Process for manufacturing a matrix infrared detector with illumination by the front face

• US 4,532,699 A
• Filed: 11/25/1983
• Issued: 08/06/1985
• Est. Priority Date: 11/30/1982
• Status: Expired due to Fees

• Current Assignee: Societe Anonyme de Telecommunications (Safran SA)
• Original Assignee: Societe Anonyme de Telecommunications (Safran SA)
• Inventors: Gauthier, Andre, Pitault, Bernard, Bourdillot, Michel, Maille, Jacques
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): Auyang, Hunter L.
• Application Number:
  US06/555,163
• Time in Patent Office: 620 Days
• Field of Search: 29/572, 29/580, 29/591, 29/590, 357/30, 357/56, 357/76, 156/649, 204/38 B, 204/192 C, 427/91
• US Class Current: 438/59
• CPC Class Codes: H01L 25/042 the devices being arranged next to each other solar cells H01L31/042
• CPC Class Codes: H01L 27/14649 Infrared imagers
• CPC Class Codes: H01L 27/14687 Wafer level processing
• CPC Class Codes: H01L 27/14696 The active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10S 257/926 Elongated lead extending axially through another elongated lead
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

A parallelepipedic detection wafer of type p made of Hg Cd Te is taken, islets or raised zones are formed from the front face and their structure is rounded, zones of type n are diffused from the front face, in order to form junctions, metallic contact terminals are formed from the front face up to the bottom level of the raised zones, the detection wafer is thinned from the rear face, the terminals are isolated, the pieces of raised zones are attached by the rear face on a processing wafer and the terminals are welded on metallization zones of the processing wafer. The invention enables an infrared detector for camera to be manufactured.

Claims

1. A process for manufacturing a matrix infrared detector with illumination on a front face, which comprises providing a first semi-conductor wafer of one conductivity type, p or n, and forming thereon, from the front face to be illuminated, a relief in the form of islets or raised zones having top and bottom levels and side walls connecting said top and bottom levels;

depositing a dielectric layer on said relief zones, opening a window in said dielectric layer, using said dielectric layer as a diffusion mask and as an insulating layer for a subsequently deposited metallization layer, diffusing through said window a dopant into the top level of the relief zones to form regions of an opposite conductivity type in order to define junctions and to form a matrix of elementary detectors;

forming, in one step, a metallic connection on each said relief zone that extends from said region of an opposite conductivity type on said top level of said relief zone and thence over at least one of said side walls of said relief zone and thence to the bottom level of said relief zone adjacent said one side wall;

thinning the wafer from its rear face up to the ottom level of the relief zone and isolating the contact terminals;

disposing the thinned wafer, by its rear face, on a second semi-conductor processing wafer adapted to process the signals delivered by the elementary detectors of the wafer; and

connecting said contact terminals to associated metallization zones of the processing wafer.

2. The process of claim 1, wherein the contact terminals are firstly formed by one of the two processes of thermal evaporation and cathode sputtering process, before being enlarged by the electrolytic process.

3. The process of claim 1, wherein the structure of the raised zones is rounded after they have been formed.

4. The process of claim 1, wherein, before the wafer is thinned, it is glued by its front face on a support plate.

5. The process of claim 1, wherein the detection wafer is thinned by mechanical means.

6. The process of claim 1, wherein the contact terminals are isolated by a chemical process.

7. The process of claim 1, wherein the contact terminals are isolated by ionic abrasion.

8. The process of claim 1, wherein the detection wafer is disposed on the processing wafer by adhesion.

9. The process of claim 1, wherein the wafer is composed of Hg Cd Te.