Titanium disulfide thin film and process for fabricating the same
First Claim
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1. A titanium disulfide film fabricated by chemical vapor deposition on a substrate, which comprises crystallites of titanium disulfide each being oriented at an angle of its c-axis to the substrate surface of not more than 45°
- on average.
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Abstract
The present invention relates to a titanium disulfide film fabricated on a substrate, where crystallites of titanium disulfide is oriented at an angle of their c-axis to the substrate surface of not more than 45°, and to a process for fabricating the film, where the film is prepared by chemical vapor deposition from TiCl4 and H2 S as source gases under an inner pressure of reaction tube of 30 kPa or less.
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Citations
15 Claims
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1. A titanium disulfide film fabricated by chemical vapor deposition on a substrate, which comprises crystallites of titanium disulfide each being oriented at an angle of its c-axis to the substrate surface of not more than 45°
- on average.
- View Dependent Claims (2, 7, 8, 11, 13, 15)
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3. A process for fabricating a titanium disulfide film on a substrate, which comprises forming a titanium disulfide film in which crystallites of titanium disulfide are oriented at an angle of their c-axis to the substrate surface of not more than 45°
- on average on a substrate from titanium tetrachloride and hydrogen sulfide as source gases by chemical vapor deposition under an inner pressure of a reaction system, for forming the titanium disulfide, of 30 kPa or less and at a substrate temperature of 350°
-650°
C. - View Dependent Claims (4, 5, 6, 9, 10, 12, 14)
- on average on a substrate from titanium tetrachloride and hydrogen sulfide as source gases by chemical vapor deposition under an inner pressure of a reaction system, for forming the titanium disulfide, of 30 kPa or less and at a substrate temperature of 350°
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