Thermoelectric infrared detector array

• US 4,558,342 A
• Filed: 05/31/1983
• Issued: 12/10/1985
• Est. Priority Date: 05/31/1983
• Status: Expired due to Fees

• Current Assignee: Rockwell International Corporation
• Original Assignee: Rockwell International Corporation
• Inventors: Sclar, Nathan
• Primary Examiner(s): Sikes, William L.
• Assistant Examiner(s): Epps, Georgia Y.
• Application Number:
  US06/499,658
• Time in Patent Office: 924 Days
• Field of Search: 357/30, 357/28, 357/32, 357/40, 357/45, 250/332, 250/338 SE, 250/370 G, 250/333, 250/338 R, 136/225, 136/224, 136/212, 136/213, 136/230
• US Class Current: 257/460
• CPC Class Codes: G01J 5/12 using thermoelectric elements, e.g. thermocouples
• CPC Class Codes: H10N 10/17 characterised by the structure or configuration of the cell or thermocouple forming the device
• CPC Class Codes: H10N 10/817 the junction being non-separable, e.g. being cemented, sintered or soldered

Abstract

The detecting element of a thermoelectric infrared detector consists of p-n junctions of a thermopile which are located on a thin layer of unsupported silicon dioxide. The silicon dioxide spans an opening which extends through a silicon semiconductor substrate. The reference junctions of the thermopile are located above the silicon substrate. The detecting p-n junctions on the thin silicon dioxide above the opening in the substrate have a low heat capacity and respond rapidly to temperature changes, whereas the reference junctions above the thick substrate have a much higher heat capacity and tend to maintain their ambient temperature. The conduction of heat between the detecting p-n junctions and the reference junctions is limited by the thin insulating layer of silicon dioxide which joins the detecting p-n junctions to the substrate under the reference junctions.

Claims

1. A thermoelectric infrared detector array comprising:

a silicon substrate having an array of holes extending through it from a back side to a front side;

a thin layer approximately 300Å

thick of unsupported silicon dioxide insulator extending over said holes on said front side of said substrate;

p-n junctions of a thermopile on said thin layer over said holes, said thermopile comprising;

a plurality of p-type, line element semiconductors, one end of each p-type semiconductor being located on said insulator over said hole and the other end being located over said substrate;

a plurality of n-type, line element semiconductors, one end of each of n-type semiconductor being located on said insulator over said hole and the other end being located over said substrate;

said one end of said p- and n-type semiconductors being coupled together to form said p-n junctions of said thermopile and said other ends of said p- and n-type semiconductors being coupled together to place said p-n junctions in series;

a second thin layer of insulator covering said plurality of p- and n-type semiconductors;

an infrared absorbing material covering a portion of said second thin layer of insulator over said hole but separated by a space from the edge of said substrate, said line elements having a first width under said absorbing material and a narrower second width in said space between said absorbing material and said substrate;

said detector array including processing integrated circuits on said front side of said substrate, said processing electronics being coupled to the output of each thermopile, whereby the individual output from each detector can be processed to provide a signal output from said array.