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Pressure transducer using integrated circuit elements

  • US 4,558,238 A
  • Filed: 09/29/1983
  • Issued: 12/10/1985
  • Est. Priority Date: 10/01/1982
  • Status: Expired due to Term
First Claim
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1. A pressure transducer comprising:

  • a semiconductor substrate;

    a pressure sensor including a bridge connection of gauging resistors formed on said semiconductor substrate; and

    a power supply connected to said pressure sensor for driving said pressure sensor, said power supply basically acting as a condtant current source and including at least two transistors formed on said semiconductor substrate, whereinone of said transistors provides a collector current which is less in temperature dependency relative to that of the other transistor and, the other transistor has a collector circuit connected to said pressure sensor and providing a collector current corresponding to a sum of a substantially temperature-dependent current and a substantially temperature-independent current, anda ratio of said temperature-dependent current to said temperature-independent current is adjusted by selecting operation characteristics of said two transistors such that a temperature characteristic of the collector current of said other transistor is substantially inversely proportional to a temperature characteristic of said pressure sensor when said pressure sensor is driven with a constant voltage.

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