Semiconductor device of non-single crystal structure
First Claim
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1. A semiconductor device comprising:
- a substrate anda non-single crystal semiconductor layer formed on or over the substrate, the non-single crystal semiconductor layer being composed of a first semiconductor region formed primarily of a first semi-amorphous semiconductor and a second semiconductor region (a) formed primarily of a second semi-amorphous semiconductor containing microcrystalline semiconductor more than the first semi-amorphous semiconductor and (b) having a higher degree of conductivity than the first semiconductor region;
wherein the first and second semiconductor regions are laterally arranged side by side on or over the substrate.
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Abstract
A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal semiconductor and a second semi-conductor region formed primarily of semi-amorphous semiconductor. The second semi-conductor region has a higher degree of conductivity than the first semiconductor region so that a semi-conductor element may be formed.
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Citations
13 Claims
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1. A semiconductor device comprising:
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a substrate and a non-single crystal semiconductor layer formed on or over the substrate, the non-single crystal semiconductor layer being composed of a first semiconductor region formed primarily of a first semi-amorphous semiconductor and a second semiconductor region (a) formed primarily of a second semi-amorphous semiconductor containing microcrystalline semiconductor more than the first semi-amorphous semiconductor and (b) having a higher degree of conductivity than the first semiconductor region; wherein the first and second semiconductor regions are laterally arranged side by side on or over the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a plurality of photoelectric conversion elements formed on a substrate side by side; wherein the photoelectric conversion elements each has a first conductive layer as a first electrode formed on the substrate, a non-single-crystal semiconductor layer formed on the first conductive layer, formed of Si, Ge, Si3N4-x (0<
x<
4), SiO2x (0<
x<
2) or Six Ge1-x (0<
x<
1), or a material consisting principally thereof and doped with hydrogen or halogen as a dangling bond neutralizer, and a second conductive layer as a second electrode formed on the non-single-crystal semiconductor layer;wherein the second conductive layer of one of the photoelectric conversion elements is coupled with the first conductive layer of the next photoelectric conversion element; wherein the non-single-crystal semiconductor layers of the photoelectric conversion elements each has a first semiconductor region and a second semiconductor region having a higher degree of conductivity than the first semiconductor region; wherein the first and second semiconductor regions are laterally arranged side by side on the first conductive layer; and wherein the first semiconductor region is formed primarily of a first semiamorphous semiconductor, and wherein the second semiconductor region is formed primarily of a second semiamamorphous semiconductor containing more microcrystalline semiconductor than the first semiamorphous semiconductor. - View Dependent Claims (11, 12)
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13. A semiconductor device comprising:
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a plurality of MIS type transistors formed side by side on a substrate; wherein the MIS type transistors each has a non-single-crystal semiconductor layer formed on the substrate an insulating layer formed on the non-single-crystal semiconductor layer and a conductive layer formed on the insulating layer; wherein the non-single crystal semiconductor layer is formed of Si, Ge, Si3 N4-x (0<
x<
4), SiO2-x (0<
x<
2), SiCx (0<
x<
1) or Six Ge1-x (0<
x<
1), or a material consisting principally thereof and doped with hydrogen or halogen as a dangling bond neutralizer;wherein the non-single-crystal semiconductor has a first semiconductor region as a channel region a second and third semiconductor regions as a source and drain regions respectively connected with the opposing sides of the first semiconductor regions, respectively and having a P or N conductivity type and having a higher degree of conductivity than the first region; wherein the third, first and second regions are laterally arranged side by side in this order on the substrate; wherein the insulating layer is disposed on at least the first semiconductor region as a gate insulating layer; wherein the conductive layer is disposed on at least the first semiconductor region through the insulating layer as a gate electrode; and wherein the first semiconductor region is formed primarily of a first semi-amorphous semiconductor, and wherein the second and third semiconductor regions are formed primarily of a second semi-amorphous semiconductor containing more microcrystalline semiconductor than the first semi-amorphous semiconductor.
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Specification