Methods of making highly conductive photoelectrochemical electrodes
First Claim
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1. A method for preparation of a photoelectrode comprising the step of photoelectrochemical deposition of a conductive coating material having a band gap from greater than 0 to about 3.0 e.V. on a substrate consisting essentially of a semiconductor selected from the group consisting of n-type, p-type, and intrinsic semiconductors.
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Abstract
A photoelectrode, containing a highly conductive coating material having a band gap greater than 0 to about 3.0 e.V. on a substrate containing a semiconductor material, is utilized in photovoltaic cells, photoelectrosynthesis and photoelectrocatalysis.
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51 Claims
- 1. A method for preparation of a photoelectrode comprising the step of photoelectrochemical deposition of a conductive coating material having a band gap from greater than 0 to about 3.0 e.V. on a substrate consisting essentially of a semiconductor selected from the group consisting of n-type, p-type, and intrinsic semiconductors.
- 15. A method for the preparation of a photoelectrode comprising the step of electroless deposition of a conductive coating material onto a substrate, said substrate consisting essentially of a semiconductor selected from the group consisting of n-type, P-type, and intrinsic semiconductors and said coating material containing a semiconductor.
- 21. A method for the preparation of an electrode, said method comprising the step of photoelectroless deposition of a coating material onto a substrate consisting essentially of a semiconductor selected from the group consiting of n-type, p-type, and intrinsic semiconductors.
- 25. A method for the preparation of a photoelectrode, said method comprising the step of electrochemical deposition of a conductive coating material having a band gap in the range from greater than about 0.5 to about 2.35 e.V. onto a substrate containing a semiconductor material, said photoelectrode further comprising a layer of material having a bandgap greater than about 3.0 e.V. between said substrate and said coating material, and said layer having an average thickness less than about 100 angstroms.
- 41. A method for the preparation of a phototelectrode, said method comprising the step of electrochemical deposition of a coating material contining thallium (III) oxide onto a substrate containing a semiconductor.
- 49. A method for the preparation of a photoelectrode, useful in a semiconductor liquid junction photovoltaic cell, said method comprising the step of photoelectrochemical deposition of a coating material containing an inorganic semiconductor having a resistivity less than about 10-2 ohm-cm onto a substrate comprising a semiconductor.
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