Induction heated reactor system for chemical vapor deposition
First Claim
1. In a chemical vapor deposition system, in combination:
- a generally closed reaction chamber having walls formed from a dielectric material;
1 Assignment
0 Petitions
Accused Products
Abstract
A chemical vapor deposition system which includes a generally closed reaction chamber having walls formed from a dielectric material. A susceptor for carrying a plurality of semiconductor wafers is positioned within the chamber. An induction coil is positioned in the vicinity of the susceptor for carrying an alternating electric current to produce induction heating of the susceptor and thereby heating the back side of the wafers thereon. Low frequency induction heating and variations in susceptor thickness are used to produce uniformity of temperature. Boundary control arrangement between the susceptor surface and wafer surfaces are used to improve deposition uniformity. A coating is formed on wall portions of the reaction chamber facing the susceptor and wafers carried thereon for reflecting heat energy radiated from the susceptor and the wafers positioned thereon back to the susceptor and the wafers to reduce substantially the heat loss therefrom and thereby to reduce substantially the thermal gradient from front to back surfaces of the wafers.
-
Citations
22 Claims
-
1. In a chemical vapor deposition system, in combination:
a generally closed reaction chamber having walls formed from a dielectric material; - View Dependent Claims (3, 5, 6, 7, 8, 9, 10, 11, 13, 15, 16, 17, 18, 19, 20, 21, 22)
-
2. a susceptor for carrying a plurality of semiconductor wafers, said susceptor being adapted to be positioned within said chamber and being formed from an electrically conductive material adapted to be heated by induction;
-
an induction coil positioned in the vicinity of said susceptor for carrying an alternating electric current to produce induction heating of said susceptor and thereby heating said wafers thereon; means supplying said induction coil with alternating electric current at a prearranged frequency to induce heating currents throughout a region of said susceptor having a skin depth directly related to said prearranged frequency; said susceptor being formed to have a general thickness less than or equal to said skin depth, and having regions of substantially reduced thickness at prearranged locations relative to wafer positions on said susceptor to produce greater induced heating at said prearranged locations and thereby to alter the temperature of said susceptor at said regions. - View Dependent Claims (4)
-
-
12. In a chemical vapor deposition system, in combination:
-
a generally cylindrical reaction chamber having walls formed from a dielectric material and being disposed with its central axis in a vertical orientation; a susceptor formed from an electrically conductive material adapted to be heated by induction, said susceptor comprising a hollow body having a generally truncated pyramidal configuration and adapted to be positioned within said reaction chamber with its central axis disposed in a vertical orientation, said body having an arrangement of substantially straight side wall segments meeting at corner regions and including an array of wafer carrying recesses formed on front surface regions thereof in multiple rows such that said wafers face the cylindrical side walls of said reaction chamber; a heating system for heating said susceptor by induction and comprising a coil having a generally cylindrical configuration disposed over said second chamber and having a height greater than the height of said susceptor, and power supply means for supplying an alternating current to said coil for induction heating of said susceptor; gas delivery means for delivering reactant gases to said reaction chamber in a region above said susceptor and for withdrawing reactant gases from said reaction chamber below said susceptor; and boundary control means carried on said susceptor at prearranged locations relative to said wafer carrying recesses to locally alter the boundary conditions between said reactant gases and the surfaces of said susceptor and wafers carried thereon and thereby to provide more uniform deposition of material on said wafers. - View Dependent Claims (14)
-
Specification