Electrochemical photocatalytic structure

• US 4,544,470 A
• Filed: 05/31/1984
• Issued: 10/01/1985
• Est. Priority Date: 05/31/1984
• Status: Expired due to Fees

• Current Assignee: Ford Motor Company
• Original Assignee: Ford Motor Company
• Inventors: Hetrick, Robert E.
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/615,990
• Time in Patent Office: 488 Days
• Field of Search: 204/78, 204/79, 204/128, 204/129, 204/157.1 R, 204/158 R, 204/242, 204/248, 204/275, 204/278, 204/DIG. 3, 429/111
• US Class Current: 204/248
• CPC Class Codes: B01J 35/33 Electric or magnetic properties
• CPC Class Codes: C25B 1/55 Photoelectrolysis
• CPC Class Codes: Y02P 20/133 Renewable energy sources, e.g. sunlight
• CPC Class Codes: Y10S 204/03 Auxiliary internally generated electrical energy

Abstract

A planar photoelectrochemical structure includes a thin, porous layer of semiconductor powder material on a catalytic film. Using incident light absorbed by the semiconductor, the structure is suited to photosensitizing redox reactions of substrates introduced to the structure in an aqueous gas-phase environment. Conducting catalyst films allow significant external electrical interaction with the photoelectrochemical process occurring in the layer.

Claims

1. An electrochemical photocatalytic structure for photosensitizing chemical reduction-oxidation reactions including:

a substrate means for providing physical support for said structure;

a film of catalyst material deposited on said substrate means;

a porous layer of semiconductor powder adjacent said catalyst material, and adapted for photoactivity wherein said semiconductor powder layer has a porosity of about 50% to about 75% and has a grain size less than about 1 micrometer to 0.02 micrometer, at least some of said semiconductor powder grains are in contact with said film of catalyst material, and at least a portion of said film of catalyst material is uncovered by said semiconductor powder grains so as to be exposed for electrochemical reaction; and

said semiconductor powder including spaced grains of semiconductor material to provide a pore volume so as to pass a chemical reactant which is subjected to a photochemical reduction-oxidation reaction when said structure is illuminated with light having a wavelength with an energy above the electron bandgap energy of said semiconductor material so that both electron and hole carriers are created in said layer of semiconductor powder.

2. An electrochemical photocatalytic structure as recited in claim 1 further including:

an electrolyte material added to said porous layer of semiconductor powder so that said pore volume becomes ionically conducting in the presence of an appropriate chemical reactant.

3. An electrochemical photocatalytic structure as recited in claim 2 wherein:

said grains of semiconductor material are an n-type semiconductor material with a surface adapted to promote an oxidation half reaction of the chemical reactant adjacent said grains of semiconductor material; and

said film of catalyst material is adapted to promote a reduction half reaction of the chemical reactant adjacent said catalyst material.

4. An electrochemical photocatalytic structure as recited in claim 3 where said semiconductor powder layer is n-type TiO₂, said catalyst material film is platinum, said electrolyte in the pore volume is an alkali hydroxide, and said chemical reactant is water so that upon illumination, the water is converted into H₂ and O₂.

5. A structure as recited in claim 3 wherein said semiconductor powder layer portion is n-type TiO₂, said reactant is formic acid, said electrolyte is sodium formate and said catalyst material film is platinum.

6. An electrochemical photocatalytic structure as recited in claim 2 wherein:

said grains of semiconductor material are a p-type semiconductor with a surface adapted to promote a reduction half reaction of the chemical reactant adjacent said grains of semiconductor material; and

said film of catalyst material is adapted to promote an oxidation half reaction of the chemical reactant adjacent said catalyst material.

7. An electrochemical photocatalytic structure as recited in claim 2 wherein the thickness of said semiconductor powder layer is in the range of about 1μ

to 20μ

.