Single wafer plasma etch reactor

• US 4,534,816 A
• Filed: 06/22/1984
• Issued: 08/13/1985
• Est. Priority Date: 06/22/1984
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Chen, Lee, Hendricks, Charles J., Mathad, Gangadhara S., Poloncic, Stanley J.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/623,670
• Time in Patent Office: 417 Days
• Field of Search: 156/345, 156/643, 156/646, 204/164, 204/192 E, 204/298, 427/38, 427/39, 118/728, 118/50, 118/620
• US Class Current: 156/345.37
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32532 Electrodes
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

A high pressure, high etch rate single wafer plasma reactor having a fluid cooled upper electrode including a plurality of small diameter holes or passages therethrough to provide uniform reactive gas distribution over the surface of a wafer to be etched. A fluid cooled lower electrode is spaced from the upper electrode to provide an aspect ratio (wafer diameter: spacing) greater than about 25, and includes an insulating ring at its upper surface. The insulating ring protrudes above the exposed surface of the lower electrode to control the electrode spacing and to provide a plasma confinement region whereby substantially all of the RF power is dissipated by the wafer. A plurality of spaced apart, radially extending passages through the insulating ring provide a means of uniformly exhausting the reactive gas from the plasma confinement region. Affixed to the upper electrode is a first housing which supplies reactive gas and cooling fluid, and a baffle affixed to the first housing intermediate the upper electrode and a gas inlet forms a plenum above the upper electrode and ensures uniform reactive gas distribution thereover. The first housing and upper electrode are contained within a second housing with an insulating housing therebetween. The upper and lower electrodes are electrically isolated from each other and from ground, so that either or both electrodes may be powered.

Claims

1. Apparatus for plasma etching a semiconductor wafer comprising:

a fluid cooled lower electrode for supporting said wafer;

a fluid cooled upper electrode substantially parallel to and spaced apart from said lower electrode a distance such that the aspect ratio is greater than about 25, said upper electrode including means for distributing a reactive gas uniformly over said wafer;

means for coupling RF power to one or both of said electrodes; and

means for confining a plasma between said upper and lower electrodes.

2. The apparatus of claim 1 wherein said plasma confining means comprises:

an insulating ring surrounding a raised portion of said lower electrode, said insulating ring having an upper portion extending above the upper surface of said lower electrode, and a channel formed into its inner surface such that the inner surface of said insulating ring is horizontally and vertically spaced apart from the upper exposed surface of said lower electrode, the upper portion of said insulating ring further including a plurality of radially extending passages therethrough for exhausting said reactive gas, wherein the inner surface of said insulating ring and the facing surfaces of said upper and lower electrodes form a plasma confinement region.

3. The apparatus of claim 2, further comprising:

a first housing affixed to said upper electrode to form a plenum thereabove for said reactive gas, said first housing including a first passageway therethrough for communicating said reactive gas to said plenum and a plurality of second passageways therein for communicating a cooling fluid to and from said upper electrode;

a second housing surrounding and spaced apart from said first housing, said second housing including reactive gas exhaust means; and

an insulating housing intermediate said first and second housings to electrically isolate said first housing from said second housing, the outer surface of said insulating housing being spaced apart from said second housing to provide a passageway for said reactive gas from said insulating ring passageways to said second housing gas exhaust means.

4. The apparatus of claim 3, further comprising:

baffle means affixed to said first housing in said plenum above said upper electrode to uniformly distribute said reactive gas to said upper electrode.

5. The apparatus of claim 1 wherein said upper electrode reactive gas distributing means comprises a plurality of vertical passageways therethrough, the width of each of said passageways decreasing from the upper surface to the lower surface of said upper electrode, and wherein said upper electrode includes an internal cooling passage to uniformly distribute a cooling fluid therethrough.

6. The apparatus of claim 1 wherein said lower electrode includes an internal cooling passage to uniformly distribute a cooling fluid therethrough, and an insulated lower portion to electrically isolate said lower electrode.

7. Apparatus for plasma etching a semiconductor wafer comprising:

a fluid cooled lower electrode for supporting said wafer;

a fluid cooled upper electrode substantially parallel to and spaced apart from said lower electrode, said upper electrode including means for distributing a reactive gas uniformly over said wafer;

means for coupling RF power to one or both of said electrodes; and

an insulating ring surrounding a raised portion of said lower electrode, said insulating ring having an upper portion extending above the upper surface of said lower electrode, and a channel formed into its inner surface such that the inner surface of said insulating ring is horizontally and vertically spaced apart from the upper exposed surface of said lower electrode, the upper portion of said insulating ring further including a plurality of radially extending passages therethrough for exhausting said reactive gas, wherein the inner surface of said insulating ring and the facing surfaces of said upper and lower electrodes form a plasma confinement region.

8. The apparatus of claim 7 wherein said upper electrode reactive gas distributing means comprises a plurality of vertical passageways therethrough, the width of each of said passageways decreasing from the upper surface to the lower surface of said upper electrode, and wherein said upper electrode includes an internal cooling passage to uniformly distribute a cooling fluid therethrough.

9. The apparatus of claim 8 wherein said lower electrode includes an internal cooling passage to uniformly distribute a cooling fluid therethrough, and an insulated lower portion to electrically isolate said lower electrode.

10. The apparatus of claim 9, further comprising:

a first housing affixed to said upper electrode to form a plenum thereabove for said reactive gas, said first housing including a first passageway therethrough for communicating said reactive gas to said plenum and a plurality of second passageways therein for communicating a cooling fluid to and from said upper electrode;

a second housing surrounding and spaced apart from said first housing, said second housing including reactive gas exhaust means; and

an insulating housing intermediate said first and second housings to electrically isolate said first housing from said second housing, the outer surface of said insulating housing being spaced apart from said second housing to provide a passageway for said reactive gas from said insulating ring passageways to said second housing gas exhaust means.

11. The apparatus of claim 10, further comprising:

baffle means affixed to said first housing in said plenum above said upper electrode to uniformly distribute said reactive gas to said upper electrode.

12. Apparatus for plasma etching a semiconductor wafer comprising:

a lower electrode for supporting said wafer, said lower electrode having an insulated lower portion and an internal cooling passage to uniformly distribute a cooling fluid therethrough;

an upper electrode substantially parallel to and spaced apart from said lower electrode, said upper electrode having an internal cooling passage to uniformly distribute a cooling fluid therethrough and a plurality of vertical passageways therethrough for distributing a reactive gas uniformly over said wafer, wherein the width of each of said vertical passageways decreases from the upper surface to the lower surface of said upper electrode;

means for coupling RF power to one or both of said electrodes; and

an insulating ring surrounding a raised portion of said lower electrode, said insulating ring having an upper portion extending above the upper surface of said lower electrode, and a channel formed into its inner surface such that the inner surface of said insulating ring is horizontally and vertically spaced apart from the upper exposed surface of said lower electrode, the upper portion of said insulating ring further including a plurality of radially extending passages therethrough for exhausting said reactive gas, wherein the inner surface of said insulating ring and the facing surfaces of said upper and lower electrodes form a plasma confinement region.

13. The apparatus of claim 12, further comprising:

a first housing affixed to said upper electrode to form a plenum above said upper electrode for said reactive gas, said first housing including a first passageway therethrough for communicating said reactive gas to said plenum and a plurality of second passageways therein for communicating a cooling fluid to and from said upper electrode;

a second housing surrounding and spaced apart from said first housing, said second housing including reactive gas exhaust means; and

an insulating housing intermediate said first and second housings to electrically isolate said first housing from said second housing, the outer surface of said insulating housing being spaced apart from said second housing to provide a passageway for said reactive gas from said insulating ring passageways to said second housing gas exhaust means.

14. The apparatus of claim 13, further comprising:

baffle means affixed to said first housing in said plenum above said upper electrode to uniformly distribute said reactive gas to said upper electrode.