Temperature compensated semiconductor integrated circuit

• US 4,588,940 A
• Filed: 12/23/1983
• Issued: 05/13/1986
• Est. Priority Date: 12/23/1983
• Status: Expired due to Term

• Current Assignee: Bell Telephone Laboratories, Inc. (Nokia Corporation)
• Original Assignee: AT&T, Inc.
• Inventors: Perry, Elizabeth E., Embree, Milton L.
• Primary Examiner(s): Wong, Peter S.
• Assistant Examiner(s): Sterrett, Jeffrey
• Application Number:
  US06/564,703
• Time in Patent Office: 872 Days
• Field of Search: 307/310, 323/312, 323/313, 323/314, 323/907
• US Class Current: 323/313
• CPC Class Codes: G05F 3/225 producing a current or voltage as a predetermined function of the temperature
• CPC Class Codes: Y10S 323/907 Temperature compensation of semiconductor

Abstract

The present invention relates to a circuit capable of providing a negative temperature coefficient greater than that provided by discrete silicon integrated circuit components. A constant current source and a resistor divider network are added to a bipolar junction transistor, where the resistors and the constant current source function to increase the negative temperature coefficient of a bipolar junction transistor. The negative temperature compensation circuit formed in accordance with the present invention provides a sufficient negative temperature coefficient to offset the large positive temperature coefficient associated with high voltage avalanche breakdown diodes without requiring a high voltage integrated circuit.

Claims

1. A temperature compensation circuit for increasing the inherent negative temperature coefficient associated with a bipolar junction transistor (30), said compensation circuit comprising

a first resistor (38) connected to the base of said bipolar junction transistor;

a second resistor (34) connected between said first resistor and the emitter of said bipolar junction transistor;

a third resistor (36) connected between said second resistor and a predetermined reference potential; and

a current source (41) connected to the base of said bipolar junction transistor for providing a voltage across said first resistor which increases the normalized negative temperature coefficient of the voltage at the junction of said second and third resistors to a value above that of the base to emitter voltage of said bipolar junction transistor.

2. A temperature compensation circuit formed in accordance with claim 1 wherein the constant current source (41) comprises

an emitter-follower transistor (46) having its collector connected to a negative potential;

a resistor (64) connected between the emitter of said emitter follower transistor (46) and the base of the bipolar junction transistor (30);

a Zener diode (44) connected between the base of said emitter follower transistor (46) and the input terminal; and

a second current source for biasing the Zener diode connected to the base of said emitter follower transistor.

3. A temperature compensation circuit formed in accordance with claim 2 wherein the second current source which biases the Zener diode (44) comprises a first transistor (48) having both its collector and base terminals connected to the collector of the emitter follower transistor (46);

a fourth resistor (49) connected between the emitter of said first transistor (48) and said predetermined reference potential;

a second transistor (50) having its base connected to the base of the first transistor (48) and its collector connected to the base of the emitter follower transistor;

a fifth resistor (51) connected between the emitter of the second transistor (50) and said predetermined reference potential;

a third current source for starting the second current source coupled between the base of the emitter follower transistor (46) and said predetermined reference potential.

4. A temperature compensation circuit formed in accordance with claim 3 wherein the third current source which starts the second current source comprises a third transistor (40) having both its base and collector terminals connected to the third resistor (36) and its emitter connected to said predetermined reference potential;

a fourth transistor (42) having its base connected to said base of said third transistor (40) and its collector connected to the base of the emitter follower transistor (46).

5. A temperature compensation circuit comprising

a first device (20) having a positive temperture coefficient, yielding a positive voltage variation with temperature;

a bipolar junction transistor (30) coupled to the output of said first device, said bipolar junction transistor having a negative temperature coefficient, yielding a negative voltage variation with temperature of lesser magnitude than said positive voltage variation of said first device; and

enhanced negative temperature compensation means (34,36,38,41) coupled to both said bipolar junction transistor and said first device for increasing the inherent negative temperature coefficient of said bipolar junction transistor and providing an overall zero temperature coefficient in said temperature compensation circuit, wherein said enhanced negative temperature compensation means comprises

a first resistor (38) connected to the base of the bipolar junction transistor;

a second resistor (34) connected between said first resistor and the emitter of said bipolar junction transistor;

a third resistor (36) connected between said second resistor and a predetermined reference potential; and

a constant current source (41) coupled between the base of said bipolar junction transistor and said predetermined reference potential for providing a constant voltage across said first resistor which increases the normalized negative temperature coefficient of the voltage at the junction of said second and third resistors to a value above that of the base to emitter voltage of said bipolar junction transistor.

6. A temperature compensation circuit formed in accordance with claim 5 wherein the first device comprises a high voltage avalanche diode.

7. A temperature compensation circuit for providing an enhanced negative temperature coefficient, said circuit comprising

an input terminal (A) for receiving an input current;

a first transistor (30) having its emitter connected to said input terminal wherein the base-to-emitter voltage of said first transistor decreases at a first predetermined normalized rate as the temperature of said temperature compensation circuit increases;

an output terminal (B);

a voltage divider network (34 and

     36), including an internal divider node, connected between said input terminal and said output terminal; and

means for controlling the voltage at said internal divider node of said voltage divider network such that said voltage is held constant for an increasing input current, wherein the controlling of said internal divider node voltage results in decreasing its voltage with respect to the input terminal at a second normalized rate greater than said first predetermined normalized rate as the temperature of said temperature compensation circuit increases.

8. A temperature compensation circuit formed in accordance with claim 7 wherein the voltage controlling means with respect to temperature includes

a resistor coupled between the base of the first transistor and the internal divider node of the voltage divider network;

and

a current source (41) coupled between said base of said first transistor and the output terminal for controlling the voltage appearing across said resistor and providing a negative temperature coefficient voltage regulation between said input voltage and a voltage appearing at said output terminal.

9. A temperature compensation circuit formed in accordance with claim 7 wherein the voltage controlling means with respect to current includes

a coupling means (38) between the base of the first transistor and the internal divider node of the voltage divider network;

and

a current source (31) connected between said output terminal and the collector of said first transistor;

a PNPN circuit (32) comprising a first and a second PNPN emitter and a base, said PNPN base connected to the collector of said first transistor, said first emitter connected to said input terminal and said second emitter connected to said output terminal.

10. A temperature compensation circuit formed in accordance with claim 9 wherein the PNPN circuit comprises

a second transistor having its base input connected to the collector of the first transistor of the compensation circuit as the base of the PNPN circuit;

a third transistor having its base coupled to the emitter of the first transistor, its emitter coupled to the output terminal, and its collector coupled to the collector of said first transistor;

a fourth transistor having its base coupled to the collector of said second transistor and its emitter coupled to the input terminal; and

a resistor coupled between the emitter of said third transistor and the collector of said second transistor.

11. A temperature compensation circuit formed in accordance with claim 10 wherein the current source (31) of said temperature compensation circuit comprises

a fifth transistor having its associated collector coupled to the base of the first transistor of the PNPN circuit;

a sixth transistor having its associated collector coupled to the base of the second transistor of said PNPN circuit;

a first resistor coupled between the emitter of said first transistor and the output terminal; and

a second resistor coupled between the emitter of said second transistor and said output terminal.