(b) monitoring the variation over time of the amplitude of at least one atomic emission line of the atomic emission spectrum of said plasma during the reaction of said plasma with said workpieces, said emission line having an amplitude which is sensitive to the concentration in said plasma of a member selected from a product of said reaction or an etching radical; and

(c) determining the end point of said selective etching by a change in said amplitude.

2. A process as in claim 1, wherein said emission line has an amplitude which is sensitive to the concentration in said plasma of a product of said reaction.

3. A process as in claim 1, further comprising the step (d), following step (c), of terminating said selective etching at a predetermined time after said end point determination.

4. A process as in claim 2, wherein at least a first one of said workpieces comprises a substrate comprised of a first material and a layer of a second material applied directly to said substrate, which layer comprised of said second material is exposed to said plasma, said atomic emission line having an amplitude during etching of said first material in said plasma which substantially differs from the amplitude for etching said second material in said plasma.

5. A process as in claim 4, wherein at least one of the remaining workpieces comprises an outer layer comprised of said second material having a thickness substantially equal to the layer of said second material in said first workpiece, and a layer of a third material adjacent to said second layer, said atomic emission line having an amplitude during etching of said third material in said plasma which does not substantially differ from the amplitude for said second material in said plasma, and wherein the end point for all of said workpieces is determined by a change in the amplitude of said atomic emission line for etching said first and second materials.

6. A process as in claim 5, wherein said second material consists essentially of Si₃ N₄ and said third material consists essentially of SiO₂.

7. A process as in claim 4, wherein said layer of second material in said first workpiece is slightly thinner than the layer of said second material in said remaining workpieces.

8. A process as in claim 4, further comprising the step of subjecting said layer of second material in said first workpiece to a slight pre-etch before said step (a).

9. A process as in claim 7, further comprising the steps following step (c) of terminating said selective etching at said determined end point, and thereafter subjecting said at least one remaining workpiece to a wet chemical etching treatment, which does not degrade resolution of said pattern, to complete removal of said layer of second material.

10. A process as in claim 1, wherein said emission line has an amplitude which is sensitive to the concentration in said plasma of an etching radical.

12. A process as in claim 1, where at least one of said workpieces is exposed to said plasma through a photoresist.

13. A process as in claim 2, wherein said second material consists essentially of silicon and said first material consists essentially of SiO₂.

14. A process as in claim 1, wherein said chemically reactive plasma comprises CF₄.

15. A process as in claim 1, wherein said atomic emission line is at about 0.70 m wavelength.

16. A process as in claim 4, wherein each of the remainder of said workpieces comprises a substrate comprised of a first material and a layer comprised of a second material applied directly to said substrate, which layer comprised of said second material is exposed to said plasma, said atomic emission line having an amplitude during etching of said first material in said plasma which substantially differs from the amplitude for etching said second material in said plasma, whereby said plurality of workpieces does not comprise a dummy wafer.

11. A method for providing end point control in a plasma etching process for removing a material from a workpiece, comprising the steps of:

(a) selectively removing material from a workpiece by chemical reaction between etching radicals in a plasma and the material being removed;

(b) monitoring an atomic emission line having an amplitude which is sensitive to the concentration in said plasma of a product of said reaction;

(c) determining the end point of said plasma etching process by a change in said amplitude; and

(d) terminating said chemical reaction at a predetermined time after said detected end point.