Apparatus for selectively measuring ions in a liquid

• US 4,589,970 A
• Filed: 08/16/1984
• Issued: 05/20/1986
• Est. Priority Date: 08/24/1983
• Status: Expired due to Term

• Current Assignee: Sentron VOF Oosteinde 8 9301 LJ Roden The Netherlands
• Original Assignee: Cordis Europa NV (Johnson & Johnson)
• Inventors: Ligtenberg, Hendrikus C. G., Veld, Albertus
• Primary Examiner(s): Kaplan, G. L.
• Application Number:
  US06/641,911
• Time in Patent Office: 642 Days
• Field of Search: 204/416, 204/406, 204/412, 357/25, 357/23.13
• US Class Current: 204/406
• CPC Class Codes: G01N 27/4141 specially adapted for gases

Abstract

The apparatus (14) is constructed and arranged to measure ions in a liquid (30) and comprises a measuring circuit (10) including an ISFET (16), a reference electrode (32), an amplifier (22) and a protection system (12)/guard circuit (40) connected to the measuring circuit (10). The protection system 12/guard circuit 40 comprises at least one electrode (46 or 47) connected via a low-impedance contact (or ring 62/46 or ring electrode 42) to the liquid (30) and coupled to the ISFET (16) by a protective element (64; 65, 66; or 68 and/or 50; 51, 52; 54; 56; or 58) having a low-impedance for high voltages and a high resistance to low voltages.

In one preferred embodiment, the ISFET (16) is provided on a chip (90) and has an electrode (46/62) in as closely spaced relationship as possible to the gate region (34) of the ISFET (16).

Claims

1. Apparatus for selectively measuring ions in a liquid, said apparatus comprising a measuring circuit including a chemically sensitive ion sensor in the form of an ion sensitive field effect transistor (ISFET), a reference electrode, and an amplifier, characterized in that said apparatus includes a protection system for said ISFET comprising a low-impedance contact, a protective element, and at least one electrode connectable to the liquid via said low-impedance contact and coupled to said ISFET by said protective element which has a low impedance to high voltages above the operative voltage range of said ISFET and a high resistance to low voltages below the operative voltage range of said ISFET and which is adapted to become operative outside the operative range of said ISFET.

2. The apparatus according to claim 1 characterized in that said protection system comprises a first electrode which, when said apparatus is immersed into the liquid to be investigated, has a low-impedance contact therewith, and a second electrode, spaced closely adjacent to the gate region of said ISFET, said two electrodes being each coupled via a corresponding protective element to a low-impedance contact for said ISFET.

3. The apparatus according to claim 2, characterized in that the first electrode is made of a conductive material and has a surface area sufficiently large to create a low-impedance contact with the liquid to be investigated when said apparatus is immersed into said liquid.

4. The apparatus according to claim 2, characterized in that said first electrode is coupled to said ISFET by a protective element comprising:

a diode and/or a MOSFET which become conductive outside the operative range of the ISFET, or by a capacitor and/or a mechanical switch.

5. The apparatus according to claim 4, characterized in that said capacitor has a capacitance of about 100 nF or higher.

6. The apparatus according to claim 4 characterized in that said capacitor is included in the amplifier.

7. The apparatus according to claim 4, characterized in that said mechanical switch is a relay switch which is activated by a source of electromagnetic interference for the time of the duration of the interference.

8. The apparatus according to claim 4, characterized in that said first electrode is connected to said capacitor and said second electrode is connected to said diode and/or said MOSFET.

9. The apparatus according to claim 2 characterized in that said second electrode takes the form of a metallic ring around the gate region of the ISFET and is coupled to said ISFET via a diode and/or a MOSFET which forms said protective element and which becomes conductive outside the operative range of the ISFET.

10. The apparatus according to claim 9, characterized in that said second electrode is coupled to said ISFET via two diodes connected in anti-series (in reverse polarity to each other).

11. The apparatus according to claim 10, characterized in that the diode or diodes or the MOSFET are provided on the ISFET chip.

12. An IFSET chip characterized by having an exposed protective electrode on the chip closely adjacent to the gate region and by said electrode taking the form of a metallic ring positioned around the gate region of the ISFET.

13. An ISFET chip characterized by having an electrode on the chip closely adjacent to the gate region of the ISFET and by said electrode being coupled to said ISFET via a diode and/or MOSFET, arranged on the chip, which are adapted to become conductive outside the operative range of the ISFET.

14. The ISFET chip according to claim 13 characterized in that said electrode is coupled to said ISFET via two diodes connected in anti-series (in reverse polarity to each other).