Non-mass-analyzed ion implantation

• US 4,533,831 A
• Filed: 03/21/1983
• Issued: 08/06/1985
• Est. Priority Date: 03/24/1982
• Status: Expired due to Term

• Current Assignee: New Energy Development Organization
• Original Assignee: Hitachi, Ltd.
• Inventors: Saitoh, Tadashi, Warabisako, Terunori, Tokuyama, Takashi, Tokiguchi, Katsumi, Itoh, Haruo
• Primary Examiner(s): Smith, Alfred E.
• Assistant Examiner(s): Hanig, Richard
• Application Number:
  US06/477,375
• Time in Patent Office: 869 Days
• Field of Search: 250/492.2, 250/492.1, 250/492.3, 250/423 R, 250/424, 313/359.1, 313/361.1
• US Class Current: 250/492.2
• CPC Class Codes: H01J 37/3171 for ion implantation
• CPC Class Codes: H01L 21/2236 from or into a plasma phase

Abstract

A non-mass-analyzed ion implantation process wherein two or more species of ions of the same polarity having greatly different ion masses are generated from a compound source material, the ions are accelerated under the application of an electric field, and the accelerated ions are scanned under the application of a magnetic field so as to be implanted into a target at a distribution profile which varies with the species of ions. An ion implantation apparatus can be simplified. A large ion beam current with a large spot size can be used and ions can be implanted to the target at a large dose within a short time. Especially, the non-mass-analyzed ion implantation is advantageously utilized for production of solar batteries.

Claims

1. A non-mass-analyzed ion implantation process using ions generated from a compound without selecting a single ion species, comprising the steps of:

generating ions, which include at least two species of ions of the same polarity, from a compound source material;

accelerating said ions;

scanning said accelerated ions electromagnetically and repetitively in a direction transverse to an acceleration direction; and

implanting beams of said scanned ions, including said at least two species of ions, into a target, with said at least two species of ions being implanted with different distribution profiles of implanted ion doses.

2. A non-mass-analyzed ion implantation process according to claim 1 wherein said ions include at least two species of ions of the same polarity having different ion masses.

3. A non-mass-analyzed ion implantation process according to claim 2 wherein the mass ratio between said at least two species of ions is about 1.6 or more.

4. A non-mass-analyzed ion implantation process according to claim 2 wherein said mass ratio is about 3.9 or more.

5. A non-mass-analyzed ion implantation process according to claim 4 wherein said mass ratio is 25 or more.

6. A non-mass-analyzed ion implantation process according to claim 1 wherein said step of scanning comprises applying a magnetic field which varies periodically in a direction vertical to a travelling direction of the ion beams.

7. A non-mass-analyzed ion implantation process according to claim 1 wherein said compound comprises a hydrogen compound of one of group III and V elements.

8. A non-mass-analyzed ion implantation process according to claim 7 wherein said hydrogen compound comprises one of phosphine and arsine.

9. A non-mass-analyzed ion implantation process according to claim 7 wherein said step of generating ions comprises generating plasma discharge.

10. A non-mass-analyzed ion implantation process according to claim 1 wherein said step of accelerating comprises applying an electric field to said ions to apply said ions of one polarity with acceleration energy of the order of at least KeV.

11. A non-mass-analyzed ion implantation process according to claim 1 wherein said target is moved in a direction substantially vertical to the direction of scanning.

12. A non-mass-analyzed ion implantation process according to claim 2 wherein said compound comprises a hydrogen compound of one of group III and V elements, said at least two species of ions of the same polarity comprise a univalent ion of said one element and a univalent ion of hydrogen, and said target is placed within a range over which said univalent ion of said one element is scanned.

13. A non-mass-analyzed ion implantation process according to claim 1 wherein said scanning is performed to provide superposed and different scanning spans for said at least two species of ions.

14. A non-mass-analyzed ion implantation process according to claim 13 wherein said superposed and different scanning spans have a common central point.

15. A non-mass-analyzed ion implantation process according to claim 1 wherein, in said implanting, the at least two species of ions are implanted with superposed and different distribution profiles of implanted ion doses.

16. A non-mass-analyzed ion implantation process according to claim 1 wherein the ions are generated using a microwave ion source.

17. A method of producing a semiconductor device wherein one conductivity affording impurity is doped into a semiconductor substrate by non-mass-analyzed ion implantation, a discharge gas of a hydrogen compound of the impurity is used to generate ion beams which include at least H⁺ ion and ion of said impurity, and the generated ion beams including at least H⁺ ion and ion of said impurity are scanned by a magnetic field to cause superposed and different scanning spans for the H⁺ ion and ion of said impurity and reduce the dose of H⁺ relative to the dose of ion of the impurity.

18. A method of producing a semiconductor device according to claim 17 wherein said one conductivity impurity comprises one of As and P, and said discharge gas contains one of AsH₃ and PH₃.

19. A method of producing a semiconductor device according to claim 18 wherein the impurity is P and the discharge gas is PH₃, and the generated ion beams are scanned such that when the total dose of P is 1×

10¹⁵ to 3×

10¹⁶ cm^-2, the total dose of H⁺ ion is 1×

10¹⁵ cm^-2 or less.