Vapor phase growth method

• US 4,539,068 A
• Filed: 08/27/1982
• Issued: 09/03/1985
• Est. Priority Date: 09/20/1979
• Status: Expired due to Term

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Koyama, Kenji, Takagi, Mikio, Takasaki, Kanetake
• Primary Examiner(s): Bernstein, Hiram H.
• Application Number:
  US06/412,260
• Time in Patent Office: 1,103 Days
• Field of Search: 156/614, 156/613, 156/DIG. 64, 156/DIG. 99, 423/349, 148/175, 427/34, 427/39, 427/86, 427/94, 427/93, 427/95, 427/248.1, 427/255.2, 427/87, 204/192 S, 204/177, 204/164
• US Class Current: 427/570
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus

Abstract

A plasma chemical vapor deposition method for forming a film on a substrate which is placed on one of a pair of electrodes oppositely arranged within the reaction chamber of a reactor. A plurality of power generators of different frequencies are applied to the electrodes to excite reactive gases introduced into the reaction chamber, whereby the reactive gases are transformed into a plasma and a desired film is formed on the substrate. Film with a small number of pinholes was formed at a relatively high deposition rate by combinations of power generator frequencies of, for example, 13.56 MHz and 1 MHz, 13.56 MHz and 50 KHz, and 5 MHz and 400 KHz.

Claims

1. A method of plasma chemical vapor deposition for forming a film on a substrate, comprising the steps of:

disposing the substrate in a reaction chamber having a pair of electrodes;

introducing reactive gases into the reaction chamber; and

simultaneously applying a plurality of electric power sources of different frequencies to the pair of electrodes to excite the reactive gases which are transformed into a plasma, the plurality of electric power sources of different frequencies including a first electric power source having a first frequency and a second electric power source having a second frequency, the first frequency providing a high deposition rate relative to the second frequency, the second frequency producing a reduced number of pinholes in the film relative to the first frequency; and

depositing the film, having the reduced number of pinholes, on the substrate from the plasma generated by simultaneously applying the plurality of electric sources of different frequencies.

2. The method as set forth in claim 1, wherein the first electric power source comprises a high frequency power source having a frequency higher than 5 MHz and wherein the second electric power source comprises a low frequency power source having a frequency below 1 MHz.

3. The method as set forth in claim 2, wherein the electric power applying step comprises mixing the outputs of the plurality of electric power sources and applying the mixed power to the pair of electrodes, the power ratio of the high frequency power source to the total power applied being on the order of 8.3 to 33.3%.