CMOS Structure incorporating vertical IGFETS

• US 4,566,025 A
• Filed: 06/10/1983
• Issued: 01/21/1986
• Est. Priority Date: 06/24/1982
• Status: Expired due to Term

• Current Assignee: Intersil Corporation (Renesas Electronics Corporation)
• Original Assignee: RCA Corporation (General Electric Company)
• Inventors: Jastrzebski, Lubomir L., Ipri, Alfred C.
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): PRENTY, MARK V
• Application Number:
  US06/503,044
• Time in Patent Office: 956 Days
• Field of Search: 357/42, 357/23.4, 357/56, 357/41, 357/55, 357/23.14, 357/59, 357/23 TF, 357/23.7, 357/4, 29/576 B, 29/576 T, 307/279, 307/304, 365/156, 365/181, 365/182, 365/188
• US Class Current: 257/331
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/28 Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268 etching for patterning the electrodes H01L21/311, H01L21/3213; multistep manufacturing processes for data storage electrodes H01L29/4011
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/66666 Vertical transistors H01L29/66712, H01L29/66742 take precedence
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence
• CPC Class Codes: H10B 10/12 comprising a MOSFET load element

Abstract

A CMOS device incorporates a plurality of interconnected vertical IGFETs on a substrate. An insulated gate electrode is located on the substrate surface and a pair of monocrystalline silicon regions extend from the substrate surface such that each of the monocrystalline silicon regions is contiguous with a portion of the insulated gate electrode. One of the monocrystalline regions has a body region of first conductivity type and the other monocrystalline region has a body region of second conductivity type. Both of the body regions are located with respect to the insulated gate electrode such that an inversion channel can selectively be created in one of the body regions by applying a predetermined voltage to the insulated gate electrode.

Claims

1. An integrated circuit device incorporating a plurality of interconnected vertical IGFETs on a bulk silicon substrate, comprising:

an insulated gate electrode disposed on a surface of the substrate;

the substrate including a first substrate portion of second conductivity type and a second substrate portion of first conductivity type disposed at said surface, said first and second substrate portions being electrically isolated from each other;

first and second monocrystalline silicon regions extending, respectively, from said first and second substrate portions, said monocrystalline silicon regions each being contiguous with a part of the insulated gate electrode;

the first monocrystalline silicon region having a body region of first conductivity type, and the second monocrystalline silicon region having a body region of second conductivity type, such that a predetermined voltage applied to the insulated gate electrode selectively creates an inversion channel in one of the body regions, said inversion channel having a length which is perpendicular to the substrate surface;

a second insulated gate electrode disposed on the substrate surface, the second insulated gate electrode being contiguous with the body region of the first monocrystalline silicon region and the body region of the second monocrystalline silicon region;

a source/drain region underlying each body region and of opposite conductivity type thereto; and

first and second source/drain regions overlying each body region, said first and second overlying source/drain regions being isolated from each other and being of opposite conductivity type to the body region thereunder.

3. A device in accordance with claim 1, further comprising:

means for connecting a source of predetermined voltage to the underlying source/drain region of first conductivity type;

means for connecting a source of relatively lower voltage to the underlying source/drain region of second conductivity type;

an input/output terminal, which connects the first source/drain region which overlies the second conductivity type body region to the first source/drain region which overlies the first conductivity type body region to the first insulated gate electrode; and

a second input/output terminal, which connects the second source/drain region which overlies the second conductivity type body region to the second source/drain region which overlies the first conductivity type body region to the second insulated gate electrode.

4. A device in accordance with claim 1, further comprising:

means for connecting a source of predetermined voltage to the underlying source/drain region of first conductivity type;

means for connecting a source of relatively lower voltage to the underlying source/drain region of second conductivity type;

means for connecting the first source/drain region which overlies the second conductivity type body region to the first source/drain region which overlies the first conductivity type body region to the first insulated gate electrode;

means for connecting the second source/drain region which overlies the second conductivity type body region to the second source/drain region which overlies the first conductivity type body region to the second insulated gate electrode; and

first and second access transistors disposed, respectively, on the first and second source/drain regions which overlie a particular body region.

5. A device in accordance with claim 4, wherein:

the first and second access transistors are vertical IGFETs and are controlled by a common insulated gate electrode.

6. A device in accordance with claim 5, wherein:

the first and second source/drain regions which overlie a particular body region are isolated from each other by an isolation layer; and

said common insulated gate electrode is disposed on said isolation layer.

11. A device in accordance with claim 1, wherein the insulated gate electrode comprises:

an electrode of doped polycrystalline silicon which is substantially surrounded by insulation.

2. An integrated circuit device incorporating a plurality of interconnected vertical IGFETs on a substrate, comprising:

an insulating wafer having a major surface on which first and second monocrystalline substrate portions are disposed, said monocrystalline substrate portions being separated from each other by an isolation oxide which is disposed on the major surface of said insulating wafer, and being substantially coplanar with said isolation oxide so as to yield a substrate surface;

an insulated gate electrode disposed on the substrate surface;

first and second monocrystalline silicon regions extending, respectively, from the first and second substrate portions, said monocrystalline silicon regions each being contiguous with a part of the insulated gate electrode;

the first monocrystalline silicon region having a body region of first conductivity type, and the second monocrystalline silicon region having a body region of second conductivity type, such that a predetermined voltage applied to the insulated gate electrode selectively creates an inversion channel in one of the body regions, said inversion channel having a length which is perpendicular to the substrate surface;

a second insulated gate electrode disposed on the substrate surface, the second insulated gate electrode being contiguous with the body region of the first monocrystalline silicon region and the body region of the second monocrystalline silicon region;

a source/drain region underlying each body region and of opposite conductivity type thereto; and

first and second source/drain regions overlying each body region, said first and second overlying source/drain regions being isolated from each other and being of opposite conductivity type to the body region thereunder.

7. A device in accordance with claim 2, further comprising:

means for connecting a source of predetermined voltage to the underlying source/drain region of first conductivity type;

means for connecting a source of relatively lower voltage to the underlying source/drain region of second conductivity type;

an input/output terminal, which connects the first source/drain region which overlies the second conductivity type body region to the first source/drain region which overlies the first conductivity type body region to the first insulated gate electrode; and

a second input/output terminal, which connects the second source/drain region which overlies the second conductivity type body region to the second source/drain region which overlies the first conductivity type body region to the second insulated gate electrode.

8. A device in accordance with claim 2, further comprising:

means for connecting a source of predetermined voltage to the underlying source/drain region of first conductivity type;

means for connecting a source of relatively lower voltage to the underlying source/drain region of second conductivity type;

means for connecting the first source/drain region which overlies the second conductivity type body region to the first source/drain region which overlies the first conductivity type body region to the first insulated gate electrode;

means for connecting the second source/drain region which overlies the second conductivity type body region to the second source/drain region which overlies the first conductivity type body region to the second insulated gate electrode; and

first and second access transistors disposed, respectively, on the first and second source/drain regions which overlie a particular body region.

9. A device in accordance with claim 8, wherein:

the first and second access transistors are vertical IGFETs and are controlled by a common insulated gate electrode.

10. A device in accordance with claim 9, wherein:

the first and second source/drain regions which overlie a particular body region are isolated from each other by an isolation layer; and

said common insulated gate electrode is disposed on said isolation layer.

12. A device in accordance with claim 2, wherein the insulated gate electrode comprises:

an electrode of doped polycrystalline silicon which is substantially surrounded by insulation.