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Single wafer plasma etch reactor

  • US 4,534,816 A
  • Filed: 06/22/1984
  • Issued: 08/13/1985
  • Est. Priority Date: 06/22/1984
  • Status: Expired due to Term
First Claim
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1. Apparatus for plasma etching a semiconductor wafer comprising:

  • a fluid cooled lower electrode for supporting said wafer;

    a fluid cooled upper electrode substantially parallel to and spaced apart from said lower electrode a distance such that the aspect ratio is greater than about 25, said upper electrode including means for distributing a reactive gas uniformly over said wafer;

    means for coupling RF power to one or both of said electrodes; and

    means for confining a plasma between said upper and lower electrodes.

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