Electrophotographic photosensitive member and method for making such a member containing amorphous silicon

• US 4,568,622 A
• Filed: 06/15/1984
• Issued: 02/04/1986
• Est. Priority Date: 06/21/1983
• Status: Expired due to Fees

• Current Assignee: Sanyo Electric Company Limited 18 Keihanhondori 2-Chome Moriguchi-Shi Osaka
• Original Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Inventors: Minami, Koji, Goto, Kazuyuki, Haku, Hisao, Kuwano, Yukinori, Fukatsu, Takeo, Ohnishi, Michitoshi
• Primary Examiner(s): Goodrow, John L.
• Application Number:
  US06/621,087
• Time in Patent Office: 599 Days
• Field of Search: 430/57, 430/84, 430/85, 430/86, 430/95, 430/60, 430/64, 430/65, 430/66, 430/135
• US Class Current: 430/57.7
• CPC Class Codes: G03G 5/0825 comprising five or six silicon-based layers

Abstract

An electrophotographic photosensitive member has a conductive substrate, a first layer structure with a single layer made mainly of amorphous silicon formed on the substrate, and a second layer structure including multiple layers also mainly made of amorphous silicon layered in succession on the first layer structure. The plurality of second layers includes at least two high resistance layers having a relatively high resistance value and at least one low resistance layer having a relatively low resistance value compared to the high resistance value. The layers of the second layer structure are layered alternately on the first layer structure so that the first and last layers in the second layer structure are high resistance layers.

Claims

1. An electrophotographic photosensitive member, comprising:

a conductive substrate, a first layer structure including a single layer made mainly of amorphous silicon formed on said substrate, said single layer functioning as a photoconductive layer, and a second layer structure (50) also functioning as a photosensitive or photoconductive layer structure including a plurality of individual layers each made mainly of amorphous silicon formed on said single layer, said individual layers of said second layer structure comprising at least two high resistance layers having a relatively higher resistance value and at least one low resistance layer having a relatively lower resistance value than said relatively higher resistance value, said low resistance layer being sandwiched between said high resistance layers, said at least two high resistance layers and said at least one low resistance layer being alternately layered on said single layer of said first layer structure, such that the first and last layers of said second layer structure comprise said high resistance layers, whereby the resistance in the surface of said second layer structure (50) is increased and the resistance in the cross-direction of said second layer structure (50) is decreased.

2. The electrophotographic photosensitive member in accordance with claim 1, wherein said at least two high resistance layers comprise a component selected from the group consisting of oxygen, carbon, the elements belonging to group III of the periodic table, and the elements belonging to group V of the periodic table.

3. The electrophotographic photosensitive member in accordance with claim 1, wherein said at least one low resistance layer comprises a component selected from the group consisting of oxygen, carbon, the elements belonging to group III of the periodic table, and the elements belonging to group V of the periodic table.

4. The electrophotographic photosensitive member in accordance with claim 1, wherein the relatively higher resistance values of said at least two high resistance layers are increasing from said single layer toward an outer surface of said member.

5. The electrophotographic photosensitive member in accordance with claim 1, wherein said at least two high resistance layers have a thickness which increases or decreases toward an outer surface of said member.

6. The electrophotographic photosensitive member in accordance with claim 1, wherein each of said at least two high resistance layers and said at least one low resistance layer has a thickness in the range of 10 Å

to 200 μ

m.

7. The electrophotographic photosensitive member in accordance with claim 1, wherein the relatively higher resistance values of said at least two high resistance layers are larger than 10⁹ Ω

cm, and wherein the relatively lower resistance value of said at least one low resistance layer is smaller than 1/10 of the resistance values of said high resistance layers.

8. The electrophotographic photosensitive member in accordance with claim 1, wherein said high and low resistance layers include an impurity so that the energy levels at the bottoms of the conduction bands thereof are even with each other in the case where the electrophotographic photosensitive member is of the positive charging type.

9. The electrophotographic photosensitive member in accordance with claim 8, wherein said impurity is selected from the group consisting of oxygen, carbon, the elements belonging to group III of the periodic table, and the elements belonging to group V of the periodic table.

10. The electrophotographic photosensitive member in accordance with claim 1, wherein said high and low resistance layers include an impurity so that the energy levels at the tops of the valence bands thereof are even with each other in the case where the electrophotographic photosensitive member is of the negative charging type.

11. The electrophotographic photosensitive member in accordance with claim 10, wherein said impurity is selected from the group consisting of oxygen, carbon, the elements belonging to group III of the periodic table, and the elements belonging to group V of the periodic table.

22. The electrophotographic photosensitive member of claim 1, wherein said first layer structure (2) is thicker than said second layer structure (50).

23. The electrophotographic photosensitive member of claim 1, wherein said second layer structure (50) comprises at least two higher resistance layers and at least two lower resistance layers arranged in alternate succession.

24. The electrophotographic photosensitive member of claim 23, wherein said at least two lower resistance layers have the same composition and the same layer thickness.

12. A method of manufacturing an electrophotographic photosensitive member, comprising the following steps:

preparing a conductive substrate, forming a first layer structure including a single photoconducting layer made mainly of amorphous silicon on said substrate and forming a second photosensitive or photoconducting layer structure including a plurality of individual layers each made mainly of amorphous silicon on said single photoconducting layer, said step of forming said second photosensitive or photoconductive layer structure comprising forming a first high resistance layer having a relatively higher resistance value, forming, on said first high resistance layer, a low resistance layer having a relatively lower resistance value than said relatively higher resistance value, and forming a further high resistance layer on said low resistance layer, said further high resistance layer having a relatively higher resistance value than said relatively lower resistance value, whereby said low resistance layer is sandwiched between said high resistance layers so that the first and last layers of said second layer structure are said high resistance layers, and whereby the resistance in the surface of said second layer structure is increased and the resistance in the cross-direction of said second layer structure is decreased.

13. The method of manufacturing an electrophotographic photosensitive member in accordance with claim 12, wherein said steps of forming said first layer structure, of forming said high resistance layers, and of forming said low resistance layer are carried out by using a glow discharge process in a predetermined atmosphere comprising a gas including at least silicon and hydrogen.

14. The method of manufacturing an electrophotographic photosensitive member in accordance with claim 13, wherein said predetermined atmosphere for use in said step of forming said high resistance layers further comprises an impurity gas including an element selected from the group consisting of oxygen, carbon, the elements belonging to group III of the periodic table, and the elements belonging to group V of the periodic table.

15. The method of manufacturing an electrophotographic photosensitive member in accordance with claim 13, wherein said predetermined atmosphere for use in the step of forming said low resistance layer further comprises an impurity gas including an element selected from the group consisting of oxygen, carbon, the elements belonging to group III of the periodic table, and the elements belonging to group V of the periodic table.

16. The method of manufacturing an electrophotographic photosensitive member in accordance with claim 14, further comprising increasing the amount of said impurity gas in said predetermined atmosphere when forming said second high resistance layers as compared to the amount of said impurity gas in said predetermined atmosphere during the forming of said first high resistance layer.

17. The method of manufacturing an electrophotographic photosensitive member in accordance with claim 12, wherein said steps of forming said high resistance layers are performed by varying respective formation parameters so that said high resistance layers are formed with an increased or decreased thickness.

18. The method of manufacturing an electrophotographic photosensitive member in accordance with claim 13, which further comprises the step of subjecting said substrate to a glow discharge in an atmosphere of at least one gas selected from the group consisting of an argon gas, a hydrogen gas, and a carbon tetrafluoride gas.

19. The method of manufacturing an electrophotographic photosensitive member in accordance with claim 13, wherein said predetermined atmosphere in said step of forming said first layer structure further comprises an oxygen gas.

20. The method of manufacturing an electrophotographic photosensitive member in accordance with claim 12, wherein said steps of forming said first layer structure, said high resistance layers, and said low resistance layer comprises a sputtering process with a silicon target and using at least hydrogen gas as a sputter gas.

21. The method of manufacturing an electrophotographic photosensitive member in accordance with claim 12, wherein said steps of forming said first layer structure, said high resistance layers, and said low resistance layer comprise an ion implantation process.