Plasma etch cleaning in low pressure chemical vapor deposition systems

• US 4,576,698 A
• Filed: 06/30/1983
• Issued: 03/18/1986
• Est. Priority Date: 06/30/1983
• Status: Expired due to Fees

• Current Assignee: Sydis, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Gallagher, James P., Schmidt, Howard W. Jr.
• Primary Examiner(s): Metz, Andrew H.
• Assistant Examiner(s): LEADER, WILLIAM T
• Application Number:
  US06/509,518
• Time in Patent Office: 992 Days
• Field of Search: 204/192 R, 204/192 E, 204/298, 134/1, 134/22.1, 118/715, 118/50.1, 427/34, 427/38, 427/39, 427/248.1, 156/643, 156/345
• US Class Current: 204/192.32
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: H01J 37/32 Gas-filled discharge tubes heating by discharge H05B

Abstract

A system for in situ plasma etch removal of deposition products that accumulate during device processing. An r.f. electrode is configured to removably fit coaxially within the chamber, a quartz tube. A chamber heater shield functions also as an r.f. return. Cleaning gas is introduced into the chamber and r.f. power supplied to the electrodes to initiate an r.f. plasma which etch cleans formations on the quartz tube walls. The deposition equipment is cleaned without the need for disassembly.

Claims

1. A method of removing deposition products from the interior of a chemical vapor deposition chamber comprising the steps of:

removing a device processed in said chamber and providing a pair of r.f. electrodes relative to said chamber;

mounting one of said electrodes into said chamber following removal of the device processed and sealing said chamber;

supplying a cleaning gas into said chamber, and

supplying r.f. electrical power between said pair of electrodes to establish an r.f. plasma of the cleaning gas within said chamber to clean by plasma etching deposition products from the interior of said chamber.

2. The method of claim 1 further comprising the steps of evacuating said chamber prior to the introduction of cleaning gas and again evacuating said chamber following plasma etching.

3. The method of claim 1 wherein a first of said electrodes is configured to be mounted externally of said chamber and the second of said electrodes is mounted coaxially with respect to the chamber.

4. The method of claim 3 wherein an annular heating element is disposed outside said chamber and a metallic thermal shield covering said heating element comprises said first electrode.

5. The method of claim 3 wherein a first r.f. isolator is positioned at one end of said second electrode and a second r.f. isolator is positioned at the other end of said second electrode.

6. The method of claim 1 wherein a vacuum pump coupled to one end of said chamber opposite a location where said cleaning gas is supplied into said chamber.