Interfacial blister bonding for microinterconnections

• US 4,535,219 A
• Filed: 10/12/1982
• Issued: 08/13/1985
• Est. Priority Date: 10/12/1982
• Status: Expired due to Fees

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Sliwa, John W. Jr.
• Primary Examiner(s): Albritton, C. L.
• Application Number:
  US06/433,577
• Time in Patent Office: 1,036 Days
• Field of Search: 219/121 L, 219/121 LM, 219/121 LC, 219/121 LD, 219/121 EC, 219/121 ED, 219/121 PJ, 219/121 PK, 228/179, 29/830, 29/840, 361/400, 361/403, 361/421, 361/398
• US Class Current: 219/121.63
• CPC Class Codes: B23K 26/206 Laser sealing
• CPC Class Codes: B23K 26/244 Overlap seam welding
• CPC Class Codes: H01L 2224/13111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/81136 involving guiding structures, e.g. spacers or supporting members
• CPC Class Codes: H01L 2224/81138 the guiding structures being at least partially left in the finished device
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 24/80 Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
• CPC Class Codes: H01L 24/81 using a bump connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01024 Chromium [Cr]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01049 Indium [In]
• CPC Class Codes: H01L 2924/0105 Tin [Sn]
• CPC Class Codes: H01L 2924/0106 Neodymium [Nd]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/10336 : Aluminium gallium arsenide [AlGaAs]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: Y10T 29/49144 : by metal fusion

Abstract

A method for producing microinterconnections including the steps of providing a first support member bearing electrical circuit elements including first electrical contacts and first electrical traces, providing a second support member bearing electrical circuit elements including second electrical contacts and second electrical traces, placing the second support member in face-to-face spaced and aligned relationship with respect to the first support member, and applying energy to the first support member for moving portions thereof underlying ones of the first contacts toward and into intimacy with aligned ones of the second contacts.

Claims

1. A method for producing microinterconnections characterized by including the following steps,

providing a first support member bearing electrical circuit elements including first electrical contact means and first electrical trace means,

providing a second support member bearing electrical circuit elements including second electrical contact means and second electrical trace means,

placing said second support member in face-to-face spaced relationship with respect to said first support member,

aligning said second contact means with said first contact means, and

applying energy to said first support member for moving portions of said first support member, bearing ones of said first contact means, toward and into intimacy with aligned ones of said second contact means, and for heating said ones of said first contact means to bond aligned ones of said first and second electrical contact means.

2. The method for producing microinterconnections as defined in claim 1 characterized in that said step of applying energy is effected by directing laser illumination at predetermined ones of said first contact means.

3. The method for producing microinterconnections as defined in claim 1 characterized by applying energy in a blanket manner for moving said first contact means.

4. The method for producing microinterconnections as defined in claim 3 characterized in that said step of applying energy is effected by conductive heating.

5. The method of producing microinterconnections as defined in claim 3 characterized in that said step of applying energy is effected by convective heating.

6. The method for producing microinterconnections as defined in claim 3 characterized in that said step of applying energy is effected by radiant heating.

7. The method for producing microinterconnections as defined in claim 1 characterized in that said step of applying energy moves portions of said first electrical trace means away from said first support member.

12. The support member for microinterconnections as defined in claim 7 characterized in that said propellant layer will generate a gas in response to the application of energy thereto.

8. A support member for microinterconnections characterized by including

substrate means,

electrical circuit means supported upon said substrate means, said circuit means including movable electrical contact means connected to and interconnected by electrical trace means, and

selectively deformable means positioned intermediate said substrate and said electrical circuit means, whereby portions of said electrical circuit means may be selectively moved away from said substrate means in response to the application of energy to said selectively deformable means.

9. The support member for microinterconnections as defined in claim 8 characterized in that said selectively deformable means includes a propellant layer.

10. The support member for microinterconnections as defined in claim 9 characterized in that said propellant layer is patterned.

11. The support member for microinterconnections as defined in claim 9 characterized in that said propellant layer will expand in response to the application of energy thereto.

13. The support member for microinterconnections as defined in claim 8 characterized in that said selectively deformable means includes a propellant layer and an additional energy absorbing layer.

14. The support member for microinterconnections as defined in claim 8 characterized in that said selectively deformable means includes a propellant layer sandwiched between a reflector layer and a thermally insulating layer, wherein the insulating layer is adjacent said substrate.

15. The support member for microinterconnections as defined in claim 8 characterized in that said selectively deformable means includes a propellant layer and an overlying diaphragm layer.

16. The support member for microinterconnections as defined in claim 8 characterized in that said substrate means is optically transparent so that laser energy will pass therethrough into said selectively deformable means.

17. The support member for microinterconnections as defined in claim 8 characterized by including a masking layer interposed between said substrate means and said selectively deformable means, said masking layer having openings therein adjacent those portions of said electrical circuit means which are desired to be moved away from said substrate means in response to the application of energy to said deformable means in a pattern determined by said mask.

18. The support member for microinterconnections as defined in claim 8 characterized by including solder means overlying said movable electrical contact means.

19. The support member for microinterconnections as defined in claim 8 characterized in that said electrical trace means includes stress relieving means adjacent said movable electrical contact means.

20. The support member for microinterconnections as defined in claim 8 characterized by including spacer means supported upon said substrate means, said spacer means being provided for locating a mating microinterconnection member.