Method for diffusion of impurities
First Claim
1. A method for diffusion of a desired impurity into a semiconductor substrate, wherein said impurity is capable of acting as a donor or acceptor in a semiconductor, which comprises introducing the impurity into a liquid of high volatility in which the impurity is highly soluble, applying the resultant solution to the semiconductor substrate, drying the semiconductor substrate, and exposing the dried semiconductor substrate to an inactive gas plasma at a temperature less than 300°
- C., thereby diffusing the impurity into said semiconductor substrate.
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Abstract
In the particular embodiments of the invention described in the specification, impurities are diffused into a silicon substrate by applying a solution of the impurity to the substrate, drying the substrate and subjecting it to a glow discharge in an inert gas atmosphere at a pressure of 0.2 to 0.7 Torr and a substrate temperature of 300° C. A semiconductor with n-type properties is formed by using phosphoric acid to provide phosphorus as the impurity and a p-type semiconductor is formed by using boric acid to provide boron as the impurity. Impurity depths of less than one μm are obtained using a solution containing 0.01 parts per 1000 by volume of the impurity.
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Citations
18 Claims
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1. A method for diffusion of a desired impurity into a semiconductor substrate, wherein said impurity is capable of acting as a donor or acceptor in a semiconductor, which comprises introducing the impurity into a liquid of high volatility in which the impurity is highly soluble, applying the resultant solution to the semiconductor substrate, drying the semiconductor substrate, and exposing the dried semiconductor substrate to an inactive gas plasma at a temperature less than 300°
- C., thereby diffusing the impurity into said semiconductor substrate.
- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
Specification