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Gallium arsenide phosphide top solar cell

  • US 4,582,952 A
  • Filed: 04/30/1984
  • Issued: 04/15/1986
  • Est. Priority Date: 04/30/1984
  • Status: Expired due to Fees
First Claim
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1. In a tandem solar cell having a silicon solar cell for a low energy gap bottom cell and a high energy gap top cell, the improvement being a gallium arsenide phosphide top solar cell comprising:

  • a. a transparent gallium phosphide substrate;

    b. a first active semiconductor layer of GaAs1-y Py and of a first conductivity type overlying said substrate;

    c. a second active semiconductor layer of GaAs1-x Px and of a second conductivity type opposite said first conductivity type overlying and forming a photovoltaic junction therewith;

    d. a transparent first electrical contact in ohmic contact with said substrate; and

    e. a transparent second electrical contact in ohmic contact with said second active semiconductor layer.

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