Process for forming slots of different types in self-aligned relationship using a latent image mask

• US 4,579,812 A
• Filed: 02/03/1984
• Issued: 04/01/1986
• Est. Priority Date: 02/03/1984
• Status: Expired due to Term

• Current Assignee: RPX Corporation
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Bower, Robert W.
• Primary Examiner(s): Kittle, John E.
• Assistant Examiner(s): Dees, Jose G.
• Application Number:
  US06/576,658
• Time in Patent Office: 788 Days
• Field of Search: 430/312, 430/313, 430/314, 430/316, 430/394, 430/323, 430/317, 156/650, 156/659.1, 156/662, 156/648
• US Class Current: 430/313
• CPC Class Codes: H01L 21/308 using masks H01L21/3063, H01L21/3065 take precedence
• CPC Class Codes: H01L 21/76229 Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
• CPC Class Codes: H01L 21/763 Polycrystalline semiconductor regions H01L21/76264 takes precedence

Abstract

Slots of different types are fabricated using a single latent image mask. The slots of different types are thus located with respect to each other in a self-aligned relationship. In one embodiment an oxide of the semiconductor material, e.g., silicon dioxide, is used as a unitary masking layer. The slots of various types are defined in the mask and are fabricated in succession by relying on a universal etch and differential thicknesses for the oxide layers over slots of the different types. When the slots are formed they are filled with a suitable material. In another embodiment at least a dual layer latent image mask is used in which the two materials have different etch properties. One layer is used as a stop etch layer during fabrication of one of the slot types.

Claims

1. A process for fabricating slots of different types in self-aligned relationship, comprising the steps of:

applying to a semiconductor substrate a layer of a masking material in which latent images of slots of different types are to be formed;

patterning said layer of masking material to define within said layer images for slots of at least a first type and a second type;

etching said layer of masking material to expose the substrate where slots of said first type are to be formed;

etching said exposed regions of said substrate to form slots of said first type;

etching said latent image mask layer to expose the substrate where slots of said second type are to be formed; and

etching said exposed regions of said substrate to form slots of said second type whereby said slots of said first type and of said second type are arrayed in self-aligned relationship.

2. A process for fabricating slots of different types in accordance with claim 1 wherein after said step of etching said exposed regions of said substrate to form slots of said first type, the following step is performed:

filling said slots of said first type with a filler material.

3. A process for fabricating slots of different types in accordance with claim 2 wherein after said step of filling said slots of said first type the following steps are performed:

removing excess filler material; and

applying a protective layer over said filled slots of said first type.

4. A process for fabricating slots of different types in accordance with claim 1 wherein said step of etching said layer of masking material to expose the substrate where slots of said first type are to be formed is accomplished by the following steps:

determining an etch rate in said layer of masking material for the etchant being used;

measuring the thickness of said layer of masking material where it overlies regions where slots of said first type are to be formed; and

etching for the time required to etch through said layer of masking material where it overlies regions where slots of said first type are to be formed.

5. A process for fabricating slots in accordance with claim 4 wherein before said step of etching said exposed region of said substrate to form slots of said second type, the following step is accomplished:

etching for the time required to etch through said layer of masking material where it overlies regions where slots of said second type are to be formed.

6. A process for forming slots of different types in accordance with any one of claims 1-5 wherein said layer of a masking material comprises a layer of silicon dioxide.

7. A process for forming slots of different types in accordance with claim 1 wherein said step of applying said layer of masking material in which latent images of slots of different types are to be formed, the following step is performed:

applying a second layer of a second masking material over a first layer of a first masking material, said second layer having an etch property that is different from the etch property of said first layer.

8. A process for forming slots of different types in accordance with claim 7 wherein said second layer of masking material overlies only regions where slots of said second type are to be formed and not over regions where slots of said first type are to be formed.

9. A process for fabricating slots of different types in accordance with claim 8 wherein said layer of a masking material is a layer of silicon nitride and said second layer of masking material is a layer of silicon dioxide.

10. A process for fabricating slots of different types in accordance with claim 8 wherein said layer of a masking material is a layer of silicon dioxide and said second layer of a masking material is a layer of silicon nitride.

11. A process for fabricating slots of different types in accordance with claim 7 wherein after said step of etching said exposed regions of said substrate to form slots of said first type, the following step is performed:

filling said slots of said first type with a filler material.

12. A process for fabricating slots of different types in accordance with claim 8 wherein said step of etching said layer of masking material to expose regions of said substrate where slots of said first type are to be formed is accomplished by a step of etching said layer of masking material by an etch which selectively etches said layer of masking material preferentially over said second layer of masking material.

13. A process for fabricating slots of different types in accordance with claim 12 wherein said step of etching said layer of masking material to expose regions of said substrate where slots of said second type are to be formed is accomplished by a step of etching with an etch which selectively etches said second layer of masking material preferentially over said layer of masking material.

14. A process for forming slots of different types in accordance with claim 1 wherein before said step of applying said layer of masking material in which latent images of slots of different types are to be formed, the following step is performed:

applying a layer of another masking material, said another layer having an etch property that is different from the etch property of said first layer.

15. A process for fabricating slots of different types in self-aligned relationship at a surface of a semiconductor material substrate, said process comprising the steps of:

(a) applying a layer of a first masking material over said substrate surface;

(b) exposing a portion of said substrate surface;

(c) covering said layer of a first masking material and the otherwise exposed portion of said substrate surface with a cover layer of a second masking material;

(d) etching through said cover layer of said second masking material over said otherwise exposed portion of said substrate surface to provide a latent image mask for a slot of said first type and over said layer so as to provide a latent image mask for a slot of said second type;

(e) etching selectively the material exposed by said latent image mask for said first type of said slots so as to form said first type of slot;

(f) filling said first type of slot with a filler material;

(g) removing excess filler material;

(h) applying a protective layer over said filled slots of said first type;

(i) etching through any remaining thickness of said layer of a first masking material; and

(j) etching into any underlying material to form said second type of slot.

16. The process of claim 15 wherein said first masking material is further characterized as comprising silicon dioxide.

17. The process of claim 16 wherein said cover layer of said second masking material is further characterized as comprising silicon dioxide.

18. The process of claim 15 further comprising the step of applying an intermediate layer of a third masking material over at least a first portion of the surface of said substrate prior to the step of applying said layer of said first masking material.

19. The process of claim 18 wherein the step of etching selectively the material exposed by the latent image mask for said second type of said slots so as to form said second type of slot comprises the steps of:

(a) etching through any remaining thickness of said layer; and

(b) etching into any underlying material to form said second type of slot.

20. The process of claim 19 wherein said intermediate layer is further characterized as being provided adjacent said layer.

21. The process of claim 20 wherein said first material is characterized as being silicon dioxide and said third material as being silicon nitride.

22. A process of forming slots at the surface of semiconductor layer in the fabrication of an integrated circuit comprising the steps of:

(a) providing a first mask layer overlying a first portion of said semiconductor layer and leaving exposed a second portion of said semiconductor layer;

(b) providing a second mask layer overlying said first mask layer and said second portion of said semiconductor layer;

(c) etching away a first portion of said second mask layer so as to expose a corresponding portion of said second portion of said semiconductor layer and a second portion of said second mask layer so as to expose a corresponding portion of said first mask layer;

(d) etching away that portion of said semiconductor layer exposed by the removal of said first portion of said second mask layer so as to open a first slot;

(e) filling said first slot with a first filler material;

(f) etching away that portion of said first mask layer exposed by the removal of said second portion of said second mask layer and the subsequently exposed corresponding portion of said semiconductor layer so as to open a second slot; and

(g) filling said second slot with a second filler material.

23. The process of claim 22 wherein said first and second mask layers are further characterized as being of the same material and said second mask layer as being of generally uniform thickness.

24. The process of claim 22 wherein said first and second mask layers are further characterized as being of different materials distinguished as having differing etching characteristics so that said first mask layer acts as a stop etch layer in the etch removal of the first portion of said second mask layer.