MMC Substrate including capacitors having perovskite structure dielectric and electrical devices including MMC substrate

• US 4,574,255 A
• Filed: 12/15/1983
• Issued: 03/04/1986
• Est. Priority Date: 12/15/1982
• Status: Expired due to Term

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Saito, Yutaka, Utsumi, Kazuaki, Shimada, Yuzo, Fujii, Shuzo
• Primary Examiner(s): LaRoche, Eugene R.
• Assistant Examiner(s): Mis, D. C.
• Application Number:
  US06/561,506
• Time in Patent Office: 810 Days
• Field of Search: 331/25, 331/49, 331/66, 331/68, 331/69, 331/70, 331/116 R, 331/116 M, 331/154, 331/156, 331/158, 331/161, 331/176, 331/177 V, 331/DIG. 3, 361/221, 361/222, 361/412, 361/414, 501/134, 501/136
• US Class Current: 331/25
• CPC Class Codes: C04B 35/497 based on solid solutions with lead oxides
• CPC Class Codes: C04B 35/499 containing also titanates
• CPC Class Codes: G01K 7/32 using change of resonant frequency of a crystal
• CPC Class Codes: H01L 23/15 Ceramic or glass substrates H01L23/142, H01L23/145, H01L23/147 take precedence
• CPC Class Codes: H01L 27/01 comprising only passive thin-film or thick-film elements formed on a common insulating substrate passive two-terminal components without a potential-jump or surface barrier for integrated circuits, details thereof and multistep manufacturing processes therefor H01L28/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H03B 5/36 active element in amplifier being semiconductor device H03B5/323, H03B5/326 , H03B5/38 take precedence
• CPC Class Codes: H05K 1/0306 Inorganic insulating substrates, e.g. ceramic, glass
• CPC Class Codes: H05K 1/092 Dispersed materials, e.g. conductive pastes or inks
• CPC Class Codes: H05K 1/162 incorporating printed capacitors
• CPC Class Codes: H05K 1/167 incorporating printed resistors
• CPC Class Codes: H05K 3/4614 the electrical connections between the circuit boards being made during lamination
• CPC Class Codes: H05K 3/4629 laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
• CPC Class Codes: H05K 3/4688 Composite multilayer circuits, i.e. comprising insulating layers having different properties having a special base or central core H05K3/4602
• CPC Class Codes: Y10S 331/03 Logic gate active element oscillator

Abstract

Between insulative layers (31-37, 41-44), a multilayer substrate comprises at least one dielectric layer (26-29). It is possible to form capacitors (58), resistors (46), and wiring conductors (61, 62) in the substrate. The at least one dielectric layer should be of at least one dielectric composition which has a perovskite structure. Preferably, each insulative layer is of an insulating material which consists essentially of aluminum oxide and lead borosilicate glass. The substrate is convenient in manufacturing a crystal oscillator by mounting a crystal vibrator (71) and a transistor (72) on the principal surface(s). Examples of the dielectric composition are:

Pb[(Fe.sub.2/3.W.sub.1/3).sub.0.33 (Fe.sub.1/2.Nb.sub.1/2).sub.0.67

]O₃,

Pb[(Mn.sub.1/3.Nb.sub.2/3).sub.0.01 (Mg.sub.1/2.W.sub.1/2).sub.0.30

(Ni_1/3.Nb_2/3)₀.49 Ti₀.20 ]O₃,

and

Pb[(Mg.sub.1/2.W.sub.1/2).sub.0.66 Ti.sub.0.34 ]O.sub.3.

Claims

1. In a monolithic multicomponents ceramic (MMC) substrate comprising at least one dielectric layer which is of at least one composition having a perovskite structure, a plurality of insulative layers on both sides of said at least one dielectric layer, a plurality of resistive films on at least one of said dielectric and said insulative layers, said resistive films being resistors, a plurality of pairs of conductive films on both sides of at least one of said at least one dielectric layer, said pairs of conductive films being capacitors, and a plurality of wiring conductors on and through predetermined ones of said dielectric and said insulative layers to form an electrical circuit together with said resistive films and said pairs.

2. An MMC substrate as claimed in claim 1, wherein said insulative layers are of at least one material which is fired toegther with said at least one composition at a temperature selected between 850°

C. and 1050°

C.

3. An MMC substrate as claimed in claim 2, wherein said composition comprises, ferric oxide, niobium oxide, and tungsten oxide and is fired at a temperature which is not higher than 950°

C.

4. An MMC substrate as claimed in claim 3, wherein said composition is of a chemical formula of Pb[(Fe_2/3.W_1/3)₀.33 (Fe_1/2.Nb_1/2)₀.67 ]O₃ and is fired at about 950°

C.

5. An MMC substrate as claimed in claim 3, wherein said composition is of a chemical formula of Pb[(Fe_2/3.W_1/3)₀.36 (Fe_1/2.Nb_1/2)₀.48 (Zn_1/3.Nb_2/3)₀.16 ]O₃ and is fired at about 890°

C.

6. An MMC substrate as claimed in claim 3, wherein said composition is of a chemical formula of Pb[(Fe_2/3.W_1/3)₀.85 (Mn_1/3.Nb_2/3)₀.03 Ti₀.12 ]O₃ and is fired at about 920°

C.

7. An MMC substrate as claimed in claim 2, wherein said composition comprises manganese oxide, niobium oxide, magnesium oxide, titanium oxide, and at least one of tungsten oxide and nickel oxide and is fired at a temperature which is not higher than 1050°

C.

8. An MMC substrate as claimed in claim 7, wherein said composition is of a chemical formula of Pb[(Mn_1/3.Nb_2/3)₀.01 (Mg_1/3.Nb_2/3)₀.30 (Ni_1/3.Nb_2/3)₀.49 Ti₀.20 ]O₃ and is fired at about 1050°

C.

9. An MMC substrate as claimed in claim 7, wherein said composition is of a chemical formula of Pb[(Mn_1/3.Nb_2/3)₀.005 (Ni_1/3.Nb_2/3)₀.295 (Mg_1/2.W_1/2)₀.29 Ti₀.41 ]O₃ and is fired at about 960°

C.

10. An MMC substrate as claimed in claim 7, wherein said composition is of a chemical formula of Pb[(Mn_1/3.Nb_2/3)₀.02 (Mg_1/2.W_1/2)₀.52 Ti₀.23 Zr₀.23 ]O₃ and is fired at about 1000°

C.

11. An MMC substrate as claimed in claim 2, wherein said composition comprises magnesium oxide, tungsten oxide, and titanium oxide and is fired at a temperature which is not higher than 1000°

C.

12. An MMC substrate as claimed in claim 11, wherein said composition is of a chemical formula of Pb[(Mg_1/2.W_1/2)₀.66 Ti₀.34 ]O₃ and is fired at about 900°

C.

13. An MMC substrate as claimed in claim 11, wherein said composition is of a chemical formula of Pb[(Mg_1/2.W_1/2)₀.65 (Mn_1/3.Nb_2/3)₀.01 Ti₀.34 ]O₃ and is fired at about 900°

C.

14. An MMC substrate as claimed in claim 11, wherein said composition is of a chemical formula of Pb[(Mg_1/2.W_1/2)₀.54 Ti₀.23 Zr₀.23 ]O₃ and is fired at about 1000°

C.

15. An MMC substrate as claimed in claim 11, wherein said composition is of a chemical formula of Pb[(Mg_1/2.W_1/2)₀.24 (Ni_1/3.Nb_2/3)₀.40 Ti_O.36 ]O₃ and is fired at about 990°

C.

16. An MMC substrate as claimed in claim 2, wherein said at least one dielectric layer comprises a first dielectric layer of a predetermined dielectric constant and a second dielectric layer of a dielectric constant which is different from said predetermined dielectric constant.

17. An MMC substrate as claimed in claim 2, wherein said at least one material consists essentially of aluminium oxide and lead borosilicate glass, said aluminium oxide and said lead borosilicate glass being in those constituent ranges of 40 to 60 percent and 40 to 60 percent, respectively, which is selected to become 100 percent in total, said percentages being by weight.

18. An MMC substrate as claimed in claim 17, wherein said lead borosilicate glass consists essentially of, when represented by oxides, lead oxide, boron oxide, silicon dioxide, at least one oxide of elements of Group II, and at least one oxide of elements of Group IV except carbon, silicon, and lead in those constituent ranges of 3 to 65 percent, 2 to 50 percent, 4 to 65 percent, 0.1 to 50 percent, and 0.02 to 20 percent, respectively, which are selected to become 100 percent in total, all percentages being by weight.

19. An MMC substrate as claimed in claim 2, wherein each resistive film is a fired resistive paste film.

20. An MMC substrate as claimed in claim 2, wherein each resistive film has a composition comprising ruthenium dioxide and lead borosilicate glass in a composition ratio which is selected from ranges between 10:

90 and 50;

50 by weight.

21. An MMC substrate as claimed in claim 20, wherein said lead borosilicate glass consists essentially of, when represented by oxides, lead oxide, boron oxide, silicon dioxide, at least one oxide of elements of Group II, and at least one oxide of elements of Group IV except carbon, silicon, and lead in those constituent ranges of 3 to 65 percent, 2 to 50 percent, 4 to 65 percent, 0.1 to 50 percent, and 0.02 to 20 percent, respectively, which are selected to become 100 percent in total, all percentages being by weight.

22. An MMC substrate as claimed in claim 2, wherein each conductive film is a fired conductive paste film.

23. An MMC substrate as claimed in claim 2, wherein each wiring conductor comprises a fired conductive paste film on one of said predetermined ones of the dielectric and the insulative layers.

24. An MMC substrate as claimed in claim 2, wherein each wiring conductor comprises a fired conductive paste mass in a via hole preliminarily formed through one of said predetermined ones of the dielectric and the insulative layers.

25. In a piezoelectric oscillator comprising a monolithic multicomponents ceramic substrate having a pair of principal surfaces, and a piezoelectric oscillation element and an active semiconductor device on at least one of said principal surfaces, said substrate comprising at least one dielectric layer which is of at least one composition having a perovskite structure, a plurality of insulative layers on both sides of said at least one dielectric layer, a plurality of resistive films on at least one of said dielectric and said insulative layers, said resistive films being resistors, a plurality of pairs of conductive films on both sides of at least one of said at least one dielectric layer, said pairs of conductive films being capacitors, and a plurality of wiring conductors on and through predetermined ones of said dielectric and said insulative layers to form an oscillation circuit together with said piezoelectric oscillation element, said active semiconductor device, said resistive films, and said pairs, two of said insulative layers providing said principal surfaces, respectively.

26. A piezoelectric oscillator as claimed in claim 25, wherein said active semiconductor device comprises a transistor.

27. A piezoelectric oscillator as claimed in claim 25, wherein said active semiconductor device comprises a NAND circuit.

28. A piezoelectric oscillator as claimed in claim 25, said oscillation circuit being for generating oscillation of a first frequency, said oscillator further comprising an additional piezoelectric oscillation element and an additional active semiconductor device on at least one of said principal surfaces to form an additional oscillation circuit together with those of said resistive fims, said pairs, and said wiring conductors which are not used in the oscillation circuit of said first frequency, said additional oscillation circuit being for generating oscillation of a second frequency which is different from said first frequency.

29. A piezoelectric oscillator as claimed in claim 25 and for use as a temperature sensing head of a thermometer.

30. A piezoelectric oscillator as claimed in claim 25, said substrate further comprising an additional resistive film on one of said two of the insulative films, said oscillator further comprising a temperature sensitive element on one of said principal surfaces and a current supply means for supplying an electric current to said additional resistive film, said temperature sensitive element being connected by predetermined two of said wiring conductors to said additional resistive film and said current supply means so as to control said electric current.

31. A piezoelectric oscillatric oscillator as claimed in claim 25, said substrate further comprising a plurality of terminal films on at least one of said principal surfaces so that predetermined ones of said terminal films can selectively be connected to a particular one thereof by a conductive bar, each resistive film having a first and a second end, predetermined ones of said wiring conductors connecting the first ends of predetermined ones of said resistive films to said predetermined ones of the terminal films, respectively, the second ends of said predetermined ones of the resistive films being connected in common to a particular one of said wiring conductors, one of said predetermined ones of the resistive films that is connected to said particular one of the terminal films by said conductive bar being used in said oscillation circuit.

32. A piezoelectric oscillator as claimed in claim 31, further comprising a temperature sensitive resistor on one of said principal surfaces and in electrical contact with said particular ones of the terminal films and the wiring conductors.

33. A piezoelectric oscillator as claimed in claim 25, said substrate further comprising a plurality of terminal films on at least one of said principal surfaces so that predetermined ones of said terminal films can selectively be connected to a particular one thereof by a conductive bar, each pair consisting of a first and a second conductive film, predetermined ones of said wiring conductors connecting the first conductive films of predetermined ones of said pairs to said predetermined ones of the terminal films, respectively, the second ends of said predetermined ones of the pairs being connected in common to a particular one of said wiring conductors, one of said predetermined ones of the pairs that includes the first conductive film connected to said particular one of the terminal films by said conductive bar being used in said oscillation circuit.

34. A piezoelectric oscillator as claimed in claim 33, further comprising a temperature senstive resistor on one of said principal surfaces and in electrical contact with those two of said wiring conductors which are connected to both ends of at least one of said resistive films.

35. A piezoelectric oscillator as claimed in claim 33, further comprising a variable reactance element on one of said principal surfaces and in electrical contact with a predetermined one of said particular one of the terminal films and the wiring conductors and with a predetermined one of said first and said second conductive films of one of said pairs that is other than said predetermined ones of the pairs.

36. A piezoelectric oscillator as claimed in claim 25, further comprising a plurality of terminal films and a switch on at least one of said principal surfaces, predetermined ones of said terminal films capable of being selectively connected to a particular one thereof by said switch, preselected ones of said terminal films capable of being selectively connected to a specific one thereof by said switch, prescribed ones of said terminal films capable of being selectively connected to one of said particular and said specific ones of the terminal films by said switch, each resistive film having a first and a second end, each pair consisting of a first and a second conductive films, predetermined ones of said wiring conductors connecting the first conductive films of predetermined ones of said pairs to said predetermined ones of the terminal films, respectively, the second conductive films of said predetermined ones of the pairs being connected in common to a particular one of said wiring conductors, preselected ones of said wiring conductors connecting the first conductive films of predetermined ones of said pairs to said preselected ones of the terminal films, respectively, the second conductive films of said preselected ones of the pairs being connecting in common to a specific one of said wiring conductors, prescribed ones of said wiring conductors connecting the first ends of prescribed ones of said resistive films to said prescribed ones of the terminal films, respectively, the second ends of said prescribed ones of the resistive films being connected in common to a prescribed one of said wiring conductors, those of said pairs and said resistive films which are connected to said particular and said specific ones of the terminal films by said switch being used in said oscillation circuit.

37. In a piezoelectric oscillator comprising a monolithic multicomponents ceramic substrate having a pair of principal surfaces and a piezoelectric oscillation element, an active semiconductor device, an inductor, and a switch on at least one of said principal surfaces, said substrate comprising at least one dielectric layer which is of at least one composition having a perovskite structure, a plurality of insulative layers on both sides of said at least one dielectric layer, a plurality of resistive films on at least one of said dielectric and said insulative layers, said resistive films being resistors, a plurality of pairs of conductive films on both sides of at least one of said at least one dielectric layer, said pairs of conductive films being capacitors, and a plurality of wiring conductors on and through predetermined ones of said dielectric and said insulative layers so that said wiring conductors form a first oscillation circuit together with said piezoelectric oscillation element, said active semiconductor device, said switch, said resistive films, and said pairs and that said wiring conductors form a second oscillation circuit together with said piezoelectric oscillation element, said active semiconductor device, said inductor, said switch, said resistive films, and said pairs, two of said insulative layers providing said principal surfaces, respectively, said switch being for selectively putting said first and said second oscillation circuits into operation.