Apparatus for molecular beam epitaxy

• US 4,542,712 A
• Filed: 06/22/1984
• Issued: 09/24/1985
• Est. Priority Date: 06/24/1983
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Kato, Shigeo, Sato, Kazuo, Tamura, Naoyuki, Yamaguchi, Sumio, Okuno, Sumio, Mizumoto, Muneo, Matsumura, Yasuhide
• Primary Examiner(s): NOT, DEFINED
• Assistant Examiner(s): Plantz, Bernard F.
• Application Number:
  US06/623,370
• Time in Patent Office: 459 Days
• Field of Search: 118/726, 118/729, 118/730, 118/719, 118/733, 118/500, 118/731, 156/DIG. 103, 156/614, 422/245, 422/247, 414/217, 414/221, 414/222, 414/225
• US Class Current: 118/726
• CPC Class Codes: C30B 23/02 Epitaxial-layer growth
• CPC Class Codes: C30B 35/005 Transport systems
• CPC Class Codes: Y10S 414/137 including means for charging or discharging wafer cassette
• CPC Class Codes: Y10S 414/139 including wafer charging or discharging means for vacuum chamber

Abstract

An apparatus for molecular beam epitaxy according to the present invention is so constructed that a substrate is introduced into a vacuum vessel with a substrate surface for epitaxial growth facing in the direction of gravity, and that the substrate is conveyed to and transferred into vacuum chambers for performing processes necessary for the epitaxial growth, with the substrate surface maintained in the direction of gravity and without directly touching the substrate surface.

Claims

1. An apparatus for molecular beam epitaxy comprising means to introduce a substrate into said apparatus with a substrate surface for epitaxial growth facing in a gravitational direction, processing chamber means to perform processes necessary for the epitaxial growth of the substrate surface by a molecular beam in ultrahigh vacuum, means capable of conveying the introduced substrate into said processing chamber means in the state in which the substrate surface is maintained in the gravitational direction, and means capable of transferring the introduced substrate to the conveyance means and transferring it between said conveyance means and said processing chamber means in the state in which the substrate surface is maintained in the gravitational direction, a thin film crystal being grown on the substrate surface by the molecular beam epitaxy, and means for rearranging the substrate surface of the substrate conveyed into said processing chamber means in a substantially vertical direction and setting the substrate surface toward an irradiation position of the molecular beam.

2. An apparatus for molecular beam epitaxy as defined in claim 1, wherein the introduction means is constructed so as to introduce a plurality of substrates from within the atmosphere into said apparatus collectively and simultaneously, and wherein said transferring means and said conveying means successively transfer and convey said substrates one by one from said introduction means into said processing chamber means.