Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants

• US 4,578,128 A
• Filed: 12/03/1984
• Issued: 03/25/1986
• Est. Priority Date: 12/03/1984
• Status: Expired due to Term

• Current Assignee: Magnachip Semiconductor Limited (Magnachip Semiconductor)
• Original Assignee: NCR Corporation
• Inventors: Mundt, Randall S., Wyatt, Ray E.
• Primary Examiner(s): Saba, William G.
• Application Number:
  US06/677,636
• Time in Patent Office: 477 Days
• Field of Search: 29/571, 29/576 B, 29/576 W, 148/187, 148/191, 148/175, 156/643, 357/42, 357/50
• US Class Current: 438/433
• CPC Class Codes: H01L 21/2253 by ion implantation
• CPC Class Codes: H01L 21/76202 using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO H01L21/76235 takes precedence; together with vertical isolation, e.g. LOCOS in a SOI substrate, H01L21/76264
• CPC Class Codes: H01L 21/823892 with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
• CPC Class Codes: Y10S 438/936 Graded energy gap

Abstract

A retrograde dopant distribution is provided in a semiconductor substrate by the combined use of indiffusion and surface outdiffusion and without the use of high energy implants or buried epitaxial layers. The retrograde dopant distribution is provided both in the n-well and the p-well regions to a depth sufficient to accommodate deep trench isolation structures.

Claims

1. A process for forming a vertical retrograde dopant distribution in a semiconductor device, comprising:

providing a substrate of a first conductivity type;

forming on the substrate an epitaxial layer of the second conductivity type and of selected thickness;

forming a mask on the epitaxial layer exposing a first well region and a covered second well region;

doping the surface region of the epitaxial layer in the first well region;

removing the mask to expose both well regions; and

heating the structure for a predetermined time and temperature to form by outdiffusion a retrograde dopant distribution of the first conductivity type in the first well region and to form a retrograde dopant distribution of the second conductivity type in the adjacent second well region.

2. The process of claim 1 wherein, prior to forming the mask, a trench dielectric isolation structure is formed between the first and second well regions.

3. The process of claim 2 wherein forming the trench dielectric structure comprises:

making the substrate to define the trench region;

etching the trench in the presence of the mask; and

filling the trench with dielectric material.

4. The process of claims 2 or 3 wherein the process parameters are selected to provide a retrograde dopant concentration encompassing substantially the depth of the trench dielectric structure.

5. A process for forming a vertical retrograde dopant concentration in a semiconductor substrate comprising:

providing a substrate of n-conductivity type;

forming on the substrate a p-type epitaxial layer;

forming trench dielectric isolation structures in the epitaxial layer defining and dielectrically isolating at least first and second device regions in the layer;

forming a mask on the epitaxial layer exposing a first device region adjacent a covered second device region;

lightly n-type doping the surface region of the epitaxial layer in the first device region;

removing the mask; and

heating the structure for a predetermined time and temperature so that a combination of outdiffusion and indiffusion forms a retrograde dopant distribution of n-type conductivity in the first device region and a retrograde dopant distribution of p-type conductivity in the adjacent second device region.

6. A process for forming a vertical retrograde dopant concentration in a semiconductor substrate comprising:

providing a substrate of n-conductivity type and concentration about 6×

10¹⁸ cm^-3 ;

forming on the substrate a p-type epitaxial layer about five microns thick and of concentration about 2×

10¹⁶ cm^-3 ;

forming trench dielectric isolation structures in the epitaxial layer defining and dielectrically isolating at least first and second device regions in the layer;

forming a mask on the epitaxial layer exposing a first device region adjacent a covered second device region;

lightly implant doping the surface region of the epitaxial layer in the first device region using n-type dopant and an energy of about 150 keV and a dose of about 5×

10¹³ cm^-2 ;

removing the mask; and

heating the structure for a predetermined time and temperature so that a combination of outdiffusion and indiffusion forms a retrograde dopant distribution of n-type conductivity in the first device region and a retrograde dopant distribution of p-type conductivity in the adjacent second device region.

7. The process of claim 6 wherein the outdiffusion and indiffusion heating step involves heating in an inert gas ambient at about 1150°

C. for 10 hours.

8. The process of claim 6 wherein the outdiffusion and indiffusion involves heating in a vacuum ambient.