Process for manufacturing a matrix infrared detector with illumination by the front face
First Claim
1. A process for manufacturing a matrix infrared detector with illumination on a front face, which comprises providing a first semi-conductor wafer of one conductivity type, p or n, and forming thereon, from the front face to be illuminated, a relief in the form of islets or raised zones having top and bottom levels and side walls connecting said top and bottom levels;
- depositing a dielectric layer on said relief zones, opening a window in said dielectric layer, using said dielectric layer as a diffusion mask and as an insulating layer for a subsequently deposited metallization layer, diffusing through said window a dopant into the top level of the relief zones to form regions of an opposite conductivity type in order to define junctions and to form a matrix of elementary detectors;
forming, in one step, a metallic connection on each said relief zone that extends from said region of an opposite conductivity type on said top level of said relief zone and thence over at least one of said side walls of said relief zone and thence to the bottom level of said relief zone adjacent said one side wall;
thinning the wafer from its rear face up to the ottom level of the relief zone and isolating the contact terminals;
disposing the thinned wafer, by its rear face, on a second semi-conductor processing wafer adapted to process the signals delivered by the elementary detectors of the wafer; and
connecting said contact terminals to associated metallization zones of the processing wafer.
1 Assignment
0 Petitions
Accused Products
Abstract
A parallelepipedic detection wafer of type p made of Hg Cd Te is taken, islets or raised zones are formed from the front face and their structure is rounded, zones of type n are diffused from the front face, in order to form junctions, metallic contact terminals are formed from the front face up to the bottom level of the raised zones, the detection wafer is thinned from the rear face, the terminals are isolated, the pieces of raised zones are attached by the rear face on a processing wafer and the terminals are welded on metallization zones of the processing wafer. The invention enables an infrared detector for camera to be manufactured.
-
Citations
9 Claims
-
1. A process for manufacturing a matrix infrared detector with illumination on a front face, which comprises providing a first semi-conductor wafer of one conductivity type, p or n, and forming thereon, from the front face to be illuminated, a relief in the form of islets or raised zones having top and bottom levels and side walls connecting said top and bottom levels;
- depositing a dielectric layer on said relief zones, opening a window in said dielectric layer, using said dielectric layer as a diffusion mask and as an insulating layer for a subsequently deposited metallization layer, diffusing through said window a dopant into the top level of the relief zones to form regions of an opposite conductivity type in order to define junctions and to form a matrix of elementary detectors;
forming, in one step, a metallic connection on each said relief zone that extends from said region of an opposite conductivity type on said top level of said relief zone and thence over at least one of said side walls of said relief zone and thence to the bottom level of said relief zone adjacent said one side wall;
thinning the wafer from its rear face up to the ottom level of the relief zone and isolating the contact terminals;
disposing the thinned wafer, by its rear face, on a second semi-conductor processing wafer adapted to process the signals delivered by the elementary detectors of the wafer; and
connecting said contact terminals to associated metallization zones of the processing wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
- depositing a dielectric layer on said relief zones, opening a window in said dielectric layer, using said dielectric layer as a diffusion mask and as an insulating layer for a subsequently deposited metallization layer, diffusing through said window a dopant into the top level of the relief zones to form regions of an opposite conductivity type in order to define junctions and to form a matrix of elementary detectors;
Specification