Etching optical surfaces on GaAs

• US 4,576,691 A
• Filed: 07/31/1984
• Issued: 03/18/1986
• Est. Priority Date: 07/31/1984
• Status: Expired due to Term

• Current Assignee: Bell Telephone Laboratories, Inc. (Nokia Corporation)
• Original Assignee: AT&T, Inc.
• Inventors: Smith, Lawrence E., Kohl, Paul A., Trop, Harvey S.
• Primary Examiner(s): TUFARIELLO, THOMAS
• Application Number:
  US06/636,177
• Time in Patent Office: 595 Days
• Field of Search: 204/129.75, 204/129.3
• US Class Current: 257/103
• CPC Class Codes: C25F 3/12 of semiconducting materials
• CPC Class Codes: C25F 3/14 locally
• CPC Class Codes: H01L 21/30635 of AIIIBV compounds

Abstract

Photoelectrochemical etching of gallium arsenide in highly alkaline aqueous solution yields optically smooth etched surfaces suitable for many optical devices. Higher optical quality is obtained for lower irradiation energy provided sufficient energy is available to produce holes in the valence band.

Claims

1. A process for fabricating an optical device comprising at least one n-type or intrinsic compound semiconductor consisting of at least 95 mole percent gallium arsenide comprising the step of etching at least part of the compound semiconductor to produce a compound semiconductor surface of optical quality characterized in that the etching procedure is an electrochemical photoetching procedure in which electric current is passed through the compound semiconductor, electrolytic solution with conductivity greater than 0.0001 mhos/cm and anode in which the electrochemical photoetching procedure further comprises

a. applying a potential to the semiconducting compound which is between the maximum potential of the valence band of the semiconductor compound in the electrolytic solution and the minimum potential of the conduction band of the semiconductor compound in the electrolytic solution;

b. illuminating the part of the surface of the compound semiconductor to be etched with radiation of sufficient energy to produce holes in the valence band; and

c. the electrolytic solution comprises aqueous alkaline solution with pH greater than 11.

2. The process of claim 1 in which the compound semiconductor consists essentially of n-type gallium arsenide.

3. The process of claim 1 in which the pH is greater than 12.

4. The process of claim 3 in which the pH is greater than 13.

5. The process of claim 4 in which the electrolytic solution comprises KOH in the concentration range from 0.1 to 2±

0.2 molar.

6. The process of claim 1 in which the roughness of the compound semiconductor surface of optical quality is less than about one quarter of a wavelength inside the compound semiconductor.

7. The process of claim 1 in which the radiation wavelength is greater than about 700 nm.

8. The process of claim 1 in which the potential is between -0.2 and 1.0 volts on the SCE scale.

9. The process of claim 8 in which the potential is between -0.2 and 0.7 volts on the SCE scale.

10. The process of claim 1 in which the device is a light-emitting diode.

11. A device produced by the process of claim 1.