Method of cleaning apparatus for forming deposited film

• US 4,529,474 A
• Filed: 01/30/1984
• Issued: 07/16/1985
• Est. Priority Date: 02/01/1983
• Status: Expired due to Term

• Current Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Kamiya, Osamu, Fujiyama, Yasutomo
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/574,989
• Time in Patent Office: 533 Days
• Field of Search: 156/345, 156/643, 156/646, 204/164, 204/192 EC, 204/192 E, 204/298, 427/38, 427/39, 427/93, 427/95, 118/50, 118/50.1, 118/620, 118/715, 118/728, 252/79.2, 134/1
• US Class Current: 134/1.1
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23F 4/00 Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00

Abstract

A method of cleaning an apparatus for forming deposited film on a substrate to remove the substances attached to the inside walls of a reaction chamber in the course of the formation of deposited film on the substrate by etching with plasma reaction comprises using a gas mixture of carbon tetrafluoride and oxygen as etchant.

Claims

1. A method of cleaning an apparatus for forming deposited film on a substrate to remove the substances attached to the inside walls of a reaction chamber in the course of the formation of deposited film on the substrate by etching with plasma reaction, which comprises using a gas mixture of carbon tetrafluoride and oxygen as ethant, wherein the partial pressure ratio of (O₂ /CF₄) in said gas mixture is 8 to 30%.

2. A method according to claim 1 wherein said gas mixture is introduced into the apparatus from a gas emitting inlet disposed on the inside of the end of the apparatus opposite to an evacuating outlet.

3. A method according to claim 1 wherein the region to be cleaned is controlled by changing the vacuum degree in the reaction chamber when said gas mixture is introduced into the reaction chamber.