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Ion implantation source and device

  • US 4,587,430 A
  • Filed: 02/10/1983
  • Issued: 05/06/1986
  • Est. Priority Date: 02/10/1983
  • Status: Expired due to Fees
First Claim
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1. Ion source apparatus for providing ions to be used for implantation of said ions in a surface, said apparatus being adapted to be contained in an evacuable structure, said apparatus comprising:

  • a spark gap comprising a pair of electrodes;

    means for energizing said electrodes to produce a plasma in a region around said gap from one of said electrodes;

    extraction means for extracting ions form said plasma whereby said extracted ions are available for use for ion implantation;

    magnetic means disposed and arranged to confine and magnetically insulate said plasma, and direct it toward said extraction means;

    pulsing means causing said first name means to energize said electrodes in time-spaced pulses; and

    pulsing means means to apply to said plasma an extraction potential relative to said extraction means in time-spaced pulses.

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