Thin film photovoltaic solar cell and method of making the same

• US 4,571,448 A
• Filed: 11/16/1981
• Issued: 02/18/1986
• Est. Priority Date: 11/16/1981
• Status: Expired due to Term

• Current Assignee: University of Delaware
• Original Assignee: University of Delaware
• Inventors: Barnett, Allen M.
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/321,381
• Time in Patent Office: 1,555 Days
• Field of Search: 136/258 PC, 136/258 AM, 136/256, 136/259, 136/260, 136/261, 357/30, 29/572, 427/74
• US Class Current: 136/259
• CPC Class Codes: H01L 31/0547 comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/1828 the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
• CPC Class Codes: H01L 31/1832 comprising ternary compounds, e.g. Hg Cd Te
• CPC Class Codes: H01L 31/184 the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
• CPC Class Codes: Y02E 10/52 PV systems with concentrators
• CPC Class Codes: Y02E 10/543 Solar cells from Group II-VI materials
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A thin film photovoltaic solar cell having an opaque electrical contact which consists of a low-cost substrate, such as a metal alloy or a metallurgical grade crystalline silicon and a barrier layer which is optically reflective, a first semiconductor layer, a second semiconductor layer, a transparent electrical contact and an encapsulant.

Claims

1. In a method for fabricating a thin film photovoltaic device on a substrate chosen from the group consisting of metals, metal alloys, and metallurgical grade semiconductors and having semiconductor layers thereon functioning as collector and absorber, the improvement comprising the steps of applying directly over the substrate an optically transparent metallurgical barrier layer selected from the group consisting of silicon carbide and both tin oxide and silicon carbide and applying said semiconductor layers thereon.

2. The method of claim 1 in which said barrier layer has a predetermined depth to provide for reflection of light.

3. The method of claim 1 in which said barrier layer is a semiconductor of the same conductivity type as said absorber layer.

4. The method of claim 1, wherein said barrier layer has a resistivity of less than 1000 ohm-centimeters to provide for minimum losses.

44. The method of claim 29, 41, 1 or 5 in which said metal alloy comprises an iron-nickel alloy.

45. The method of claim 29, 41, 1 or 5 in which said collector and absorber semiconductor layers comprise silicon.

46. The method of claim 29, 41, 1 or 5 in which said metallurgical grade semiconductor comprises silicon.

47. The method of claim 44 in which said iron-nickel alloy consists of about 58-62% iron and 42-38% nickel for matching the temperature coefficient of the silicon.

5. In a method for fabricating a thin film photovoltaic device on a substrate selected from the group consisting of metals, metal alloys, and metallurgical grade semiconductors and having semiconductor layers thereon functioning as collector and absorber, the improvement comprising the steps of

(a) texturing the substrate to provide back surface reflection to increase performance of the device by increased photon absorption within the device,

(b) applying directly over the textured substrate an optically transparent metallurgical barrier layer selected from the group consisting of silicon carbide, and both tin oxide and silicon carbide, and

(c) applying said semiconductor layers thereon.

6. The method of claim 5 in which texturing provides increased internal reflection of light.

7. The method of claim 5 in which said barrier layer is a semiconductor of the same conductivity type as said absorber layer.

8. The method of claim 5, wherein said barrier layer has a resistivity of less than 100 ohm-centimeters to provide for minimum losses.

9. In a thin film photovoltaic device on a substrate selected from the group consisting of metals, metal alloys, and metallurgical grade semiconductors and having semiconductor layers thereon functioning as a collector and as an absorber, the improvement comprising

(a) textured substrate surface to provide back surface reflection to increase performance of the device by increased photon absorption, and

(b) an optical reflection metallurgical barrier layer between said textured substrate surface and said semiconductor layers.

10. The device of claim 9 in which the substrate surface is textured to provide optimal internal reflection of light to said absorber.

11. The device of claim 9 in which said barrier layer is formed of a semiconductor material applied directly on said textured surface of said substrate.

12. The device of claim 11 in which said semiconductor material comprises silicon carbide.

13. The device of claim 11 in which said semiconductor material comprises tin oxide.

14. The device of claim 11 in which said semiconductor material comprises both silicon carbide and tin oxide.

15. The device of claim 11 in which said barrier layer is a semiconductor material of the same conductivity type as said absorber layer.

16. The device of claim 9 in which said barrier layer is a conducting layer formed directly on said textured surface of said substrate.

17. The device of claim 9 in which said semiconductor absorber is a thin film.

18. The device of claim 9 in which the semiconductor absorber comprises crystalline silicon.

19. The device of claim 9 in which the semiconductor absorber comprises an amorphous semiconductor.

20. The device of claim 19 wherein said amorphous semiconductor comprises amorphous silicon having substantial amounts of chemical elements chosen from the group including hydrogen and fluorine.

21. The device of claim 9 in which the semiconductor absorber is amorphous silicon.

22. The device of claim 9 in which the semiconductor absorber comprises copper sulfide.

23. The device of claim 9 in which said barrier layer has a predetermined depth to provide for reflection of light.

24. The device of claim 23 wherein said depth includes the distance defined as one-fourth of the wavelength of light to be reflected plus an integral number of wavelengths.

25. The device of claim 24 wherein said integral number of wavelengths includes zero.

26. The device of claim 9 in which the light to be reflected has energy slightly above the energy gap of said absorber.

27. The device of claim 9 in which said barrier layer has a resistivity of less than a 1000 ohm-centimeters to provide for minimum losses.

28. The device of claim 9 in which the index of refraction of said barrier layer is less than the index of refraction of said substrate and is less than the index of refraction of said semiconductor layer adjacent said barrier layer.

29. In a method for fabricating a thin film photovoltaic device on a substrate chosen from the group consisting of metals, metal alloys, and metallurgical grade semiconductors and having semiconductor layers functioning as collector and absorber, the improvement comprising the step of applying directly over the substrate an optical reflection metallurgical barrier layer and directly depositing said absorber layer on said barrier layer.

30. The method of claim 29 in which said barrier layer includes an optically reflective semiconductor layer.

31. The method of claim 30 in which the optically reflective semiconductor layer comprises silicon carbide.

32. The method of claim 30 in which the optically reflective semiconductor layer comprises tin oxide.

33. The method of claim 30 in which the optically transparent semiconductor barrier layer comprises both silicon carbide and tin oxide.

34. The method of claim 29 in which said barrier layer includes an optically reflective conducting layer.

35. The method of claim 30 or 34 in which said barrier layer has a predetermined depth to provide for reflection of light.

36. The method of claim 35 wherein said depth includes the distance measured by one-fourth of the wavelength of light to be reflected plus an integral number of wavelengths.

37. The method of claim 36 wherein said integral number of wavelengths includes zero.

38. The method of claim 35 in which the light to be reflected has energy slightly above the energy gap of said absorber.

39. The method of claim 29 in which said barrier layer is the same conductivity type as said absorber.

40. The method of claim 29 in which the step includes applying over the substrate a barrier layer having a resistivity of less than 1,000 ohm-centimeters to provide for minimum losses.

43. The method of claim 29 or 41 in which said barrier layer has an index of refraction less than the index of refraction of said substrate and less than the index of refraction of said semiconductor layer adjacent said barrier layer.

41. In a method for fabricating a thin film photovoltaic device on a substrate selected from the group consisting of metals, metal alloys, and metallurgical grade semiconductors and having semiconductor layers thereon functioning as collector and absorber, the improvement comprising the steps of

(a) texturing the substrate to provide back surface reflection to increase the performance of the device by providing increased internal reflection of light for increasing photon absorption with the device,

(b) applying directly over the textured substrate a conducting optical reflection metallurgical barrier layer having a predetermined depth to provide for reflection of light, and

(c) applying said semiconductor layers thereon.

42. The method of claim 41 in which said barrier layer has a resistivity of less than 1000 ohm-centimeters to provide for minimum losses.

48. A photovoltaic solar cell device including a back surface reflector comprising:

a substrate including a reflective upper surface;

at least one layer of photoactive semiconductor material over said reflective surface;

a layer of transparent conductive material between said reflective surface and said at least one layer of semiconductor material, said layer of transparent conductive material acting as a barrier to diffusion of material from said reflective surface into said at least one semiconductor layer;

the improvement wherein said layer of transparent conductive material has a predetermined thickness selected to provide enhanced reflection of light which has passed through said at least one layer of semiconductor material.