Batch-process silicon capacitive pressure sensor

• US 4,586,109 A
• Filed: 04/01/1985
• Issued: 04/29/1986
• Est. Priority Date: 04/01/1985
• Status: Expired due to Term

• Current Assignee: Interia Optical Technology Applications, Inc.
• Original Assignee: Bourns Instruments, Inc.
• Inventors: Peters, Arthur J., Marks, Eugene A.
• Primary Examiner(s): Griffin, Donald
• Application Number:
  US06/718,136
• Time in Patent Office: 393 Days
• Field of Search: 361/283, 427/79, 73/718, 73/724, 29/25.41, 29/25.42
• US Class Current: 361/283.4
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm
• CPC Class Codes: Y10T 29/43 Electric condenser making

Abstract

Silicon capacitive pressure sensors are produced by a batch-process method, comprising the steps of: (1) providing first and second wafers of conductive silicon; (2) oxidizing a surface of each wafer with a layer of silicon dioxide; (3) removing a predefined area of the silicon dioxide layer from a first one of the wafers, leaving an exposed surface of unoxidized silicon in the predefined area; (4) superimposing the second wafer onto the first wafer so that the silicon dioxide layer of the second wafer is in contact with the silicon dioxide layer of the first wafer; (5) fusing the two wafers together at their contacting silicon dioxide layers; (6) metallizing selected areas of the outer surfaces of the two wafers to form electrical contacts; and (7) cutting the wafers into individual pressure sensors. Each of the individual sensors so formed has a pair of opposed conductive silicon plates separated by a dielectric gap formed between the predefined unoxidized area of the first wafer and the opposed silicon dioxide layer of the second wafer. At least one of the plates is formed to be deflectable into the gap in response to the application of pressure to its outer surface.

Claims

1. A method for making a capacitive pressure sensor comprising the steps of:

(1) providing first and second wafers of conductively-doped semiconductor material;

(2) oxidizing a major surface of each of said wafers to form a layer of oxidized material thereon;

(3) removing a predefined area of said oxidized layer from said first wafer, leaving an uncovered surface of unoxidized semiconductor material in said predefined area;

(4) superimposing said second wafer onto said first wafer so that the oxidized layer of said second wafer is in contact with the oxidized layer of said first wafer around said predefined area;

(5) applying sufficient heat and pressure to said first and second wafers to fuse together the contacting oxidized layers;

(6) metallizing preselected areas of the outer surfaces of the fused-together first and second wafers to form a metallized layer on each of said outer surfaces; and

(7) cutting the fused-together wafers to form at least one capacitive pressure sensor having first and second conductive semiconductor plates separated by a gap formed between said uncovered surface in said predefined area of said first wafer and the opposed oxidized layer of said second wafer, each of said plates including a portion of one of said metallized layers on its outer surface.

2. The method of claim 1, further comprising the step of:

after fusing said first and second wafers together, and before metallizing said preselected areas of the outer surfaces of said wafers, forming a recess in the outer surface of at least one of said wafers in an area aligned and in registration with said uncovered surface of unoxidized semiconductor material.

3. The method of claim 1, wherein said semiconductor material is essentially comprised of conductively-doped silicon.

4. The method of claim 3, wherein said silicon has been doped to attain a bulk resistively in the range of approximately 0.005 approximately 0.010 ohm-centimeters.

5. The method of claim 3, wherein said step of fusing said first and second wafers comprises the step of subjecting the superimposed wafers to a pressure of at least approximately 1000 pounds per square inch at a temperature of at least approximately 1000°

C.

6. The method of claim 1, wherein said oxidizing step comprises the steps of:

(a) oxidizing a major surface of said first wafer to form a first oxidized layer thereon; and

(b) oxidizing a major surface of said second wafer to form a second oxidized layer thereon having a thickness which is substantially less than the thickness of said first oxidized layer.

7. The method of claim 6, wherein the thickness of said second oxidized layer is approximately one-tenth the thickness of said first oxidized layer.

8. The method of claim 6, wherein the thickness of said first oxidized layer is in the range of approximately 1.0 to approxmately 1.2 microns, and the thickness of said second oxidized layer is in the range of approximately 0.10 to approximately 0.12 microns.

9. The method of claim 1, wherein said predefined area of said first wafer from which said oxide layer is removed comprises a matrix of plural separate predefined areas, each having an uncovered surface of semiconductor material, and wherein said cutting step comprises the step of cutting the fused-together wafers to form a plurality of capacitive pressure sensors each having first and second conductive semiconductor plates separated by a gap formed between the uncovered surface in one of said plural predefined areas of said first wafer and the opposed oxidized layer of said second wafer.

10. A method for making a capacitive pressure sensor comprising the steps of:

(1) providing first and second wafers of conductively-doped silicon;

(2) oxidizing a major surface of each of said wafers to form a layer of silicon dioxide therein;

(3) removing silicon dioxide from a matrix of plural separate predefined areas on the oxidized major surface of said first wafer, leaving an uncovered surface of silicon in each of said predefined areas;

(4) superimposing said second wafer onto said first wafer so that the silicon dioxide layer of said second wafer is in contact with the silicon dioxide layer of said first wafer around and between said predefined areas;

(5) fusing together the contacting silicon dioxide layers by the application of heat and pressure to said first and second wafers;

(6) metallizing pre-selected areas of the outer surface of the fused-together first and second wafers to form a metallized layer on each of said outer surfaces; and

(7) cutting the fused-together wafers to form a plurality of capacitive pressure sensors each having first and second conductive silicon plates separated by a gap formed between the uncovered silicon surface in one of said plural predefined areas and the opposed silicon dioxide layer of said second wafer, each of said plates including a portion of one of said metallized layers on its outer surface.

11. The method of claim 10, further comprising the step of:

after fusing said first and second wafers together, and before metallizing said pre-selected areas of the outer surfaces of said wafers, forming a matrix of recesses in the outer surface of at least one of said wafers, each of said recesses being aligned and in registration with the uncovered surface of silicon in one of said predefined areas on said first wafer.

12. The method of claim 10, wherein the silicon dioxide layer on said first wafer is substantially thicker than the silicon dioxide layer on said second wafer.

13. The method of claim 12, wherein the silicon dioxide layer on said first wafer is approximately ten times as thick as the silicon dioxide layer on said second wafer.

14. The method of claim 12, wherein the silicon dioxide layer on said first wafer has a thickness of approximately 1.0 to 1.2 microns, and the silicon dioxide layer on said second wafer has a thickness of approximately 0.10 to 0.12 microns.

15. The method of claim 10, wherein said fusing step is conducted at a temperature of at least approximately 1000°

C. and a pressure of at least approximately 1000 pounds per square inch.

16. A silicon capacitive pressure sensor manufactured by a method comprising the steps of:

(1) providing first and second wafers of conductively-doped silicon;

(2) forming a first layer of silicon dioxide on a major surface of said first wafer and a second layer of silicon dioxide on a major surface of said second wafer;

(3) forming a matrix of plural, separate uncovered silicon areas on said first wafer by removing a matrix of predefined areas of said first silicon dioxide layer;

(4) bringing said first and second silicon dioxide layers into mutual contact under sufficient heat and pressure to effect a fusing together of said first and second wafers at the contacting portions of said first and second silicon dioxide layers;

(5) forming a metallized layer on an outer surface of each of the fused-together wafers; and

(6) cutting the fused-together wafers into a plurality of capacitive pressure sensors each having first and second conductive silicon plates separated by a gap formed between the uncovered silicon in one of said plural predefined areas in said first wafer and the opposed silicon dioxide layer on said second wafer, each of said plates including a portion of one of said metallized layers on its outer surface.

17. The pressure sensor of claim 16, wherein at least one of said plates includes a diaphragm which is deflectable into said gap in response to a pressure applied thereto.

18. The pressure sensor of claim 17, wherein said diaphragm is formed by a recess in the outer surface of one of said plates, said recess being aligned and in registration with said gap.

19. The pressure sensor of claim 16, wherein said gap separates said first and second conductive silicon plates by a distance of approximately one micron or less.

20. The pressure sensor of claim 19, wherein said first silicon dioxide layer has a thickness of approximately 1.0 to 1.2 microns, and said second silicon dioxide layer has a thickness of approximately 0.10 to 0.12 microns.

21. The pressure sensor of claim 16, wherein said first silicon dioxide layer is substantially thicker than said second silicon dioxide layer.

22. The pressure sensor of claim 21, wherein said first silicon dioxide layer is approximately ten times as thick as said second silicon dioxide layer.

23. The pressure sensor of claim 16, wherein said first and second wafers are fused together by pressing them together at a pressure of at least approximately 1000 pounds per square inch at a temperature of at least approximately 1000°

C.

24. A silicon capacitive pressure sensor, comprising:

first and second plates of conductively-doped silicon separated by a dielectric gap and joined to each other around said gap by fused-together layers of silicon dioxide; and

a metallized electrical contact on an outer surface of each of said plates;

whereby at least one of said plates is deflectable into said gap by the application of pressure to an outer surface thereof.

25. The pressure sensor of claim 24, wherein said dielectric gap is formed between a silicon dioxide-covered surface on one of said plates and an uncoverd silicon surface on the other of said plates.

26. The pressure sensor of claim 24, wherein each of said plates which is deflectable includes a pressure-responsive diaphragm formed by a recess in its outer surface, said recess being aligned and in registration with said dielectric gap.

27. The pressure sensor of claim 24, wherein said gap separates said first and second plates by a distance of approximately one micron or less.

28. The pressure sensor of claim 24, wherein said layers of silicon dioxide comprise essentially pure silicon dioxide.