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Plasma etch cleaning in low pressure chemical vapor deposition systems

  • US 4,576,698 A
  • Filed: 06/30/1983
  • Issued: 03/18/1986
  • Est. Priority Date: 06/30/1983
  • Status: Expired due to Fees
First Claim
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1. A method of removing deposition products from the interior of a chemical vapor deposition chamber comprising the steps of:

  • removing a device processed in said chamber and providing a pair of r.f. electrodes relative to said chamber;

    mounting one of said electrodes into said chamber following removal of the device processed and sealing said chamber;

    supplying a cleaning gas into said chamber, andsupplying r.f. electrical power between said pair of electrodes to establish an r.f. plasma of the cleaning gas within said chamber to clean by plasma etching deposition products from the interior of said chamber.

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