Metal-silicide deposition using plasma-enhanced chemical vapor deposition

• US 4,557,943 A
• Filed: 10/31/1983
• Issued: 12/10/1985
• Est. Priority Date: 10/31/1983
• Status: Expired due to Fees

• Current Assignee: ASM America Incorporated (ASM International NV)
• Original Assignee: Advanced Semiconductor Materials America Incorporated
• Inventors: Engle, George M., Rosler, Richard S.
• Primary Examiner(s): Childs, Sadie L.
• Application Number:
  US06/547,050
• Time in Patent Office: 771 Days
• Field of Search: 427/38, 427/96, 427/99, 427/95, 427/126.1, 427/255.2, 427/255.7, 427/419.7, 427/376.2
• US Class Current: 427/574
• CPC Class Codes: C23C 16/42 Silicides
• CPC Class Codes: H01L 21/28061 the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction H01L21/28052 takes precedence
• CPC Class Codes: H01L 21/28518 the conductive layers comprising silicides H01L21/28537 takes precedence

Abstract

A method for deposition of thin conductive layers of low resistivity titanium silicide. The method comprises the co-deposition of titanium and silicon by plasma-enhanced chemical vapor deposition at a low temperature. An anneal above the deposition temperature reduces the layer resistivity, making the layer especially suitable for microelectronic applications.

Claims

1. A method for the chemical vapor deposition of a low-resistivity composite layer comprising titanium silicide on a substrate by low-pressure plasma-enhanced vapor deposition, comprising the steps of:

depositing a thin layer of silicon on said substrate;

depositing a layer of titanium silicide on said thin layer of silicon by reacting a gaseous silicon species and a gaseous titanium species in a low-pressure plasma; and

depositing another layer of silicon on said layer of titanium silicide.

2. The method of claim 1, where said gaseous silicon species comprises silane and said gaseous titanium species comprises titanium tetrachloride.

3. The method of claim 1, further including annealing said composite conductive layer at a temperature higher than the temperature at which said deposition steps are effected.

4. The method of claim 3 wherein said annealing is at a temperature of about 600°

to about 700°

C.