Vertically integrated solid state color imager

• US 4,581,625 A
• Filed: 12/19/1983
• Issued: 04/08/1986
• Est. Priority Date: 12/19/1983
• Status: Expired due to Fees

• Current Assignee: Siemens Solar Industries L.P. (Siemens AG)
• Original Assignee: Atlantic Richfield Company Incorporated (BP PLC)
• Inventors: Wieting, Robert D., Gay, Charles F.
• Primary Examiner(s): Davie, James W.
• Assistant Examiner(s): Economou, Vangelis
• Application Number:
  US06/562,952
• Time in Patent Office: 841 Days
• Field of Search: 357/2, 357/30, 357/15, 357/31, 357/45, 357/58, 358/44
• US Class Current: 257/444
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14645 Colour imagers

Abstract

A solid state color imaging device comprising a two dimensional array of stacked thin film photovoltaic devices with devices in each stack responsive to selected color bands. Color discrimination may be enhanced by design of intermediate transparent conductive layers to act as optical filters.

Claims

1. A solid state color imaging device comprising:

a first plurality of spaced apart linear conductors supported on an insulating substrate,

a first photovoltaic semiconductor layer deposited on said substrate and first conductors, said first semiconductor layer comprising a p-i-n amorphous silicon structure having i-layer thickness and/or bandgap selected to cause said layer to primarily absorb and provide electrical response to a first color band,

a second plurality of spaced apart conductors deposited on said first semiconductor layer, said second conductors being transparent and aligned orthogonal to said first conductors,

a second photovoltaic semiconductor layer deposited on said first layer and said second conductors, said second semiconductor layer comprising a p-i-n amorphous silicon structure having i-layer thickness and/or bandgap selected to cause said layer to primarily provide electrical response to a second color band, and

a third plurality of spaced apart linear conductors deposited on said second semiconductor layer, said third conductors positioned above and in alignment with said first conductors.

2. A color imaging device according to claim 1 wherein said substrate and said first conductors are transparent and said third conductors are reflective of light in at least said second color band.

3. A color imaging device according to claim 1 wherein said substrate and said first conductors are transparent and said second conductors have a thickness and index of refraction selected to reflect said first color band and pass said second color band.