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Process for delineating photoresist lines at pattern edges only using image reversal composition with diazoquinone

  • US 4,568,631 A
  • Filed: 04/30/1984
  • Issued: 02/04/1986
  • Est. Priority Date: 04/30/1984
  • Status: Expired due to Term
First Claim
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1. A method of photolithographic mask image processing, comprising the steps of:

  • applying a photoresist layer onto a surface of a substrate, said photoresist layer comprising a photosensitive diazoquinone and an additive which produces image reversal;

    positioning a photomask above said photoresist layer, said photomask including a plurality of first segments separated by a plurality of second segments;

    optically exposing said photoresist layer with actinic radiation through said plurality of first segments of said photomask to form exposed areas, partially exposed areas, and unexposed areas in said photoresist layer;

    developing said photoresist layer to remove said exposed areas and portions of said partially exposed areas;

    baking said photoresist layer at an elevated temperature to harden said partially exposed areas with respect to said unexposed areas;

    blanket exposing said photoresist layer with actinic radiation to cause said unexposed areas to have a higher solubility than said partially exposed areas; and

    developing said photoresist layer for a time sufficient to remove portions of said photoresist layer corresponding substantially to said unexposed areas,whereby the remaining portions of said partially exposed areas form thin resist lines on the semiconductor substrate.

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