Semiconductor integrated circuit

• US 4,539,660 A
• Filed: 12/16/1981
• Issued: 09/03/1985
• Est. Priority Date: 12/26/1980
• Status: Expired due to Term

• Current Assignee: Hitachi Maxell Limited (Maxell, Ltd.)
• Original Assignee: Hitachi, Ltd., Hitachi Maxell Limited (Maxell, Ltd.)
• Inventors: Kudo, Tetsuichi, Masuhara, Toshiaki, Minato, Osamu, Miyauchi, Katsuki, Uetani, Yoshio
• Primary Examiner(s): RICHARDSON, ROBERT
• Application Number:
  US06/331,278
• Time in Patent Office: 1,357 Days
• Field of Search: 365/226, 365/227, 365/228, 365/229, 357/74 C, 357/75
• US Class Current: 365/229
• CPC Class Codes: G06F 1/00 Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00 architectures of general purpose stored program computers G06F15/76
• CPC Class Codes: G11C 5/141 Battery and back-up supplies
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 23/49593 Battery in combination with a leadframe
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01M 10/0562 Solid materials
• CPC Class Codes: Y02E 60/10 Energy storage using batteries

Abstract

A nonvolatile memory in which at least one power supply element is carried with an integrated circuit chip containing the memory and connected to power supply terminals of the integrated circuit chip having a memory cell array in which a plurality of memory elements or memory circuits are arrayed.

Claims

1. A semiconductor integrated circuit comprising an integrated circuit chip including a memory part in which a plurality memory elements or memory circuits are arrayed, and at least one power supply element carried with said integrated circuit chip and connected to power supply terminals of said integrated circuit chip.

2. A semiconductor memory according to claim 1, wherein said power supply element is a battery.

3. A semiconductor memory according to claim 2, wherein said power supply element is a fully solid-state battery.

4. A semiconductor memory according to claim 3, wherein said power supply element is a fully solid-state secondary battery.

5. A semiconductor memory according to claim 4, wherein said power supply element is a solid-state lithium battery.

6. A semiconductor memory according to claim 2, wherein said power supply element is a battery having already been sealed, and wherein said battery is stacked on said integrated circuit and has its electrodes connected to said power supply terminals of said integrated circuit chip.

7. A semiconductor memory according to claim 6, wherein said integrated circuit chip is placed in a package having an outer socket, and said electrodes of said battery and said power supply terminals of said integrated circuit chip are connected by inserting electrode leads of said battery into said outer socket.

8. A semiconductor memory according to claim 2, wherein said power supply element is a solar battery.

9. A semiconductor memory according to claim 1, wherein said power supply element is a capacitor.

10. A semiconductor memory according to claim 9, wherein said capacitor is a solid electrolyte capacitor.

11. A semiconductor memory according to claim 1, 2 or 9, wherein said memory part disposed in said integrated circuit chip constitutes a random access memory.

12. A semiconductor memory according to claim 1, 2 or 9, wherein said memory part disposed in said integrated chip constitutes a content addressable memory.

13. A semiconductor memory according to claim 1, 2 or 9, wherein said memory part disposed in said integrated chip constitutes a serial memory.

14. A semiconductor memory according to claim 1, 2 or 9, wherein said memory part disposed in said integrated chip constitutes an analogue memory.

15. A semiconductor integrated circuit comprising an integrated circuit chip including a memory part in which a plurality of memory elements or memory circuits are arrayed, and at least one fully solid-state battery connected to power supply terminals of said integrated circuit chip wherein said solid-state battery is a lithium battery, the solid electrolyte substance of which is at least one selected from the group consisting of a Li₄ SiO₄ --Li₃ PO₄ compound, a Li₃ N--LiI compound and an Li₃ N--LiI--LiOH compound.

16. A semiconductor memory according to claim 15, wherein said solid-state lithium battery comprises a first electrode layer disposed on said integrated circuit chip through an insulating film, a layer of said solid electrolyte substance disposed on said first electrode layer, and a second electrode layer disposed on the solid electrolyte substance layer, and wherein said first electrode layer and said second electrode layer are respectively connected to the first and second power supply terminals of the semiconductor integrated circuit chip.

17. A semiconductor integrated circuit comprising an integrated circuit chip including a memory part in which a plurality of memory elements are configured in an array which is connected to power supply terminals to which is connected a biasing potential for maintaining a desired binary data state written within each of said individual elements and a power supply formed integrally within said integrated circuit and having different reference potentials connected respectively to different terminals for providing said biasing potential when said terminals are disconnected from an external power source, said power supply element being formed from multiple layers disposed in proximity to the plurality of memory elements with a pair of said layers being individually connected to different terminals and said integrated circuit being covered with a passivation layer to seal said memory elements and said multiple layers.

18. A semiconductor memory according to claim 17, wherein said power supply element is a solid-state secondary battery.

19. A semiconductor memory according to claim 18, wherein said solid-state secondary battery is a lithium battery.

20. A semiconductor memory according to claim 17, wherein said power supply element is a solar cell.

21. A semiconductor integrated circuit comprising an integrated circuit chip including a memory part in which a plurality of memory elements are configured in an array which is connected to power supply terminals to which is connected a biasing potential for maintaining a desired binary state written within each of said elements and a power supply bonded directly to said integrated circuit chip having a pair of terminals respectively connected to said different power supply terminals for providing said biasing potential when said power supply terminals are disconnected from an external power supply.

22. A semiconductor integrated circuit comprising an integrated circuit chip including a memory part in which a plurality of memory elements are configured in an array which is connected to power supply terminals to which is connected a biasing potential for maintaining a desired binary data state written within each of said individual elements, a pair of sockets for respectively electrically connecting to said power supply terminals for permitting the external connection of a secondary power source to said terminals, and a battery having a pair of leads, connected to different reference potentials within said battery, which engages said sockets for providing said biasing potential when said terminals are disconnected from an external power source used for general operation of the integrated circuit chip.