Monolithic planar doped barrier subharmonic mixer

• US 4,563,773 A
• Filed: 03/12/1984
• Issued: 01/07/1986
• Est. Priority Date: 03/12/1984
• Status: Expired due to Fees

• Current Assignee: United States Of America As Represented By The Secretary Of The Army (Government of the United States of America)
• Original Assignee: The United States Of America As Represented By The Secretary Of The Army
• Inventors: Malik, Roger J., Dixon, Samuel Jr.
• Primary Examiner(s): Ng, Jin F.
• Application Number:
  US06/588,612
• Time in Patent Office: 666 Days
• Field of Search: 455/325-328, 455/330
• US Class Current: 455/327
• CPC Class Codes: H03D 2200/0017 Intermediate frequency filter
• CPC Class Codes: H03D 9/0641 located in a hollow waveguide

Abstract

A single planar doped barrier diode is grown by the selective deposition of gallium arsenide using molecular beam epitaxy (MBE) in the center of a gallium arsenide dielectric waveguide member mounted on a ground plane. The waveguide member includes two portions which extend in opposite directions and terminating in respective metal to dielectric waveguide transition sections which are coupled to an RF input signal and local oscillator signal, respectively. The planar doped barrier diode operates as an intrinsic subharmonic mixer and accordingly the local oscillator signal has frequency of one half the input signal frequency. An IF output signal is coupled from the mixer diode to a microstrip transmission line formed on an insulating layer fabricated on the ground plane. Dielectric waveguide isolators are additionally included on the dielectric waveguide segments to mutually isolate the input signal and local oscillator signal. A monolithic form of circuit fabrication is thus provided which allows the planar doped barrier mixer circuit to be extremely small and the cost of mass producing such a circuit to be very economical.

Claims

1. A monolithic signal mixer for millimeter wave frequency applications, comprising:

a dielectric transmission line medium including a semi-insulating substrate of a given material located on a conductive ground plane, said dielectric transmission line including first and second transmission line portions extending in opposite directions along said ground plane and an intermediate area of reduced thickness separating said portions;

a monolithic semiconductor signal mixing device including a substrate of said given material integral with and grown on said intermediate area and spaced from the intermediate area ends of said transmission line, said mixing device including conductive means coupling across said area of reduced thickness to respective said intermediate ends of each of said first and second transmission line portions;

an input signal source and a local oscillator signal source being respectively coupled to opposite ends of said transmission line; and

intermediate frequency transmission line means located on said ground plane and being coupled to said mixing device for translating an intermediate frequency signal resulting from the heterodyne action between said input signal and said local oscillator signal.

2. The mixer as defined by claim 1 wherein said monolithic semiconductor mixing device comprises a planar doped barrier semiconductor device grown on said semi-insulating dielectric transmission line at said intermediate area.

3. The signal mixer as defined by claim 2 wherein said planar doped barrier semiconductor device comprises a planar doped barrier diode.

4. The signal mixer as defined by claim 3 wherein said means coupling across said area of reduced thickness includes a pair of beam leads respectively coupling said planar doped barrier diode to said intermediate ends of said first and second transmission line portions for providing optimum impedance match between said diode and said dielectric transmission line.

5. The signal mixer as defined by claim 3 wherein said planar doped barrier diode is grown on said region of reduced thickness by molecular beam epitaxy.

6. The signal mixer as defined by claim 5 wherein the frequency of said local oscillator signal is substantially one half the frequency of said input signal.

7. The signal mixer as defined by claim 5 wherein said dielectric waveguide is comprised of a group III-V compound.

8. The signal mixer as defined by claim 5 wherein said dielectric waveguide is comprised of gallium arsenide.

9. The signal mixer as defined by claim 8 wherein said planar doped barrier diode comprises an n⁺ -i-p⁺ -i-n⁺ epilayered semiconductor structure.

10. The signal mixer as defined by claim 3 and additionally including dielectric waveguide isolator means located on said first and second portions of said dielectric transmission line between the respective intermediate and opposite ends thereof for isolating said input signal and said local oscillator signal to the location of the planar doped barrier diode.

11. The signal mixer as defined by claim 3 and additionally including first and second metal to dielectric waveguide transition means located at said opposite ends of said first and second transmission line portions for coupling said input signal and said local oscillator signal to said dielectric transmission line.

12. The signal mixer as defined by claim 3 wherein said intermediate frequency transmission line means includes microstrip transmission line means extending transversely from said dielectric transmission line and formed on a layer of insulation located on said ground plane and having a connection to said signal mixing device.

13. The signal mixer as defined by claim 12 wherein said microstrip transmission line means is configured to include a low pass filter.