Infrared radiation detector

• US 4,574,263 A
• Filed: 06/07/1985
• Issued: 03/04/1986
• Est. Priority Date: 09/24/1980
• Status: Expired due to Term

• Current Assignee: COMMONWEALTHOF AUSTRALIA THE, THE SECRETARY, DEPARTMENT OF INDUSTRY AND COMMERCE, ANZAC PARK WEST BUILDING, CANBERRA, A.C.T. 2600, COMMONWEALTH OF AUSTRALIA
• Original Assignee: Commonwealth of Australia
• Inventors: Liddiard, Kevin C.
• Primary Examiner(s): Albritton, C. L.
• Assistant Examiner(s): LATEEF, MARVIN M
• Application Number:
  US06/742,365
• Time in Patent Office: 270 Days
• Field of Search: 338/18, 338/25, 250/338
• US Class Current: 338/18
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
• CPC Class Codes: H10N 15/10 Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point

Abstract

An infrared radiation detector in which a stable substrate (5) has a hole (10) through it and a pair of bonding pads (9) on two opposite sides of the hole, the hole being covered by a pellicle (6) of insulating or semi-conductor material with supports over the hole, a detector element (7) comprising an ultrathin infrared absorbing film of nickel, palladium, platinum or iridium less than 10 nm thick or a gold film less than 20 nm thick, two sides of the detector element connecting to the bonding pads (9) by thin film contacts (8).

Claims

1. An infrared radiation detector comprising

(a) a substrate formed of a stable material such as an aluminum oxide ceramic, a glass, a metal having an electrically insulating surface, or a silicon slice, said substrate having a hole therethrough;

(b) a pair of bonding pads spaced apart one on each side of the said hole;

(c) a pellicle having a thickness less than 50 nm to have a low heat retaining capacity and high thermal resistance formed of an insulating or semiconductor material selected from the group consisting of aluminium oxide, silicon dioxide, silicon monoxide, silicon nitride, cryolite, germanium, and silicon, positioned to span the said aperture;

(d) a detector comprised of an essentially straight electrical resistance element fixed on the said pellicle to be positioned over the said hole, and comprising an ultrathin infrared-absorbing film less than 10 nm thick selected to form both the absorber of infrared energy and a resistance element and selected from the group consisting of nickel, palladium, platinum and iridium such metal being selected to have a low heat retaining capacity and high thermal resistance; and

(e) a pair of thin-film conductive contacts connecting opposite sides of the said detector element to the said bonding pads.

2. An infrared radiation detector according to claim 1 formed as an array of detector elements spaced apart on an elongated pellicle mounted on the said substrate to extend across a series of holes, each detector element being joined to a pair of thin-film interformed connects by a pair of thin-film contacts, each detector of the array and the thin-film contacts and interconnects being electrically isolated from each adjacent detector element.

3. An infrared radiation detector according to claim 1 or 2 wherein the substrate is a ceramic and the said holes are formed by a high speed diamond drill.

4. An infrared radiation detector according to claim 1 or 2 wherein the substrate is glass and the said holes are formed by photolithography using an etchant.

5. An infrared radiation detector according to claim 1 or 2 wherein the substrate is polycrystalline or single crystal silicon, and the said holes are formed by photolithography using an etchant.

6. An infrared radiation detector according to claim 1 or 2 wherein the substrate is metal having a polished surface coated with an insulating layer by anodising.

7. An infrared radiation detector according to claim 1 or 2 wherein the substrate is metal having a polished surface coated with an insulating layer by chemical deposition.

8. An infrared radiation detector according to claim 1 or 2 wherein the substrate is metal having a polished surface coated with an insulating polymer.

9. An infrared radiation detector according to claim 1 or 2 wherein the substrate has the said holes formed in it by spark erosion.

10. An infrared radiation detector according to claim 1 or 2 wherein the substrate has the said holes formed in it by abrasive milling.

11. An infrared radiation detector according to claim 1 or 2 wherein the said detector element prepared by deposition through precision micro-mechanical masks.

12. An infrared radiation detector according to claim 1 or 2 wherein the said detector element prepared by deposition followed by pattern etching using photolithography.

13. A method of producing an infrared radiation detector, which detector comprises a substrate formed of a stable material having a hole therethrough, a pair of bonding pads spaced apart one on each side of the hole, a pellicle having a thickness less than 50 nm formed of an insulating or semiconductor material selected from the group consisting of aluminium oxide, silicon dioxide, silicon monoxide, silicon nitride, cryolite, germanium, and silicon, positioned to span the said aperture, a detector comprised of an electrical resistance element carried on the said pellicle to be positioned over the said hole, and comprising an ultrathin infrared-absorbing film selected from the group consisting of nickel, palladium, platinum, and a pair of thin-film conductive contacts connecting opposite sides of the said detector element to the said bonding pads, said method comprising forming said pellicle by anodising of vacuum deposition on to a backing comprising a metal film of polymer membrane while generating the required shape by masking techniques, pressing said pellicle to the said substrate, and removing said backing.

14. A method of producing an infrared radiation detector, which detector comprises a substrate formed of a stable material having a hole therethrough, a pair of bonding pads spaced apart one on each side of the hole, a pellicle having a thickness less than 50 nm to have a low heat retaining capacity and high thermal resistance formed of an insulating or semiconductor material selected from the group consisting of aluminium oxide, silicon dioxide, silicon monoxide, silicon nitride, cryolite, germanium, and silicon, positioned to span the said aperture, a detector comprised of an electrical resistance element carried on the said pellicle to be positioned over the said hole, and comprising an essentially straight ultrathin infrared-absorbing film less 10 nm thick selected to form both the absorber of infrared energy and a resistance element and selected from the group consisting of nickel, palladium, platinum or iridium, and a pair of thin-film conductive contacts connecting opposite sides of the said detector element to the said bonding pads, said method comprising forming said pellicle by depositing the pellicle material by vacuum or chemical vapour deposition directly onto a silicon substrate and then etching said hole into the rear surface of the silicon wafer whereby to render the pellicle freely-supporting.

15. An infrared radiation detector comprising a substrate formed of a stable material such as an aluminium oxide ceramic, a glass, a metal having an electrically insulating surface, or a silicon slice, said substrate having a hole therethrough;

a pair of bonding pads spaced apart one on each side of the said hole;

a pellicle having a thickness less than 50 nm to have a low heat retaining capacity and high thermal resistance formed of an insulating or semiconductor material selected from the group consisting of aluminium oxide, silicon dioxide, silicon monoxide, silicon nitride, cryolite, germanium, and silicon, positioned to span the said aperture;

a detector comprised of an essentially straight electrical resistance element fixed on the said pellicle to be positioned over the said hole, and comprising an ultrathin infrared-absorbing film selected to form both the absorber of infrared energy and a resistance element and formed of a gold film less than 20 nm thick having a low heat retaining capacity and high thermal resistance; and

a pair of thin-film conductive contacts connecting opposite sides of the said detector element to the said bonding pads.

16. A method of producing an infrared radiation detector, which detector comprises a substrate formed of a stable material having a hole therethrough, a pair of bonding pads spaced apart one on each side of the hole, a pellicle having a thickness less than 50 nm to have a low heat retaining capacity and high thermal resistance formed of an insulating or semiconductor material selected from the group consisting of aluminium oxide, silicon dioxide, silicon monoxide, silicon nitride, cryolite, germanium, and silicon, positioned to span the said aperture, a detector comprised of an essentially straight electrical resistance element fixed on the said pellicle to be positioned over the said hole, and comprising an ultrathin infrared-absorbing film selected to both the absorber of infrared energy and a resistance element and formed of a gold film less than 20 nm thick, an a pair of thin-film conductive contacts connecting opposite sides of the said detector element to the said bonding pads, said method comprising forming said pellicle by anodizing or vacuum deposition onto a backing comprising a metal film or polymer membrane while generating the required shape by masking techniques, pressing said pellicle to the said substrate, and removing said backing.

17. A method of producing an infrared radiation detector, which detector comprises a substrate formed of a stable material having a hole therethrough, a pair of bonding pads spaced apart one one each side of the hole, a pellicle having a thickness less than 50 nm to have a low heat retaining capacity and high thermal resistance formed of an insulating or semiconductor material selected from the group consisting of aluminium oxide, silicon dioxide, silicon monoxide, silicon nitride, cryolite, germanium, and silicon, positioned to span the said aperture, a detector comprises of an essentially straight electrical resistance element carried on the said pellicle to be positioned over the said hole, and comprising an ultrathin infrared-absorbing film selected to from both the absorber of infrared energy and a resistance element and formed of a gold film less than 20 nm thick, and a pair of thin-film conductive contacts connecting opposite sides of the said detector element to the said bonding pads, said method comprising forming said pellicle by depositing the pellicle material by a vacuum or chemical vapour deposition directly onto a silicon substrate and then etching said hole into the rear surface of the silicon wafer whereby to render the pellicle freely-supporting.