Method for automatically identifying semiconductor wafers

• US 4,585,931 A
• Filed: 11/21/1983
• Issued: 04/29/1986
• Est. Priority Date: 11/21/1983
• Status: Expired due to Term

• Current Assignee: AT&T Technologies Inc (Nokia Corporation)
• Original Assignee: AT&T Technologies Inc (Nokia Corporation)
• Inventors: Kinney, Karen H., Kahn, Sherwin R., Ehret, Francis J., Duncan, Hibbert A., Parry, Peter D.
• Primary Examiner(s): TRAFTON, DAVID
• Application Number:
  US06/553,655
• Time in Patent Office: 890 Days
• Field of Search: 235/462, 235/463, 235/464, 369/97, 369/109
• US Class Current: 235/462.14
• CPC Class Codes: B07C 5/3412 according to a code applied to the object which indicates a property of the object, e.g. quality class, contents or incorrect indication sorting according to size measured by light-responsive means B07C5/10; sorting according to optical properties B07C5/342; for packages B65D79/02; for information carriers G06K7/00
• CPC Class Codes: G06K 7/10871 randomly oriented data-fields, code-marks therefore, e.g. concentric circles-code
• CPC Class Codes: H01L 2223/54413 comprising digital information, e.g. bar codes, data matrix
• CPC Class Codes: H01L 2223/54493 Peripheral marks on wafers, e.g. orientation flats, notches, lot number
• CPC Class Codes: H01L 23/544 Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps test patterns for characterising or monitoring manufacturing processes H01L22/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10S 235/901 Bar code reader specialized to read code on a highly reflective surface

Abstract

A technique for automatically identifying a semiconductor wafer (30) having bar code identification indicia (32) on the front surface (31) thereof. Reading of the code is achieved by rotating the wafer about an axis (34) perpendicular to its front surface (31); directing a beam of radiant energy (37) at the code (32) along a predetermined direction relative to the front surface (31); and sensing, while rotating the wafer, the reflected radiant energy (39) within a second predetermined angular direction relative to the front surface. The bar code used herein is preferably a modified or "stretched" bar code 39 formed on the front surface of the wafer, and having an aspect ratio (i.e., dimension of a space/dimension of a bar) ranging from 1 to 4 (FIG. 2).

Claims

1. A method for automatically identifying a semiconductor wafer comprising the steps of:

providing coded indicia including bars and spaces of a selected length in a predetermined portion of a surface of a semiconductor wafer;

imparting a relative rotational motion between the semiconductor wafer and a radiant energy sensing means through at least a predetermined arc about an axis perpendicular to the surface of the wafer while imparting a relative linear motion therebetween in a radial direction along the surface of the wafer;

directing a beam of radiant energy at said predetermined portion of the surface of the wafer along a first predetermined angular direction relative thereto so that the beam of radiant energy is reflected from the space portions of the coded indicia into the radiant energy sensing means along a second angular direction relative to the surface of the wafer;

sensing, at the radiant energy sensing means, the radiant energy reflected by the space portions of the coded indicia at successively different positions along the length thereof as the relative linear motion is imparted between the wafer and the radiant energy sensing means while the relative rotational motion is imparted therebetween, to generate signals identifying the wafer.

2. A method according to claim 1, wherein the providing step comprises the step of laser marking the front surface of the wafer with a bar code comprising a combination of wide and narrow bars separated by narrow and wide spaces.

3. A method according to claim 2, wherein the laser marking step comprises forming a bar code with a space-to-bar aspect ratio ranging from 1.5 to 4.0.

4. A method according to claim 3, wherein the laser marking step comprises forming a narrow bar smaller than a narrow space, and forming a wide bar smaller than a wide space.

5. A method according to claim 4, wherein the narrow space-to-narrow bar aspect ratio is of the order of 2.0, and wherein the wide space-to-wide bar aspect ratio is of the order of 1.5.

6. A method according to claim 1, wherein the imparting of a relative linear motion between the radiant energy sensing means and the wafer is accomplished by continuously moving the radiant energy sensing means radially along the surface of the wafer.

7. A method according to claim 6, comprising continuously moving the radiant energy sensing means along two opposite radial directions of the wafer between the boundaries of said coded indicia.

8. A method according to claim 1, wherein the rotating step comprises the step of continuously rotating the semiconductor wafer.

9. A method according to claim 1, wherein the rotating step comprises the step of alternately rotating the semiconductor wafer in two opposite rotational directions thereby scanning the coded indicia with the beam in two opposite directions.

10. A method for automatically identifying a semiconductor wafer having coded indicia on a surface thereof, the method comprising the steps of:

laser marking bar code indicia in a predetermined portion of the front surface of the wafer, said bar code including wide spaces and wide bars and narrow spaces and narrow bars of a predetermined length and width with the ratio of the width of the narrow spaces to the narrow bars ranging from 2.0 to 4.0 and the ratio of the width of the wide spaces to the wide bars ranging from 1.5 to 4.0;

continuously rotating the semiconductor wafer about an axis perpendicular to its front surface;

moving an optical means in a radial direction along the front surface of the wafer;

directing an optical beam, along a first predetermined angular direction relative to the rotating front surface of the wafer toward the bar code indicia thereon; and

sensing, at the optical means during the movement thereof in a radial direction along the front surface of the wafer as it rotates, the optical energy reflected by the spaces of the bar code indicia at successively different positions along the length thereof, within a second predetermined angular direction, thereby generating signals identifying the wafer.

11. A method according to claim 10, wherein the step of moving said optical means comprises the step of:

continuously displacing the optical means successively along two opposite radial directions on the surface of the wafer between the boundaries of the bar code indicia.

12. A bar code identification for semiconductor wafers comprising a plurality of wide bars, wide spaces, narrow bars and narrow spaces wherein the ratio of the width of the narrow spaces to the narrow bars ranges from 2.0 to 4.0 and wherein the ratio of the width of the wide spaces to the wide bars ranges from 1.5 to 4.0 .

13. A bar code according to claim 12, wherein the ratio of the width of the narrow spaces to the narrow bars is on the order of 2.0.

14. A bar code according to claim 12, wherein the ratio of the width of the wide spaces to the wide bars is on the order of 1.5.

15. A bar code according to claim 12, wherein the width of a narrow bar is of the order of 2 mils.

16. A bar code according to claim 12, wherein the width of a narrow space is of the order of 4 mils.

17. A bar code according to claim 12, wherein the width of a wide bar is of the order of 7 mils.

18. A bar code according to claim 12, wherein the width of a wide space is of the order of 10 mils.

19. A bar code according to claim 12, wherein the bars are laser marked bars having depths of the order of 10 μ

m.