Boron nitride containing titanium nitride, method of producing the same and composite ceramics produced therefrom
First Claim
1. Boron nitride produced by chemical vapor deposition, said boron nitride containing titanium nitride in an amount of 0.05 to 10 wt. %.
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Abstract
Boron nitride containing titanium nitride in an amount of 0.05 to 10 wt. % which is produced at a relatively low temperature, utilizing a chemical vapor deposition technique. In the deposition process, boron, titanium and nitrogen source gases are introduced into an evacuated reactor together with a carrier and/or diluent gas and contacted with a heated substrate previously mounted in the reactor, whereby boron nitride with titanium nitride is deposited onto the substrate. The deposit thus obtained has a high density, a significantly improved heat-shielding ability, a high degree of anisotropy with respect to thermal diffusivity and a high chemical stability. By using such anisotropic boron nitride with BN ceramics, very useful BN type composite ceramics can be produced.
85 Citations
22 Claims
- 1. Boron nitride produced by chemical vapor deposition, said boron nitride containing titanium nitride in an amount of 0.05 to 10 wt. %.
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11. A method of producing boron nitride containing titanium nitride in an amount of 0.05 to 10 wt. % by a chemical vapor deposition, comprising the steps of:
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(a) mounting a substrate shaped into a desired form in a reactor; (b) evacuating said reactor and heating said substrate to the temperature range of 500°
to 2000°
C.;(c) introducing a boron depositing source gas, a nitrogen depositing source gas, a titanium depositing source gas and carrier and/or diluent gas into said evacuated reactor, and then contacting said source gases with said substrate within the substrate temperature ranging from 500°
to 2000°
C. and at the total internal pressure of said reactor ranging from 0.1 to 770 torr, thereby depositing said boron nitride containing titanium nitride, the ratio of said titanium depositing source gas to said boron depositing source gas being controlled to give a Ti/B atomic ratio of 0.005 to 0.45;(d) continuing to feed said source gases and said carrier and/or diluent gas while degassing to maintain said total internal pressure of said reactor within said pressure range until the desired amount of said boron nitride is deposited onto said substrate; (e) cooling and taking out said substrate; and (f) removing said deposited boron nitride from said substrate. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. Boron nitride type composite ceramics composed of (1) one or more boron nitride ceramic base layers containing titanium nitride in an amount of 0.05 to 10 wt. % which is produced by chemical vapor deposition and (b) one or more BN ceramic surface layers.
Specification