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Method for diffusion of impurities

  • US 4,565,588 A
  • Filed: 10/10/1984
  • Issued: 01/21/1986
  • Est. Priority Date: 01/20/1984
  • Status: Expired due to Term
First Claim
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1. A method for diffusion of a desired impurity into a semiconductor substrate, wherein said impurity is capable of acting as a donor or acceptor in a semiconductor, which comprises introducing the impurity into a liquid of high volatility in which the impurity is highly soluble, applying the resultant solution to the semiconductor substrate, drying the semiconductor substrate, and exposing the dried semiconductor substrate to an inactive gas plasma at a temperature less than 300°

  • C., thereby diffusing the impurity into said semiconductor substrate.

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