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Semiconductor device of non-single crystal structure

  • US 4,581,620 A
  • Filed: 06/29/1981
  • Issued: 04/08/1986
  • Est. Priority Date: 06/30/1980
  • Status: Expired
First Claim
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1. A semiconductor device comprising:

  • a substrate anda non-single crystal semiconductor layer formed on or over the substrate, the non-single crystal semiconductor layer being composed of a first semiconductor region formed primarily of a first semi-amorphous semiconductor and a second semiconductor region (a) formed primarily of a second semi-amorphous semiconductor containing microcrystalline semiconductor more than the first semi-amorphous semiconductor and (b) having a higher degree of conductivity than the first semiconductor region;

    wherein the first and second semiconductor regions are laterally arranged side by side on or over the substrate.

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