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Metal-silicide deposition using plasma-enhanced chemical vapor deposition

  • US 4,557,943 A
  • Filed: 10/31/1983
  • Issued: 12/10/1985
  • Est. Priority Date: 10/31/1983
  • Status: Expired due to Fees
First Claim
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1. A method for the chemical vapor deposition of a low-resistivity composite layer comprising titanium silicide on a substrate by low-pressure plasma-enhanced vapor deposition, comprising the steps of:

  • depositing a thin layer of silicon on said substrate;

    depositing a layer of titanium silicide on said thin layer of silicon by reacting a gaseous silicon species and a gaseous titanium species in a low-pressure plasma; and

    depositing another layer of silicon on said layer of titanium silicide.

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