Process for forming slots having near vertical sidewalls at their upper extremities

• US 4,533,430 A
• Filed: 01/04/1984
• Issued: 08/06/1985
• Est. Priority Date: 01/04/1984
• Status: Expired due to Term

• Current Assignee: RPX Corporation
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Bower, Robert W.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/567,971
• Time in Patent Office: 580 Days
• Field of Search: 156/643, 156/644, 156/646, 156/648, 156/651, 156/653, 156/657, 156/659.1, 156/662, 156/667, 204/164, 204/192 E, 427/86, 427/88, 427/93, 427/94, 427/38, 427/39, 427/309, 357/47, 357/49, 357/55, 357/65, 148/1.5, 148/187, 29/576 W, 29/580
• US Class Current: 438/695
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/3085 characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
• CPC Class Codes: H01L 21/76232 of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls H01L21/76229 takes precedence
• CPC Class Codes: H01L 21/76237 introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
• CPC Class Codes: H01L 21/763 Polycrystalline semiconductor regions H01L21/76264 takes precedence

Abstract

A slot formation process is provided in which the regions near the mouth of the slot are coated, while the slot is being formed, with a material which is resistant to the etchant being used to form the slot. The coating may be applied continuously or may be applied at specific points in the slot formation process. During the formation of the middle and bottom regions of the slot the coated upper regions retain a nearly vertical contour shape since they are protected from undesired etching by ions whose trajectories have been impacted by charge accumulations at the mouth of the slot. The coating material may be a thin oxide layer of the semiconductor material or may be a layer of an appropriate etch resistant material.

Claims

1. A process for fabricating slots in a wafer of semiconductor material wherein the slots have nearly vertical sidewalls near the mouth of the slot, comprising the steps of:

applying an etch-resistant mask material to the surface of said wafer of semiconductor material;

patterning said mask material to expose regions in said substrate in which slots are to be formed;

etching said exposed regions in said substrate to form said slots; and

forming an etch resistant coating on the walls of said slots while they are being formed whereby said etch resistant coating protects said sidewalls near the mouth of the slot from unwanted etching so they retain a nearly vertical shape.

2. A process for fabricating slots in accordance with claim 1 wherein said step of forming an etch resistant coating is accomplished by the step of supplying a partial pressure of oxygen in the chamber in which said wafer is being etched while said slots are being formed.

3. A process for fabricating slots in accordance with claim 1 wherein said step of etching said exposed regions comprises the step of etching said exposed regions in said substrate until said slots are partially formed and wherein said step of forming an etch resistant coating is accomplished by the step of:

treating the surface of said partially formed slot to form an etch resistant coating after said slots are partially formed.

4. A process for fabricating slots in accordance with claim 3 wherein said step of treating said surface of said partially formed slot is accomplished by the step of thermally oxidizing the exposed surface of the semiconductor material in said partially formed slot.

5. A process for fabricating slots in accordance with claim 3 wherein said step of treating the surface of said partially formed slot is accomplished by the step of exposing the surface of said partially formed slots to a solution of hydrogen peroxide.

6. A process for fabricating slots in accordance with claim 5 wherein said step of exposing the surface of said partially formed slots to a solution of hydrogen peroxide is accomplished by the step of exposing the surface of said partially formed slots to a 30% solution of hydrogen peroxide in water for about ten minutes.

7. A process for fabricating slots in accordance with claim 3 wherein said step of treating the surface of said partially formed slot is accomplished by the step of applying a layer of etch resistant material by low pressure chemical vapor deposition.

8. A process for fabricating slots in accordance with claim 7 wherein said step of applying a layer of etch resistant material by low pressure chemical vapor deposition comprises the step of applying a layer of silicon nitride by low pressure chemical vapor deposition.

9. A process for fabricating slots in accordance with claim 3 wherein said step of etching said exposed regions in said substrate until said slots are partially formed is accomplished by the step of etching said exposed regions to a depth of less than about one micron.

10. A process for fabricating slots in accordance with any one of claims 3-9 wherein after said step of treating the surface of said partially formed slot the following step is carried out:

etching said partially formed slot to a desired depth.

11. A process for fabricating slots in accordance with claim 10 wherein after said step of etching said partially formed slot to a desired depth the following steps are carried out:

forming an etch resistant coating on the sidewalls of said slot at least adjacent the mouth of said slot; and

etching the as formed slot to an additional desired depth.

12. A process for fabricating slots in accordance with claim 10 wherein after said step of etching said partially formed slot to a desired depth the following steps are carried out:

filling said slot with a material which substantially fills the volume of the slot and conforms to the contours of the slot; and

etching the surface of said wafer to remove excess filler material and expose a planar surface suitable for serving as a foundation for overlying layers.

13. A process for fabricating slots in accordance with claim 12 wherein after said step of etching said surface of said wafer to remove excess filler material the following steps are followed:

applying a layer of passivating material to the surface of said wafer; and

applying a conductive metal layer over portiqns of the surface of said layer of passivating material.