Method and apparatus for radiation testing of electron devices
First Claim
1. A test apparatus for electronic devices comprising,means for supporting an electronic device, said electronic device partially formed of silicon dioxide,a source of radiation having a collimated beam, said radiation having an energy which is ionizing to silicon dioxide, causing permanent degradation of electrical characteristics of said electronic device, said source mounted above said device supporting means,an electrical probe means for applying electrical power to said electronic device and communicating device performance date outwardly, said probe means located between said device supporting means and said beam source, said probe means having fine electrical wires contacting said electronic device, said probe means having an auxiliary collimator with an aperture defined therein for transmitting the beam to the electronic device under test.
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Accused Products
Abstract
A test apparatus for electron devices, such as integrated circuits, at the wafer stage of fabrication, wherein a beam of ionizing radiation is directed through an electrical probe card and onto the wafer under test. The probe card and the radiation beam share a common port through which a selected device or group of devices is exposed, but other devices on the wafer are not similarly exposed. A microscope, supported on a frame, is interchangeable with the radiation beam source, sharing the common port, so that a tested device may be observed.
113 Citations
18 Claims
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1. A test apparatus for electronic devices comprising,
means for supporting an electronic device, said electronic device partially formed of silicon dioxide, a source of radiation having a collimated beam, said radiation having an energy which is ionizing to silicon dioxide, causing permanent degradation of electrical characteristics of said electronic device, said source mounted above said device supporting means, an electrical probe means for applying electrical power to said electronic device and communicating device performance date outwardly, said probe means located between said device supporting means and said beam source, said probe means having fine electrical wires contacting said electronic device, said probe means having an auxiliary collimator with an aperture defined therein for transmitting the beam to the electronic device under test.
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11. A semiconductor test apparatus comprising,
a means for supporting a semiconductor wafer, said wafer partially formed of silicon dioxide, a radiation source having an energy which is ionizing to silicon dioxide directing a collimated beam of ionizing radiation onto an auxiliary collimator, said auxiliary collimator having an aperture of dimensions corresponding to a semiconductor integrated circuit die of said wafer, an electrical test probe card for testing electrical characteristics of a semiconductor integrated circuit, said probe card mounted in proximity to said wafer support means, said support means and probe card both disposed beneath said auxiliary collimator, said probe card supporting the auxiliary collimator, the collimator defining an aperture therein through which said beam passes, means for simultaneously energizing said ionizing radiation source and said probe card for electrical testing of an integrated circuit during irradiation, and means for indexing said wafer support means to bring another integrated circuit die from said wafer into the path of said collimated beam.
Specification